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Title: Self-amplified photo-induced gap quenching in a correlated electron material

Abstract

Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. Here, we show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe 2, our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains—on a microscopic level—the extremely fast response of this material to ultrafast optical excitation.

Authors:
 [1];  [2];  [2];  [2];  [3];  [2];  [4]; ORCiD logo [3];  [5];  [2];  [2];  [2];  [6];  [3];  [3];  [6];  [6];  [3];  [2];  [6] more »;  [3];  [2] « less
  1. Georg-August-Univ., Gottingen (Germany). Physikalisches Inst.
  2. Univ. of Kaiserslautern, Kaiserslautern (Germany). Dept. of Physics and Research Center OPTIMAS
  3. Univ. of Colorado, Boulder, CO (United States). Joint Inst. for Lab. Astrophysics (JILA); National Inst. of Standards and Technology (NIST), Boulder, CO (United States)
  4. Univ. of Kiel (Germany). Inst. of Experimental and Applied Physics
  5. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics, and Francis Bitter Magnet Lab.
  6. Univ. of Kiel (Germany). Inst. of Experimental and Applied Physics
Publication Date:
Research Org.:
Univ. of Colorado, Boulder, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Gordon and Betty Moore Foundation
OSTI Identifier:
1430130
Grant/Contract Number:  
SC0002002; GBMF4538; DFG-BA 2177/9-1
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Ultrafast lasers

Citation Formats

Mathias, S., Eich, S., Urbancic, J., Michael, S., Carr, A. V., Emmerich, S., Stange, A., Popmintchev, T., Rohwer, T., Wiesenmayer, M., Ruffing, A., Jakobs, S., Hellmann, S., Matyba, P., Chen, C., Kipp, L., Bauer, M., Kapteyn, H. C., Schneider, H. C., Rossnagel, K., Murnane, M. M., and Aeschlimann, M. Self-amplified photo-induced gap quenching in a correlated electron material. United States: N. p., 2016. Web. doi:10.1038/ncomms12902.
Mathias, S., Eich, S., Urbancic, J., Michael, S., Carr, A. V., Emmerich, S., Stange, A., Popmintchev, T., Rohwer, T., Wiesenmayer, M., Ruffing, A., Jakobs, S., Hellmann, S., Matyba, P., Chen, C., Kipp, L., Bauer, M., Kapteyn, H. C., Schneider, H. C., Rossnagel, K., Murnane, M. M., & Aeschlimann, M. Self-amplified photo-induced gap quenching in a correlated electron material. United States. doi:10.1038/ncomms12902.
Mathias, S., Eich, S., Urbancic, J., Michael, S., Carr, A. V., Emmerich, S., Stange, A., Popmintchev, T., Rohwer, T., Wiesenmayer, M., Ruffing, A., Jakobs, S., Hellmann, S., Matyba, P., Chen, C., Kipp, L., Bauer, M., Kapteyn, H. C., Schneider, H. C., Rossnagel, K., Murnane, M. M., and Aeschlimann, M. Tue . "Self-amplified photo-induced gap quenching in a correlated electron material". United States. doi:10.1038/ncomms12902. https://www.osti.gov/servlets/purl/1430130.
@article{osti_1430130,
title = {Self-amplified photo-induced gap quenching in a correlated electron material},
author = {Mathias, S. and Eich, S. and Urbancic, J. and Michael, S. and Carr, A. V. and Emmerich, S. and Stange, A. and Popmintchev, T. and Rohwer, T. and Wiesenmayer, M. and Ruffing, A. and Jakobs, S. and Hellmann, S. and Matyba, P. and Chen, C. and Kipp, L. and Bauer, M. and Kapteyn, H. C. and Schneider, H. C. and Rossnagel, K. and Murnane, M. M. and Aeschlimann, M.},
abstractNote = {Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. Here, we show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe2, our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains—on a microscopic level—the extremely fast response of this material to ultrafast optical excitation.},
doi = {10.1038/ncomms12902},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {2016},
month = {10}
}

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