Vertical GaN Power Diodes With a Bilayer Edge Termination
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journal
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January 2016 |
Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
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journal
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December 2014 |
Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers
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journal
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February 2012 |
AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
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journal
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May 2008 |
Optimum semiconductors for high-power electronics
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journal
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January 1989 |
6.5 kV SiC normally-off JFETs — Technology status
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conference
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October 2014 |
An assessment of wide bandgap semiconductors for power devices
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journal
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May 2003 |
Merits of gallium nitride based power conversion
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journal
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June 2013 |
Al0 .3Ga0.7N PN diode with breakdown voltage >1600 V
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journal
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July 2016 |
Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation
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journal
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February 2013 |
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems
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journal
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June 2013 |
AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation
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journal
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January 2014 |
AlGaN Channel HEMT With Extremely High Breakdown Voltage
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journal
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March 2013 |
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
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journal
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December 2010 |
Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V
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journal
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February 2016 |
A numerical study of carrier impact ionization in Al x Ga 1− x N
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journal
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May 2012 |
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
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journal
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June 2005 |
Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions
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journal
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June 2003 |
Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition
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journal
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February 2007 |
Gallium nitride devices for power electronic applications
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journal
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June 2013 |
Ni/Au Schottky diodes on AlxGa1-xN (0.7<1) grown on AlN single crystal substrates
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journal
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June 2011 |
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
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journal
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August 2008 |
High Breakdown ( >1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
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journal
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September 2010 |
Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality
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journal
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May 2010 |
High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates
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journal
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April 2006 |
An AlN/Al 0.85 Ga 0.15 N high electron mobility transistor
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journal
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July 2016 |
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
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journal
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January 2014 |
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
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journal
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June 2015 |
High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p – i – n Vertical Conducting Diode on n -SiC Substrate
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journal
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April 2007 |
Schottky barrier properties of various metals on n-type GaN
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journal
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October 1996 |
AlGaN channel field effect transistors with graded heterostructure ohmic contacts
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journal
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September 2016 |
AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal
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journal
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June 2013 |
Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
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journal
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June 2008 |
Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$
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journal
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March 2013 |
Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates
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journal
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February 2014 |
High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer
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journal
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February 2013 |
Progress in sic Materials/Devices and Their Competition
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journal
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March 2012 |
Problems related to p-n junctions in silicon
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journal
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January 1961 |