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Title: Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simple behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ;  [1] ; ORCiD logo [1]
  1. Univ. of Tennessee, Knoxville, TN (United States). Electrical Engineering and Computer Science Dept.
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Power Electronics
Additional Journal Information:
Journal Volume: 33; Journal Issue: 5; Journal ID: ISSN 0885-8993
Publisher:
IEEE
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 10-kV silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET); junction temperature; switching performance
OSTI Identifier:
1430604

Ji, Shiqi, Zheng, Sheng, Wang, Fei, and Tolbert, Leon M. Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET. United States: N. p., Web. doi:10.1109/TPEL.2017.2723601.
Ji, Shiqi, Zheng, Sheng, Wang, Fei, & Tolbert, Leon M. Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET. United States. doi:10.1109/TPEL.2017.2723601.
Ji, Shiqi, Zheng, Sheng, Wang, Fei, and Tolbert, Leon M. 2017. "Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET". United States. doi:10.1109/TPEL.2017.2723601. https://www.osti.gov/servlets/purl/1430604.
@article{osti_1430604,
title = {Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET},
author = {Ji, Shiqi and Zheng, Sheng and Wang, Fei and Tolbert, Leon M.},
abstractNote = {The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simple behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.},
doi = {10.1109/TPEL.2017.2723601},
journal = {IEEE Transactions on Power Electronics},
number = 5,
volume = 33,
place = {United States},
year = {2017},
month = {7}
}