skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on August 20, 2019

Title: Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations

In this study, we demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Finally, ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2017-11592J
Journal ID: ISSN 0947-8396; PII: 2041; TRN: US1802316
Grant/Contract Number:
AC04-94AL85000; NA0003525
Type:
Accepted Manuscript
Journal Name:
Applied Physics. A, Materials Science and Processing
Additional Journal Information:
Journal Volume: 124; Journal Issue: 9; Journal ID: ISSN 0947-8396
Publisher:
Springer
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
OSTI Identifier:
1429668

Bielejec, Edward S., Pacheco, Jose L., Perry, Daniel Lee, Marinella, Matthew, and Hughart, David Russell. Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations. United States: N. p., Web. doi:10.1007/s00339-018-2041-3.
Bielejec, Edward S., Pacheco, Jose L., Perry, Daniel Lee, Marinella, Matthew, & Hughart, David Russell. Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations. United States. doi:10.1007/s00339-018-2041-3.
Bielejec, Edward S., Pacheco, Jose L., Perry, Daniel Lee, Marinella, Matthew, and Hughart, David Russell. 2018. "Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations". United States. doi:10.1007/s00339-018-2041-3.
@article{osti_1429668,
title = {Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations},
author = {Bielejec, Edward S. and Pacheco, Jose L. and Perry, Daniel Lee and Marinella, Matthew and Hughart, David Russell},
abstractNote = {In this study, we demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Finally, ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.},
doi = {10.1007/s00339-018-2041-3},
journal = {Applied Physics. A, Materials Science and Processing},
number = 9,
volume = 124,
place = {United States},
year = {2018},
month = {8}
}

Works referenced in this record:

Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”
journal, August 2013
  • Lohn, Andrew J.; Stevens, James E.; Mickel, Patrick R.
  • Applied Physics Letters, Vol. 103, Issue 6, Article No. 063502
  • DOI: 10.1063/1.4817927

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
journal, November 2011
  • Miao, Feng; Strachan, John Paul; Yang, J. Joshua
  • Advanced Materials, Vol. 23, Issue 47, p. 5633-5640
  • DOI: 10.1002/adma.201103379

Modeling of filamentary resistive memory by concentric cylinders with variable conductivity
journal, November 2014
  • Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J.
  • Applied Physics Letters, Vol. 105, Issue 18, Article No. 183511
  • DOI: 10.1063/1.4901351

A physical model of switching dynamics in tantalum oxide memristive devices
journal, June 2013
  • Mickel, Patrick R.; Lohn, Andrew J.; Joon Choi, Byung
  • Applied Physics Letters, Vol. 102, Issue 22, Article No. 223502
  • DOI: 10.1063/1.4809530

Detection and characterization of multi-filament evolution during resistive switching
journal, August 2014
  • Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.
  • Applied Physics Letters, Vol. 105, Issue 5, Article No. 053503
  • DOI: 10.1063/1.4892471

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5?x/TaO2?x bilayer structures
journal, July 2011
  • Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
  • Nature Materials, Vol. 10, Issue 8, p. 625-630
  • DOI: 10.1038/nmat3070

Memristive devices for computing
journal, January 2013
  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240