Spin transport and spin torque in antiferromagnetic devices
Abstract
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.
- Authors:
-
- Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Institute of Physics, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
- Institute of Physics, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
- Univ. of Nottingham (United Kingdom). School of Physics and Astronomy
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Tohoku Univ., Sendai (Japan). Center for Spintronics Integrated Systems, Center for Innovative Integrated Electronic Systems, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication and WPI Advanced Institute for Materials Research
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1429310
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Physics
- Additional Journal Information:
- Journal Volume: 14; Journal Issue: 3; Journal ID: ISSN 1745-2473
- Publisher:
- Nature Publishing Group (NPG)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Magnetic properties and materials; Spintronics
Citation Formats
Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., and Ohno, H. Spin transport and spin torque in antiferromagnetic devices. United States: N. p., 2018.
Web. doi:10.1038/s41567-018-0062-7.
Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., & Ohno, H. Spin transport and spin torque in antiferromagnetic devices. United States. doi:10.1038/s41567-018-0062-7.
Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., and Ohno, H. Fri .
"Spin transport and spin torque in antiferromagnetic devices". United States. doi:10.1038/s41567-018-0062-7. https://www.osti.gov/servlets/purl/1429310.
@article{osti_1429310,
title = {Spin transport and spin torque in antiferromagnetic devices},
author = {Zelezny, J. and Wadley, P. and Olejnik, K. and Hoffmann, A. and Ohno, H.},
abstractNote = {Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.},
doi = {10.1038/s41567-018-0062-7},
journal = {Nature Physics},
number = 3,
volume = 14,
place = {United States},
year = {2018},
month = {3}
}
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Figures / Tables:
Fig B1: a, The two states of a ferromagnetic spin valve or tunneling junction. b, 1d tight-binding model used by Duine et al. c, Chemically realistic antiferromagnetic tunneling junctions considered by Stamenova et al. d, Calculations by Saidaoui et al. for various spin valves, which show strong decrease of themore »
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