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This content will become publicly available on March 13, 2019

Title: Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZT samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.
 [1] ;  [2] ;  [3]
  1. Korea Univ., Seoul (Korea, Republic of). Dept. of Radiologic Science, and School of Health and Environmental Science
  2. Kyushu Univ., Fukuoka (Japan). Dept. of Health Sciences, Graduate School of Medical Sciences
  3. Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
Publication Date:
Report Number(s):
Journal ID: ISSN 0374-4884; PII: 3502
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of the Korean Physical Society
Additional Journal Information:
Journal Volume: 72; Journal Issue: 4; Journal ID: ISSN 0374-4884
Korean Physical Society
Research Org:
Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Org:
USDOE Office of Environmental Management (EM)
Country of Publication:
United States
36 MATERIALS SCIENCE; CdZnTe; trap level; MIS devices; Capacitance measurement
OSTI Identifier: