Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

Kaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; Crawford, M. H.; Dickerson, J. R.; Fischer, A. J.; Baca, A. G.; Douglas, E. A.

doi:10.1149/2.0111702jss

Title: Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

Journal Article · 19 December 2016 · ECS Journal of Solid State Science and Technology

DOI: https://doi.org/10.1149/2.0111702jss · OSTI ID:1429733

Kaplar, R. J. ^[1]; Allerman, A. A. ^[1]; Armstrong, A. M. ^[1]; Crawford, M. H. ^[1]; Dickerson, J. R. ^[1]; Fischer, A. J. ^[1]; Baca, A. G. ^[1]; Douglas, E. A. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1429733

Alternate ID(s):: OSTI ID: 1393785

Report Number(s):: SAND--2017-1521J; 654257

Journal Information:: ECS Journal of Solid State Science and Technology, Journal Name: ECS Journal of Solid State Science and Technology Journal Issue: 2 Vol. 6; ISSN 2162-8769

Publisher:: Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (38)

Vertical GaN Power Diodes With a Bilayer Edge Termination Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N. IEEE Transactions on Electron Devices, Vol. 63, Issue 1, p. 419-425 https://doi.org/10.1109/TED.2015.2502186	journal	January 2016
Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage Bajaj, Sanyam; Hung, Ting-Hsiang; Akyol, Fatih Applied Physics Letters, Vol. 105, Issue 26 https://doi.org/10.1063/1.4905323	journal	December 2014
Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki physica status solidi (a), Vol. 209, Issue 3 https://doi.org/10.1002/pssa.201100379	journal	February 2012
AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit Raman, Ajay; Dasgupta, Sansaptak; Rajan, Siddharth Japanese Journal of Applied Physics, Vol. 47, Issue 5 https://doi.org/10.1143/JJAP.47.3359	journal	May 2008
Optimum semiconductors for high-power electronics Shenai, K.; Scott, R. S.; Baliga, B. J. IEEE Transactions on Electron Devices, Vol. 36, Issue 9 https://doi.org/10.1109/16.34247	journal	January 1989
6.5 kV SiC normally-off JFETs — Technology status Hostetler, J. L.; Alexandrov, P.; Li, X. 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) https://doi.org/10.1109/WiPDA.2014.6964642	conference	October 2014
An assessment of wide bandgap semiconductors for power devices Hudgins, J. L.; Simin, G. S.; Santi, E. IEEE Transactions on Power Electronics, Vol. 18, Issue 3 https://doi.org/10.1109/TPEL.2003.810840	journal	May 2003
Merits of gallium nitride based power conversion Scott, Mark J.; Fu, Lixing; Zhang, Xuan Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074013	journal	June 2013
Al0 .3Ga0.7N PN diode with breakdown voltage >1600 V Armstrong, A. M.; King, M. P.; Kaplar, R. J. Electronics Letters, Vol. 52, Issue 15 https://doi.org/10.1049/el.2016.1280	journal	July 2016
Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation Liu, Gang; Ahyi, Ayayi C.; Xu, Yi IEEE Electron Device Letters, Vol. 34, Issue 2 https://doi.org/10.1109/LED.2012.2233458	journal	February 2013
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems Su, Ming; Chen, Chingchi; Rajan, Siddharth Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074012	journal	June 2013
AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation Yafune, N.; Akita, K.; Hashimoto, S. Electronics Letters, Vol. 50, Issue 3 https://doi.org/10.1049/el.2013.2846	journal	January 2014
AlGaN Channel HEMT With Extremely High Breakdown Voltage Nanjo, Takuma; Imai, Akifumi; Suzuki, Yosuke IEEE Transactions on Electron Devices, Vol. 60, Issue 3 https://doi.org/10.1109/TED.2012.2233742	journal	March 2013
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate Tokuda, Hirokuni; Hatano, Maiko; Yafune, Norimasa Applied Physics Express, Vol. 3, Issue 12 https://doi.org/10.1143/APEX.3.121003	journal	December 2010
Field-Plated Ga ₂ O ₃ MOSFETs With a Breakdown Voltage of Over 750 V Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2512279	journal	February 2016
A numerical study of carrier impact ionization in Al _x Ga ₁₋ _x N Bellotti, Enrico; Bertazzi, Francesco Journal of Applied Physics, Vol. 111, Issue 10 https://doi.org/10.1063/1.4719967	journal	May 2012
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers Lee, S. R.; West, A. M.; Allerman, A. A. Applied Physics Letters, Vol. 86, Issue 24 https://doi.org/10.1063/1.1947367	journal	June 2005
Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions Lin, Zhaojun; Lu, Wu; Lee, Jaesun Applied Physics Letters, Vol. 82, Issue 24 https://doi.org/10.1063/1.1584077	journal	June 2003
Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition France, Ryan; Xu, Tao; Chen, Papo Applied Physics Letters, Vol. 90, Issue 6 https://doi.org/10.1063/1.2458399	journal	February 2007
Gallium nitride devices for power electronic applications Baliga, B. Jayant Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074011	journal	June 2013
Ni/Au Schottky diodes on AlxGa1-xN (0.7<1) grown on AlN single crystal substrates Xie, Jinqiao; Mia, Seiji; Dalmau, Rafael physica status solidi (c), Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201001009	journal	June 2011
