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Title: Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

Journal Article · · ECS Journal of Solid State Science and Technology

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1429733
Alternate ID(s):
OSTI ID: 1393785
Report Number(s):
SAND--2017-1521J; 654257
Journal Information:
ECS Journal of Solid State Science and Technology, Journal Name: ECS Journal of Solid State Science and Technology Journal Issue: 2 Vol. 6; ISSN 2162-8769
Publisher:
Electrochemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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Temperature-Dependent Electrical Characteristics of β-Ga 2 O 3 Diodes with W Schottky Contacts up to 500°C journal December 2018
Perspective: Ga 2 O 3 for ultra-high power rectifiers and MOSFETS journal December 2018
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Amorphous gallium oxide sulfide: A highly mismatched alloy journal September 2019
Progress in efficient doping of high aluminum-containing group III-nitrides journal March 2018
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy journal May 2019
Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor journal October 2019
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates journal October 2019
Thermal Simulations of High Current β-Ga 2 O 3 Schottky Rectifiers journal January 2019
Comparison of Dual-Stack Dielectric Field Plates on β-Ga 2 O 3 Schottky Rectifiers journal January 2019
High‐Temperature Operation of Al x Ga 1− x N ( x  > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides journal February 2020
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric journal October 2019
Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors journal January 2019