Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films

doi:10.1103/PhysRevB.97.125150

This content will become publicly available on March 28, 2019

Title: Role of defects in the carrier-tunable topological-insulator ( ${Bi}_{1 - x} {Sb}_{x}$ ) $_{2} {Te}_{3}$ thin films

Authors:: Scipioni, Kane L. ; Wang, Zhenyu ; Maximenko, Yulia ; Katmis, Ferhat ; Steiner, Charlie ; Madhavan, Vidya

Publication Date:: 2018-03-28

Grant/Contract Number:: SC0014335

Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Name: Physical Review B Journal Volume: 97 Journal Issue: 12; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

OSTI Identifier:: 1430159


                    Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, and Madhavan, Vidya. Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films.  United States: N. p.,  
        Web.  doi:10.1103/PhysRevB.97.125150.

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                    Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, & Madhavan, Vidya. Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films.  United States.  doi:10.1103/PhysRevB.97.125150.

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                    Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, and Madhavan, Vidya. 2018.  
        "Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films".  United States.  
        doi:10.1103/PhysRevB.97.125150.

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@article{osti_1430159,

  title        = {Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films},

  author       = {Scipioni, Kane L. and Wang, Zhenyu and Maximenko, Yulia and Katmis, Ferhat and Steiner, Charlie and Madhavan, Vidya},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.97.125150},

  journal      = {Physical Review B},

  number       = 12,

  volume       = 97,

  place        = {United States},

  year         = {2018},

  month        = {3}

}

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Free Publicly Accessible Full Text
This content will become publicly available on March 28, 2019
Publisher's Version of Record
10.1103/PhysRevB.97.125150
https://doi.org/10.1103/PhysRevB.97.125150

Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010

Hasan, M. Z.; Kane, C. L.
Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067
DOI: 10.1103/RevModPhys.82.3045

Experimental Realization of a Three-Dimensional Topological Insulator, Bi₂Te₃
journal, June 2009

Chen, Y. L.; Analytis, J. G.; Chu, J.-H.
Science, Vol. 325, Issue 5937, p. 178-181
DOI: 10.1126/science.1173034

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

Xia, Y.; Qian, D.; Hsieh, D.
Nature Physics, Vol. 5, Issue 6, p. 398-402
DOI: 10.1038/nphys1274

Topological insulators in Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃ with a single Dirac cone on the surface
journal, May 2009

Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
Nature Physics, Vol. 5, Issue 6, p. 438-442
DOI: 10.1038/nphys1270

Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry
journal, December 2009

Zhang, Tong; Cheng, Peng; Chen, Xi
Physical Review Letters, Vol. 103, Issue 26, Article No. 266803
DOI: 10.1103/PhysRevLett.103.266803

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Title: Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films

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Title: Role of defects in the carrier-tunable topological-insulator ( ${Bi}_{1 - x} {Sb}_{x}$ ) $_{2} {Te}_{3}$ thin films