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Title: Hybrid Integration of III-V Solar Microcells for High Efficiency Concentrated Photovoltaic Modules

Journal Article · · IEEE Journal of Selected Topics in Quantum Electronics
 [1];  [2];  [3];  [1];  [4];  [5];  [6];  [4];  [4];  [4];  [4];  [4];  [4];  [4];  [4];  [4];  [4];  [4];  [7];  [7] more »;  [7];  [7] « less
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Optoelectronics
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Lincoln Lab.
  3. Intel Corporation, Lehi, UT (United States)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  5. Vivint Solar, Lehi, UT (United States)
  6. mPower Technology, Albuquerque, NM (United States)
  7. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Material Science and Engineering

The design, fabrication and performance of InGaAs and InGaP/GaAs microcells are presented. These cells are integrated with a Si wafer providing a path for insertion in hybrid concentrated photovoltaic modules. Comparisons are made between bonded cells and cells fabricated on their native wafer. The bonded cells showed no evidence of degradation in spite of the integration process which involved significant processing including the removal of the III-V substrate. Results from a number of hybrid cell configurations were reported. These cells employed integration techniques including wafer level bonding of processed cells and solder bonding of the cells. Lastly, the cells themselves showed evidence of degradation in spite of the integration process, which involved significant processing including the removal of the III-V substrate.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; AR0000632; NA0003525
OSTI ID:
1429501
Report Number(s):
SAND2018-2517J; 661281
Journal Information:
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 24, Issue 2; ISSN 1077-260X
Publisher:
IEEE Lasers and Electro-optics SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Figures / Tables (16)


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