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Title: Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.
Authors:
 [1] ;  [1] ;  [2]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  2. New Mexico Institute of Mining and Technology, Socorro, NM (United States)
Publication Date:
Report Number(s):
SAND-2017-11476J
Journal ID: ISSN 1938-6737; 658063
Grant/Contract Number:
AC04-94AL85000; NA0003525
Type:
Accepted Manuscript
Journal Name:
ECS Transactions (Online)
Additional Journal Information:
Journal Name: ECS Transactions (Online); Journal Volume: 80; Journal Issue: 10; Journal ID: ISSN 1938-6737
Publisher:
Electrochemical Society
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1429661

Gao, Xujiao, Huang, Andy, and Kerr, Bert. Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset. United States: N. p., Web. doi:10.1149/08010.1005ecst.
Gao, Xujiao, Huang, Andy, & Kerr, Bert. Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset. United States. doi:10.1149/08010.1005ecst.
Gao, Xujiao, Huang, Andy, and Kerr, Bert. 2017. "Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset". United States. doi:10.1149/08010.1005ecst.
@article{osti_1429661,
title = {Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset},
author = {Gao, Xujiao and Huang, Andy and Kerr, Bert},
abstractNote = {In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.},
doi = {10.1149/08010.1005ecst},
journal = {ECS Transactions (Online)},
number = 10,
volume = 80,
place = {United States},
year = {2017},
month = {10}
}