Spin transport and spin torque in antiferromagnetic devices

Zelezny, J.; Wadley, P.; Olejnik, K.; Hoffmann, A.; Ohno, H.

doi:10.1038/s41567-018-0062-7

Title: Spin transport and spin torque in antiferromagnetic devices

Journal Article · 02 March 2018 · Nature Physics

DOI: https://doi.org/10.1038/s41567-018-0062-7 · OSTI ID:1429310

Zelezny, J. ^[1]; Wadley, P. ^[2]; Olejnik, K. ^[3]; Hoffmann, A. ^[4]; Ohno, H. ^[5]

Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Institute of Physics, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
Institute of Physics, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
Univ. of Nottingham (United Kingdom). School of Physics and Astronomy
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Tohoku Univ., Sendai (Japan). Center for Spintronics Integrated Systems, Center for Innovative Integrated Electronic Systems, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication and WPI Advanced Institute for Materials Research

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1429310

Journal Information:: Nature Physics, Vol. 14, Issue 3; ISSN 1745-2473

Publisher:: Nature Publishing Group (NPG)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 265 works

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Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system Fukami, Shunsuke; Zhang, Chaoliang; DuttaGupta, Samik arXiv https://doi.org/10.48550/arxiv.1507.00888	text	January 2015
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe Kriegner, D.; Vyborny, K.; Olejnik, K. arXiv https://doi.org/10.48550/arxiv.1508.04877	text	January 2015
Spin-orbit torques in locally and globally non-centrosymmetric crystals: Antiferromagnets and ferromagnets Železný, J.; Gao, H.; Manchon, Aurélien arXiv https://doi.org/10.48550/arxiv.1604.07590	text	January 2016
Spin diffusion and torques in disordered antiferromagnets Manchon, A. arXiv https://doi.org/10.48550/arxiv.1608.00140	text	January 2016
Optical determination of the Neel vector in a CuMnAs thin-film antiferromagnet Saidl, V.; Nemec, P.; Wadley, P. arXiv https://doi.org/10.48550/arxiv.1608.01941	text	January 2016
Purely Antiferromagnetic Magnetoelectric Random Access Memory Kosub, Tobias; Kopte, Martin; Hühne, Ruben arXiv https://doi.org/10.48550/arxiv.1611.07027	text	January 2016
Piezo-Magneto-Electric Effects in p-Doped Semiconductors Bernevig, B. Andrei; Vafek, Oskar arXiv https://doi.org/10.48550/arxiv.cond-mat/0408476	text	January 2004

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