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Title: Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Abstract

In this paper we introduce a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition, they lead to percolative transport through paths of minimal energy in the two-dimensional (2D) landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schrödinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room temperature. The current-voltage characteristics modeled by three-dimensional simulation of a full nitride-based light emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high-quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

Authors:
 [1];  [2];  [1];  [3];  [2];  [2];  [4];  [5];  [2];  [1]
  1. National Taiwan Univ., Taipei (Taiwan). Graduate Inst. of Photonics and Optoelectronics and Dept. of Electrical Engineering
  2. Univ. Paris-Saclay, Ecole Polytechnique, Palaiseau (France). Lab. of Condensed Matter Physics
  3. Univ. of Minnesota, Minneapolis, MN (United States). School of Mathematics
  4. Univ. of California, Santa Barbara, CA (United States). Dept. of Materials
  5. Univ. Paris-Saclay, Ecole Polytechnique, Palaiseau (France). Lab. of Condensed Matter Physics; Univ. of California, Santa Barbara, CA (United States). Dept. of Materials
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Building Technologies Office (EE-5B); Ministry of Science and Technology (MOST), Taipei (Taiwan); French National Research Agency (ANR); National Science Foundation (NSF)
OSTI Identifier:
1429094
Alternate Identifier(s):
OSTI ID: 1352105
Grant/Contract Number:  
EE0007096; 104-2923-E-002-004-MY3; 105-2221-E-002-098-MY3; ANR-14-CE05-0048-01
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 14; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 97 MATHEMATICS AND COMPUTING; 36 MATERIALS SCIENCE; disordered alloys; LEDs; semiconductor compounds; methods in transport

Citation Formats

Li, Chi-Kang, Piccardo, Marco, Lu, Li-Shuo, Mayboroda, Svitlana, Martinelli, Lucio, Peretti, Jacques, Speck, James S., Weisbuch, Claude, Filoche, Marcel, and Wu, Yuh-Renn. Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes. United States: N. p., 2017. Web. doi:10.1103/physrevb.95.144206.
Li, Chi-Kang, Piccardo, Marco, Lu, Li-Shuo, Mayboroda, Svitlana, Martinelli, Lucio, Peretti, Jacques, Speck, James S., Weisbuch, Claude, Filoche, Marcel, & Wu, Yuh-Renn. Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes. United States. doi:10.1103/physrevb.95.144206.
Li, Chi-Kang, Piccardo, Marco, Lu, Li-Shuo, Mayboroda, Svitlana, Martinelli, Lucio, Peretti, Jacques, Speck, James S., Weisbuch, Claude, Filoche, Marcel, and Wu, Yuh-Renn. Tue . "Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes". United States. doi:10.1103/physrevb.95.144206. https://www.osti.gov/servlets/purl/1429094.
@article{osti_1429094,
title = {Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes},
author = {Li, Chi-Kang and Piccardo, Marco and Lu, Li-Shuo and Mayboroda, Svitlana and Martinelli, Lucio and Peretti, Jacques and Speck, James S. and Weisbuch, Claude and Filoche, Marcel and Wu, Yuh-Renn},
abstractNote = {In this paper we introduce a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition, they lead to percolative transport through paths of minimal energy in the two-dimensional (2D) landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schrödinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room temperature. The current-voltage characteristics modeled by three-dimensional simulation of a full nitride-based light emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high-quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.},
doi = {10.1103/physrevb.95.144206},
journal = {Physical Review B},
number = 14,
volume = 95,
place = {United States},
year = {2017},
month = {4}
}

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Works referenced in this record:

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010


Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

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