Spin transport and spin torque in antiferromagnetic devices
Abstract
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.
- Authors:
-
- Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Institute of Physics, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
- Institute of Physics, Academy of Sciences of the Czech Republic, Praha (Czech Republic)
- Univ. of Nottingham (United Kingdom). School of Physics and Astronomy
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Tohoku Univ., Sendai (Japan). Center for Spintronics Integrated Systems, Center for Innovative Integrated Electronic Systems, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication and WPI Advanced Institute for Materials Research
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1429310
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Physics
- Additional Journal Information:
- Journal Volume: 14; Journal Issue: 3; Journal ID: ISSN 1745-2473
- Publisher:
- Nature Publishing Group (NPG)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Magnetic properties and materials; Spintronics
Citation Formats
Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., and Ohno, H. Spin transport and spin torque in antiferromagnetic devices. United States: N. p., 2018.
Web. doi:10.1038/s41567-018-0062-7.
Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., & Ohno, H. Spin transport and spin torque in antiferromagnetic devices. United States. https://doi.org/10.1038/s41567-018-0062-7
Zelezny, J., Wadley, P., Olejnik, K., Hoffmann, A., and Ohno, H. Fri .
"Spin transport and spin torque in antiferromagnetic devices". United States. https://doi.org/10.1038/s41567-018-0062-7. https://www.osti.gov/servlets/purl/1429310.
@article{osti_1429310,
title = {Spin transport and spin torque in antiferromagnetic devices},
author = {Zelezny, J. and Wadley, P. and Olejnik, K. and Hoffmann, A. and Ohno, H.},
abstractNote = {Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.},
doi = {10.1038/s41567-018-0062-7},
journal = {Nature Physics},
number = 3,
volume = 14,
place = {United States},
year = {2018},
month = {3}
}
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Figures / Tables:
Fig B1: a, The two states of a ferromagnetic spin valve or tunneling junction. b, 1d tight-binding model used by Duine et al. c, Chemically realistic antiferromagnetic tunneling junctions considered by Stamenova et al. d, Calculations by Saidaoui et al. for various spin valves, which show strong decrease of themore »
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Staggered field driven domain walls motion in antiferromagnetic heterojunctions
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Angle dependent magnetoresistance in heterostructures with antiferromagnetic and non-magnetic metals
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Switching of biaxial synthetic antiferromagnets: A micromagentic study
journal, December 2018
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Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism
journal, January 2019
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Spin-orbit torque-induced magnetization switching in epitaxial Au/Fe 4 N bilayer films
journal, March 2019
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Half-wave rectification of ac-magnetic-field effects by mixing thermal spin and charge currents in a NiO/Pt nanostructure
journal, August 2019
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Shape-imposed anisotropy in antiferromagnetic complex oxide nanostructures
journal, September 2019
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Non-magnetic origin of spin Hall magnetoresistance-like signals in Pt films and epitaxial NiO/Pt bilayers
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Tuning Interfacial Spins in Antiferromagnetic–Ferromagnetic–Heavy-Metal Heterostructures via Spin-Orbit Torque
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Optical injection of spin current into a zigzag nanoribbon of monolayer with antiferromagnetic Kekule distortion
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Spin-orbit torques in a Rashba honeycomb antiferromagnet
journal, December 2019
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Ultrafast domain wall motion in ferrimagnets induced by magnetic anisotropy gradient
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Hybrid quantum anomalous Hall effect at graphene-oxide interfaces
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Imaging of current induced Néel vector switching in antiferromagnetic
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Antiferromagnetic spin valve based on a heterostructure of two-dimensional hexagonal crystals
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Evaluation of spin diffusion length and spin Hall angle of the antiferromagnetic Weyl semimetal
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Anomalous Antiferromagnetism in Metallic Determined by Resonant X-ray Scattering
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Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging
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Electrical Switching of Tristate Antiferromagnetic Néel Order in Epitaxial Films
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Spin Seebeck Imaging of Spin-Torque Switching in Antiferromagnetic Pt / NiO Heterostructures
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Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers
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Spin pumping during the antiferromagnetic–ferromagnetic phase transition of iron–rhodium
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Magneto-Seebeck effect in Co 2 FeAl/MgO/Co 2 FeAl: first-principles calculations
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Orientation-dependent THz emission in non-collinear antiferromagnetic Mn 3 Sn and Mn 3 Sn-based heterostructures
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Current-Induced Domain Wall Motion in a Compensated Ferrimagnet
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Low Magnetic Damping of Ferrimagnetic GdFeCo Alloys
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From Fieldlike Torque to Antidamping Torque in Antiferromagnetic
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Spin-Orbit-Torque Switching Mediated by an Antiferromagnetic Insulator
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Tunable long-distance spin transport in a crystalline antiferromagnetic iron oxide
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Imaging antiferromagnetic domains in nickel oxide thin films by optical birefringence effect
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Dynamic magnetostriction for antiferromagnets
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Staggered field driven domain walls motion in antiferromagnetic heterojunctions
text, January 2018
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- arXiv
Antiferromagnetic spin valve from heterostructure of two-dimensional hexagonal crystals
text, January 2018
- Luo, Ma
- arXiv
Electric-Field Control of Magnetic Order: From FeRh to Topological Antiferromagnetic Spintronics
text, January 2018
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- arXiv
Tuning interfacial spins in antiferromagnetic / ferromagnetic / heavy metal heterostructures via spin-orbit torque
text, January 2019
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