Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
Abstract
“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1429733
- Report Number(s):
- SAND-2017-1521J
Journal ID: ISSN 2162-8769; 654257
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ECS Journal of Solid State Science and Technology
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 2; Journal ID: ISSN 2162-8769
- Publisher:
- Electrochemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Kaplar, R. J., Allerman, A. A., Armstrong, A. M., Crawford, M. H., Dickerson, J. R., Fischer, A. J., Baca, A. G., and Douglas, E. A. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices. United States: N. p., 2016.
Web. doi:10.1149/2.0111702jss.
Kaplar, R. J., Allerman, A. A., Armstrong, A. M., Crawford, M. H., Dickerson, J. R., Fischer, A. J., Baca, A. G., & Douglas, E. A. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices. United States. https://doi.org/10.1149/2.0111702jss
Kaplar, R. J., Allerman, A. A., Armstrong, A. M., Crawford, M. H., Dickerson, J. R., Fischer, A. J., Baca, A. G., and Douglas, E. A. Tue .
"Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices". United States. https://doi.org/10.1149/2.0111702jss. https://www.osti.gov/servlets/purl/1429733.
@article{osti_1429733,
title = {Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices},
author = {Kaplar, R. J. and Allerman, A. A. and Armstrong, A. M. and Crawford, M. H. and Dickerson, J. R. and Fischer, A. J. and Baca, A. G. and Douglas, E. A.},
abstractNote = {“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.},
doi = {10.1149/2.0111702jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 2,
volume = 6,
place = {United States},
year = {2016},
month = {12}
}
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