Role of defects in the carrier-tunable topological-insulator ( ) thin films
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1430159
- Grant/Contract Number:
- SC0014335
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Name: Physical Review B Journal Volume: 97 Journal Issue: 12; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, and Madhavan, Vidya. Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films. United States: N. p., 2018.
Web. doi:10.1103/PhysRevB.97.125150.
Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, & Madhavan, Vidya. Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films. United States. doi:10.1103/PhysRevB.97.125150.
Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, and Madhavan, Vidya. Wed .
"Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films". United States. doi:10.1103/PhysRevB.97.125150.
@article{osti_1430159,
title = {Role of defects in the carrier-tunable topological-insulator ( Bi 1 − x Sb x ) 2 Te 3 thin films},
author = {Scipioni, Kane L. and Wang, Zhenyu and Maximenko, Yulia and Katmis, Ferhat and Steiner, Charlie and Madhavan, Vidya},
abstractNote = {},
doi = {10.1103/PhysRevB.97.125150},
journal = {Physical Review B},
number = 12,
volume = 97,
place = {United States},
year = {2018},
month = {3}
}
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DOI: 10.1103/PhysRevB.97.125150
DOI: 10.1103/PhysRevB.97.125150
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