skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Molecular dynamics studies of InGaN growth on nonpolar ( 11 2 ¯ 0 ) GaN surfaces


Abstract not provided.

; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1418881; OSTI ID: 1429659
Report Number(s):
SAND2017-11142J; SAND-2017-11346J
Journal ID: ISSN 2475-9953; PRMHAR; 658073
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 1; Journal ID: ISSN 2475-9953
American Physical Society (APS)
Country of Publication:
United States

Citation Formats

Chu, K., Gruber, J., Zhou, X. W., Jones, R. E., Lee, S. R., and Tucker, G. J. Molecular dynamics studies of InGaN growth on nonpolar (112¯0) GaN surfaces. United States: N. p., 2018. Web. doi:10.1103/PhysRevMaterials.2.013402.
Chu, K., Gruber, J., Zhou, X. W., Jones, R. E., Lee, S. R., & Tucker, G. J. Molecular dynamics studies of InGaN growth on nonpolar (112¯0) GaN surfaces. United States. doi:10.1103/PhysRevMaterials.2.013402.
Chu, K., Gruber, J., Zhou, X. W., Jones, R. E., Lee, S. R., and Tucker, G. J. Mon . "Molecular dynamics studies of InGaN growth on nonpolar (112¯0) GaN surfaces". United States. doi:10.1103/PhysRevMaterials.2.013402.
title = {Molecular dynamics studies of InGaN growth on nonpolar (112¯0) GaN surfaces},
author = {Chu, K. and Gruber, J. and Zhou, X. W. and Jones, R. E. and Lee, S. R. and Tucker, G. J.},
abstractNote = {Abstract not provided.},
doi = {10.1103/PhysRevMaterials.2.013402},
journal = {Physical Review Materials},
number = 1,
volume = 2,
place = {United States},
year = {2018},
month = {1}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Figures / Tables:

Figure 1. Figure 1.: Simulated GaN films grown on GaN at (a) 1800 K (T/Tm = 0.50), (b) 2200 K (T/Tm = 0.62), and (c) 2400 K (T/Tm = 0.67).

Save / Share:

Works referenced in this record:

Mechanical properties of thin films
journal, November 1989

A Stillinger-Weber Potential for InGaN
journal, August 2017

  • Zhou, X. W.; Jones, R. E.
  • Journal of Materials Science Research, Vol. 6, Issue 4
  • DOI: 10.5539/jmsr.v6n4p88

Atomic structure of dislocation cores in GaN
journal, May 2002

An atomistically validated continuum model for strain relaxation and misfit dislocation formation
journal, June 2016

  • Zhou, X. W.; Ward, D. K.; Zimmerman, J. A.
  • Journal of the Mechanics and Physics of Solids, Vol. 91
  • DOI: 10.1016/j.jmps.2016.03.015

Molecular dynamics study of melting and freezing of small Lennard-Jones clusters
journal, September 1987

  • Honeycutt, J. Dana.; Andersen, Hans C.
  • The Journal of Physical Chemistry, Vol. 91, Issue 19, p. 4950-4963
  • DOI: 10.1021/j100303a014

An analytical bond-order potential for the aluminum copper binary system
journal, September 2016

Critical thickness calculations for InGaN/GaN
journal, May 2007

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007

  • Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina
  • Journal of Display Technology, Vol. 3, Issue 2, p. 160-175
  • DOI: 10.1109/JDT.2007.895339

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
journal, January 2011

  • Zhao, Hongping; Liu, Guangyu; Zhang, Jing
  • Optics Express, Vol. 19, Issue S4
  • DOI: 10.1364/OE.19.00A991

When group-III nitrides go infrared: New properties and perspectives
journal, July 2009

Atomistic calculations of dislocation core energy in aluminium
journal, February 2017

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
journal, December 2009

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies
journal, April 2001

  • Liliental-Weber, Z.; Benamara, M.; Washburn, J.
  • Journal of Electronic Materials, Vol. 30, Issue 4
  • DOI: 10.1007/s11664-001-0056-5

Automated identification and indexing of dislocations in crystal interfaces
journal, October 2012

  • Stukowski, Alexander; Bulatov, Vasily V.; Arsenlis, Athanasios
  • Modelling and Simulation in Materials Science and Engineering, Vol. 20, Issue 8
  • DOI: 10.1088/0965-0393/20/8/085007

