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Title: Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations

Abstract

In this study, we demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Finally, ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1429668
Report Number(s):
SAND-2017-11592J
Journal ID: ISSN 0947-8396; PII: 2041; TRN: US1802316
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics. A, Materials Science and Processing
Additional Journal Information:
Journal Volume: 124; Journal Issue: 9; Journal ID: ISSN 0947-8396
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY

Citation Formats

Bielejec, Edward S., Pacheco, Jose L., Perry, Daniel Lee, Marinella, Matthew, and Hughart, David Russell. Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations. United States: N. p., 2018. Web. doi:10.1007/s00339-018-2041-3.
Bielejec, Edward S., Pacheco, Jose L., Perry, Daniel Lee, Marinella, Matthew, & Hughart, David Russell. Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations. United States. doi:10.1007/s00339-018-2041-3.
Bielejec, Edward S., Pacheco, Jose L., Perry, Daniel Lee, Marinella, Matthew, and Hughart, David Russell. Mon . "Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations". United States. doi:10.1007/s00339-018-2041-3. https://www.osti.gov/servlets/purl/1429668.
@article{osti_1429668,
title = {Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations},
author = {Bielejec, Edward S. and Pacheco, Jose L. and Perry, Daniel Lee and Marinella, Matthew and Hughart, David Russell},
abstractNote = {In this study, we demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Finally, ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.},
doi = {10.1007/s00339-018-2041-3},
journal = {Applied Physics. A, Materials Science and Processing},
number = 9,
volume = 124,
place = {United States},
year = {2018},
month = {8}
}

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