Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics
Abstract
Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a temperature gradient and external water partial pressure. We used this technique to fabricate ImClO4 thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of ($$2,\overline{1},0$$) and ($$1,0,\overline{2}$$) structural variants of R3m symmetry with a reversible polarization of 6.7 μC/cm2. The resulting ferroelectric domain structure leads to a reversible electromechanical response of d33 = 38.8 pm/V. Polarization switching results in a change of the refractive index, n, of single domains, $$\frac{Δn}{n}$$ = 0.3. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies.
- Authors:
-
- Temple University, Philadelphia, PA (United States). Department of Mechanical Engineering and Temple Materials Institute
- Southeast University, Nanjing (China)
- Temple University, Philadelphia, PA (United States). Department of Chemistry
- Univ. of Maryland, College Park, MD (United States). Department of Materials Science and Engineering
- Publication Date:
- Research Org.:
- Temple Univ., Philadelphia, PA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1429329
- Grant/Contract Number:
- SC0017928; SC0010307
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 8; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Zhang, Zhuolei, Li, Peng-Fei, Tang, Yuan-Yuan, Wilson, Andrew J., Willets, Katherine, Wuttig, Manfred, Xiong, Ren-Gen, and Ren, Shenqiang. Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics. United States: N. p., 2017.
Web. doi:10.1126/sciadv.1701008.
Zhang, Zhuolei, Li, Peng-Fei, Tang, Yuan-Yuan, Wilson, Andrew J., Willets, Katherine, Wuttig, Manfred, Xiong, Ren-Gen, & Ren, Shenqiang. Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics. United States. https://doi.org/10.1126/sciadv.1701008
Zhang, Zhuolei, Li, Peng-Fei, Tang, Yuan-Yuan, Wilson, Andrew J., Willets, Katherine, Wuttig, Manfred, Xiong, Ren-Gen, and Ren, Shenqiang. Wed .
"Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics". United States. https://doi.org/10.1126/sciadv.1701008. https://www.osti.gov/servlets/purl/1429329.
@article{osti_1429329,
title = {Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics},
author = {Zhang, Zhuolei and Li, Peng-Fei and Tang, Yuan-Yuan and Wilson, Andrew J. and Willets, Katherine and Wuttig, Manfred and Xiong, Ren-Gen and Ren, Shenqiang},
abstractNote = {Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a temperature gradient and external water partial pressure. We used this technique to fabricate ImClO4 thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of ($2,\overline{1},0$) and ($1,0,\overline{2}$) structural variants of R3m symmetry with a reversible polarization of 6.7 μC/cm2. The resulting ferroelectric domain structure leads to a reversible electromechanical response of d33 = 38.8 pm/V. Polarization switching results in a change of the refractive index, n, of single domains, $\frac{Δn}{n}$ = 0.3. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies.},
doi = {10.1126/sciadv.1701008},
journal = {Science Advances},
number = 8,
volume = 3,
place = {United States},
year = {2017},
month = {8}
}
Web of Science
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