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements Lelis, Aivars J.; Habersat, Daniel; Green, Ronald IEEE Transactions on Electron Devices, Vol. 55, Issue 8 https://doi.org/10.1109/TED.2008.926672	journal	August 2008
High Breakdown ( >1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology Lu, Bin; Palacios, Tomás IEEE Electron Device Letters, Vol. 31, Issue 9, p. 951-953 https://doi.org/10.1109/LED.2010.2052587	journal	September 2010
Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality Hashimoto, Shin; Akita, Katsushi; Tanabe, Tatsuya physica status solidi (c), Vol. 7, Issue 7-8 https://doi.org/10.1002/pssc.200983440	journal	May 2010
High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya Applied Physics Letters, Vol. 88, Issue 17 https://doi.org/10.1063/1.2198092	journal	April 2006
An AlN/Al _0.85 Ga _0.15 N high electron mobility transistor Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A. Applied Physics Letters, Vol. 109, Issue 3 https://doi.org/10.1063/1.4959179	journal	July 2016
Activation of Mg implanted in GaN by multicycle rapid thermal annealing Kub, F. J.; Eddy, C. R.; Hite, J. K. Electronics Letters, Vol. 50, Issue 3 https://doi.org/10.1049/el.2013.3214	journal	January 2014
Silicon carbide: A unique platform for metal-oxide-semiconductor physics Liu, Gang; Tuttle, Blair R.; Dhar, Sarit Applied Physics Reviews, Vol. 2, Issue 2 https://doi.org/10.1063/1.4922748	journal	June 2015
High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p – i – n Vertical Conducting Diode on n -SiC Substrate Nishikawa, Atsushi; Kumakura, Kazuhide; Makimoto, Toshiki Japanese Journal of Applied Physics, Vol. 46, Issue 4B https://doi.org/10.1143/JJAP.46.2316	journal	April 2007
Schottky barrier properties of various metals on n-type GaN Schmitz, A. C.; Ping, A. T.; Khan, M. Asif Semiconductor Science and Technology, Vol. 11, Issue 10 https://doi.org/10.1088/0268-1242/11/10/002	journal	October 1996
AlGaN channel field effect transistors with graded heterostructure ohmic contacts Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram Applied Physics Letters, Vol. 109, Issue 13 https://doi.org/10.1063/1.4963860	journal	September 2016
AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal Hahn, Herwig; Reuters, Ben; Kalisch, Holger Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074017	journal	June 2013
Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors Nanjo, Takuma; Takeuchi, Misaichi; Suita, Muneyoshi Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2949087	journal	June 2008
Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$ Veliadis, V.; Steiner, B.; Lawson, K. IEEE Electron Device Letters, Vol. 34, Issue 3 https://doi.org/10.1109/LED.2013.2241724	journal	March 2013
Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates Allerman, A. A.; Crawford, M. H.; Lee, S. R. Journal of Crystal Growth, Vol. 388 https://doi.org/10.1016/j.jcrysgro.2013.11.052	journal	February 2014
High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer Sharma, Y. K.; Ahyi, A. C.; Isaacs-Smith, T. IEEE Electron Device Letters, Vol. 34, Issue 2 https://doi.org/10.1109/LED.2012.2232900	journal	February 2013
Progress in sic Materials/Devices and Their Competition Schroder, Dieter K. International Journal of High Speed Electronics and Systems, Vol. 21, Issue 01 https://doi.org/10.1142/S0129156412500097	journal	March 2012
Problems related to p-n junctions in silicon Shockley, William Solid-State Electronics, Vol. 2, Issue 1 https://doi.org/10.1016/0038-1101(61)90054-5	journal	January 1961

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Perspective: Ga ₂ O ₃ for ultra-high power rectifiers and MOSFETS Pearton, S. J.; Ren, Fan; Tadjer, Marko Journal of Applied Physics, Vol. 124, Issue 22 https://doi.org/10.1063/1.5062841	journal	December 2018
Optimization of Edge Termination Techniques for β-Ga ₂ O ₃ Schottky Rectifiers Sharma, Ribhu; Patrick, Erin E.; Law, M. E. ECS Journal of Solid State Science and Technology, Vol. 8, Issue 12 https://doi.org/10.1149/2.0141912jss	journal	January 2019
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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Lundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5115013	journal	October 2019
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates Abid, Idriss; Kabouche, Riad; Bougerol, Catherine Micromachines, Vol. 10, Issue 10 https://doi.org/10.3390/mi10100690	journal	October 2019
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Comparison of Dual-Stack Dielectric Field Plates on β-Ga ₂ O ₃ Schottky Rectifiers Carey, Patrick H.; Yang, Jiancheng; Ren, Fan ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0391907jss	journal	January 2019
High‐Temperature Operation of Al _x Ga _{1− x} N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides Mollah, Shahab; Hussain, Kamal; Floyd, Richard physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900802	journal	February 2020
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