Solid-state lighting: lamps, chips, and materials for tomorrow
journal, May 2004

Fast Parallel Algorithms for Short-Range Molecular Dynamics
journal, March 1995

Pinholes, Dislocations and Strain Relaxation in InGaN
journal, January 1998

  • Jahnen, B.; Albrecht, M.; Dorsch, W.
  • MRS Internet Journal of Nitride Semiconductor Research, Vol. 3
  • DOI: 10.1557/S1092578300001113

Structure identification methods for atomistic simulations of crystalline materials
journal, May 2012

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy
journal, November 2008

  • Feng, W.; Kuryatkov, V. V.; Chandolu, A.
  • Journal of Applied Physics, Vol. 104, Issue 10
  • DOI: 10.1063/1.3029695

Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
journal, June 2006

  • Liu, Rong; Mei, Jin; Srinivasan, Sridhar
  • Japanese Journal of Applied Physics, Vol. 45, Issue No. 22
  • DOI: 10.1143/JJAP.45.L549

Generation and behavior of pure-edge threading misfit dislocations in InxGa1−xN∕GaN multiple quantum wells
journal, November 2004

  • Lü, W.; Li, D. B.; Li, C. R.
  • Journal of Applied Physics, Vol. 96, Issue 9
  • DOI: 10.1063/1.1803633

The Promise and Challenge of Solid-State Lighting
journal, December 2001

  • Bergh, Arpad; Craford, George; Duggal, Anil
  • Physics Today, Vol. 54, Issue 12
  • DOI: 10.1063/1.1445547

Systematic analysis of local atomic structure combined with 3D computer graphics
journal, March 1994

Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth
journal, January 2013

  • Iida, Daisuke; Kondo, Yasunari; Sowa, Mihoko
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 3
  • DOI: 10.1002/pssr.201307023

Solid-State Lighting: Toward Superior Illumination
journal, October 2005

Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures
journal, November 2006

  • Liu, R.; Mei, J.; Srinivasan, S.
  • Applied Physics Letters, Vol. 89, Issue 20
  • DOI: 10.1063/1.2388895

Zinc-blende–wurtzite polytypism in semiconductors
journal, October 1992

Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
journal, May 2011

  • Romanov, Alexey E.; Young, Erin C.; Wu, Feng
  • Journal of Applied Physics, Vol. 109, Issue 10
  • DOI: 10.1063/1.3590141

Computer simulation of local order in condensed phases of silicon
journal, April 1985

Molecular dynamics simulations of substitutional diffusion
journal, February 2017

Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire
journal, October 2005

Theory of Threading Edge and Screw Dislocations in GaN
journal, November 1997

Illumination with solid state lighting technology
journal, January 2002

  • Steigerwald, D. A.; Bhat, J. C.; Collins, D.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2
  • DOI: 10.1109/2944.999186

Research challenges to ultra-efficient inorganic solid-state lighting
journal, December 2007

  • Phillips, J. M.; Coltrin, M. E.; Crawford, M. H.
  • Laser & Photonics Review, Vol. 1, Issue 4, p. 307-333
  • DOI: 10.1002/lpor.200710019

Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces
journal, May 2017

  • Gruber, J.; Zhou, X. W.; Jones, R. E.
  • Journal of Applied Physics, Vol. 121, Issue 19
  • DOI: 10.1063/1.4983066

A novel wavelength-adjusting method in InGaN-based light-emitting diodes
journal, December 2013

  • Deng, Zhen; Jiang, Yang; Ma, Ziguang
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep03389

Slip systems and misfit dislocations in InGaN epilayers
journal, December 2003

  • Srinivasan, S.; Geng, L.; Liu, R.
  • Applied Physics Letters, Vol. 83, Issue 25
  • DOI: 10.1063/1.1633029

Extracting dislocations and non-dislocation crystal defects from atomistic simulation data
journal, September 2010

  • Stukowski, Alexander; Albe, Karsten
  • Modelling and Simulation in Materials Science and Engineering, Vol. 18, Issue 8
  • DOI: 10.1088/0965-0393/18/8/085001

Solid-state lighting—a benevolent technology
journal, November 2006

Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
journal, August 2011

  • Hsu, Po Shan; Young, Erin C.; Romanov, Alexey E.
  • Applied Physics Letters, Vol. 99, Issue 8
  • DOI: 10.1063/1.3628459