Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area

Wang, Peng; Sternberg, Andrew L.; Kozub, John A.; Zhang, En Xia; Dodds, Nathaniel A.; Jordan, Scott L.; Fleetwood, Daniel M.; Reed, Robert A.; Schrimpf, Ronald D.

doi:10.1109/TNS.2017.2781199

Title: Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area

Full Record
Other Related Research

Abstract

Two-photon absorption (TPA) testing is employed to analyze the laser-induced latchup sensitive-volume (SV) of a specially designed test structure. This method takes into account the existence of an onset region in which the probability of triggering latchup transitions from zero to one as the laser pulse energy increases. This variability is attributed to pulse-to-pulse variability, uncertainty in measurement of the pulse energy, and variation in local carrier density and temperature. For each spatial position, the latchup probability associated with a given energy is calculated from multiple pulses. The latchup probability data are well-described by a Weibull distribution. The results show that the area between p-n-p-n cell structures is more sensitive than the p+ and n+ source areas, and locations far from the well contacts are more sensitive than those near the contact region. The transition from low probability of latchup to high probability is more abrupt near the source contacts than it is for the surrounding areas.

Authors:

^[1];

^[1]; Kozub, John A. ^[1];

^[1]; Dodds, Nathaniel A. ^[2]; Jordan, Scott L. ^[3];

^[1]; Reed, Robert A. ^[1];

^[1]

Vanderbilt Univ., Nashville, TN (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Jazz Zemiconductor Trusted Foundry, Newport Beach, CA (United States)

Publication Date:: 2017-12-07

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1429707

Report Number(s):: SAND-2017-13234J
Journal ID: ISSN 0018-9499; 659386; TRN: US1802743

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 65; Journal Issue: 1; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS

Citation Formats


                    Wang, Peng, Sternberg, Andrew L., Kozub, John A., Zhang, En Xia, Dodds, Nathaniel A., Jordan, Scott L., Fleetwood, Daniel M., Reed, Robert A., and Schrimpf, Ronald D.. Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area.  United States: N. p., 2017. 
Web.  doi:10.1109/TNS.2017.2781199.

Copy to clipboard


                    Wang, Peng, Sternberg, Andrew L., Kozub, John A., Zhang, En Xia, Dodds, Nathaniel A., Jordan, Scott L., Fleetwood, Daniel M., Reed, Robert A., & Schrimpf, Ronald D.. Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area.  United States.  https://doi.org/10.1109/TNS.2017.2781199

Copy to clipboard


                    Wang, Peng, Sternberg, Andrew L., Kozub, John A., Zhang, En Xia, Dodds, Nathaniel A., Jordan, Scott L., Fleetwood, Daniel M., Reed, Robert A., and Schrimpf, Ronald D.. Thu .  
"Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area".  United States.  https://doi.org/10.1109/TNS.2017.2781199.  https://www.osti.gov/servlets/purl/1429707.

Copy to clipboard


                    
@article{osti_1429707,

  title        = {Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area},

  author       = {Wang, Peng and Sternberg, Andrew L. and Kozub, John A. and Zhang, En Xia and Dodds, Nathaniel A. and Jordan, Scott L. and Fleetwood, Daniel M. and Reed, Robert A. and Schrimpf, Ronald D.},

  abstractNote = {Two-photon absorption (TPA) testing is employed to analyze the laser-induced latchup sensitive-volume (SV) of a specially designed test structure. This method takes into account the existence of an onset region in which the probability of triggering latchup transitions from zero to one as the laser pulse energy increases. This variability is attributed to pulse-to-pulse variability, uncertainty in measurement of the pulse energy, and variation in local carrier density and temperature. For each spatial position, the latchup probability associated with a given energy is calculated from multiple pulses. The latchup probability data are well-described by a Weibull distribution. The results show that the area between p-n-p-n cell structures is more sensitive than the p+ and n+ source areas, and locations far from the well contacts are more sensitive than those near the contact region. The transition from low probability of latchup to high probability is more abrupt near the source contacts than it is for the surrounding areas.},

  doi          = {10.1109/TNS.2017.2781199},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 1,

  volume       = 65,

  place        = {United States},

  year         = {2017},

  month        = {12}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1109/TNS.2017.2781199

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 6 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Microbeam mapping of single event latchups and single event upsets in CMOS SRAMs

Journal Article Barak, J ; Adler, E ; Fischer, B E ; ... - IEEE Transactions on Nuclear Science

The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS RAM HM65162 is presented. The authors found that the shapes of the sensitive areas depend on V{sub DD}, on the ions being used and on the site on the chip being hit by the ion. In particular, they found SEL sensitive sites close to the main power supply lines between the memory-bit-arrays by detecting the accompanying current surge. All these SELs were also accompanied by bit-flips elsewhere in the memory (which they call indirect SEUs in contrast to the well known SEUs induced inmore »« less
https://doi.org/10.1109/23.685246
Kinematic analysis of strong motion P and SV waves from the sterling event

Journal Article Langston, C A - J. Geophys. Res.; (United States)

P and SV velocity waveforms from the Sterling explosion of December 3, 1966, are analyzed from a point of view often taken in earthquake source studies. The detonation occurred in the cavity excavated by the Salmon explosion within the Tatum salt dome, Mississippii, Velocity recordings taken from nearby borehole strong motion instruments show the occurrence of significant SV energy (Perret, 1968a, b). Kinematic source models are constructed by considering constraints afforded by the preshot cavity, condition of the surrounding material, and aspects of the P and SV waveforms such as wave polarity and duration. Waveforms for these models are computedmore »« less
https://doi.org/10.1029/JB088iB04p03486
Latchup in CMOS from single particles

Conference Johnston, A H ; Hughlock, B W - IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

Single-particle latchup in bulk CMOS is examined, using heavy ions, a californium fission source, and a pulsed laser. Experiments with the laser demonstrated that latchup triggering was caused by secondary photocurrent in either the vertical or lateral parasitic transistor. Charge diffusion is shown to be important for bipolar transistor responses in latchup, which in turn makes it important to have uniform charge deposition for depths of 10 {mu}m or more. Californium sources have insufficient range, which causes cross sections measured with californium to be much lower than cross sections from heavy ion experiments.
The effect of circuit topology on radiation-induced latchup

Conference Johnson, A H ; Plaag, R E ; Baze, M P - IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

This paper reports topological factors that affect latchup investigated using test structures fabricated with two different CMOS foundries. The geometry of isolation well contacts was found to have a large effect on photocurrent responses because of the effect of the lateral resistance of the well. Experiments that delayed the application of bias until time periods long after the radiation pulse subsided showed that latchup would still occur, with relatively small increases in the radiation intensity required to induce latchup until the delays exceeded several microseconds. This shows that the fast transition of the radiation pulse is not required to triggermore »« less
Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures

Journal Article Moss, S C ; LaLumondiere, S D ; Scarpulla, J R ; ... - IEEE Transactions on Nuclear Science

The authors show that the thresholds for picosecond (psec) laser pulse-induced latchup and energetic particle-induced latchup are well correlated over a range of bulk CMOS test structures designed to be susceptible to latchup. The spatial length of the latchup-sensitive node of the test structures covers a range of values that commonly occur in bulk CMOS devices. The accuracy of this correlation implies that laser-induced latchup can be used for hardness assurance and, under the proper conditions, can be an accurate predictor of latchup threshold linear energy transfer (LET) for most bulk CMOS devices.
https://doi.org/10.1109/23.489239

Similar Records