Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Li, Chi-Kang; Piccardo, Marco; Lu, Li-Shuo; Mayboroda, Svitlana; Martinelli, Lucio; Peretti, Jacques; Speck, James S.; Weisbuch, Claude; Filoche, Marcel; Wu, Yuh-Renn

doi:10.1103/physrevb.95.144206

Title: Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Journal Article · 18 April 2017 · Physical Review. B

DOI: https://doi.org/10.1103/physrevb.95.144206 · OSTI ID:1429094

Li, Chi-Kang ^[1]; Piccardo, Marco ^[2]; Lu, Li-Shuo ^[1]; Mayboroda, Svitlana ^[3]; Martinelli, Lucio ^[2]; Peretti, Jacques ^[2]; Speck, James S. ^[4]; Weisbuch, Claude ^[5]; Filoche, Marcel ^[2]; Wu, Yuh-Renn ^[1]

National Taiwan Univ., Taipei (Taiwan). Graduate Inst. of Photonics and Optoelectronics and Dept. of Electrical Engineering
Univ. Paris-Saclay, Ecole Polytechnique, Palaiseau (France). Lab. of Condensed Matter Physics
Univ. of Minnesota, Minneapolis, MN (United States). School of Mathematics
Univ. of California, Santa Barbara, CA (United States). Dept. of Materials
Univ. Paris-Saclay, Ecole Polytechnique, Palaiseau (France). Lab. of Condensed Matter Physics; Univ. of California, Santa Barbara, CA (United States). Dept. of Materials

In this paper we introduce a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition, they lead to percolative transport through paths of minimal energy in the two-dimensional (2D) landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schrödinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room temperature. The current-voltage characteristics modeled by three-dimensional simulation of a full nitride-based light emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high-quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Buildings and Industry. Building Technologies Office; Ministry of Science and Technology (MOST), Taipei (Taiwan); French National Research Agency (ANR); National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Contributing Organization:: Ecole Polytechnique Paris National Taiwan University

Grant/Contract Number:: EE0007096; 104-2923-E-002-004-MY3; 105-2221-E-002-098-MY3; ANR-14-CE05-0048-01

OSTI ID:: 1429094

Alternate ID(s):: OSTI ID: 1352105; OSTI ID: 1635237

Journal Information:: Physical Review. B, Vol. 95, Issue 14; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (61)

Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs Li, Chi-Kang; Rosmeulen, Maarten; Simoen, Eddy IEEE Transactions on Electron Devices, Vol. 61, Issue 2 https://doi.org/10.1109/TED.2013.2294534	journal	February 2014
Electronic Transport in Mesoscopic Systems Datta, Supriyo Cambridge University Press https://doi.org/10.1017/CBO9780511805776	book	January 2013
Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH ₃ molecular beam epitaxy Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn Journal of Applied Physics, Vol. 117, Issue 18 https://doi.org/10.1063/1.4919750	journal	May 2015
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes Zhang, M.; Bhattacharya, P.; Singh, J. Applied Physics Letters, Vol. 95, Issue 20 https://doi.org/10.1063/1.3266520	journal	November 2009
PARDISO: a high-performance serial and parallel sparse linear solver in semiconductor device simulation Schenk, Olaf; Gärtner, Klaus; Fichtner, Wolfgang Future Generation Computer Systems, Vol. 18, Issue 1 https://doi.org/10.1016/S0167-739X(00)00076-5	journal	September 2001
Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling David, Aurelien; Hurni, Christophe A.; Young, Nathan G. Applied Physics Letters, Vol. 109, Issue 8 https://doi.org/10.1063/1.4961491	journal	August 2016
Atom probe tomography assessment of the impact of electron beam exposure on In _x Ga _1−x N/GaN quantum wells Bennett, Samantha E.; Saxey, David W.; Kappers, Menno J. Applied Physics Letters, Vol. 99, Issue 2 https://doi.org/10.1063/1.3610468	journal	July 2011
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers Piccardo, Marco; Li, Chi-Kang; Wu, Yuh-Renn Physical Review B, Vol. 95, Issue 14 https://doi.org/10.1103/PhysRevB.95.144205	journal	April 2017
Efficiency droop in nitride-based light-emitting diodes Piprek, Joachim physica status solidi (a), Vol. 207, Issue 10, p. 2217-2225 https://doi.org/10.1002/pssa.201026149	journal	July 2010
Localization landscape theory of disorder in semiconductors. I. Theory and modeling Filoche, Marcel; Piccardo, Marco; Wu, Yuh-Renn Physical Review B, Vol. 95, Issue 14 https://doi.org/10.1103/PhysRevB.95.144204	journal	April 2017
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells Schulz, Stefan; Caro, Miguel A.; Coughlan, Conor Physical Review B, Vol. 91, Issue 3 https://doi.org/10.1103/PhysRevB.91.035439	journal	January 2015
Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method: InGaN quantum well LED simulation using NEGF Shedbalkar, Akshay; Andreev, Zhelio; Witzigmann, Bernd physica status solidi (b), Vol. 253, Issue 1 https://doi.org/10.1002/pssb.201552276	journal	November 2015
Absence of Diffusion in Certain Random Lattices Anderson, P. W. Physical Review, Vol. 109, Issue 5 https://doi.org/10.1103/PhysRev.109.1492	journal	March 1958
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S. Journal of Applied Physics, Vol. 116, Issue 11 https://doi.org/10.1063/1.4896103	journal	September 2014
Effective Confining Potential of Quantum States in Disordered Media Arnold, Douglas N.; David, Guy; Jerison, David Physical Review Letters, Vol. 116, Issue 5 https://doi.org/10.1103/PhysRevLett.116.056602	journal	February 2016
High-Power GaN P-N Junction Blue-Light-Emitting Diodes Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 30, Issue Part 2, No. 12A https://doi.org/10.1143/JJAP.30.L1998	journal	December 1991
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography Shivaraman, Ravi; Kawaguchi, Y.; Tanaka, S. Applied Physics Letters, Vol. 102, Issue 25 https://doi.org/10.1063/1.4812363	journal	June 2013
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes Mukai, Takashi; Yamada, Motokazu; Nakamura, Shuji Japanese Journal of Applied Physics, Vol. 38, Issue Part 1, No. 7A https://doi.org/10.1143/JJAP.38.3976	journal	July 1999
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
First-principles calculations of indirect Auger recombination in nitride semiconductors Kioupakis, Emmanouil; Steiauf, Daniel; Rinke, Patrick Physical Review B, Vol. 92, Issue 3 https://doi.org/10.1103/PhysRevB.92.035207	journal	July 2015
Percolation transport study in nitride based LED by considering the random alloy fluctuation Wu, Chen-Kuo; Li, Chi-Kang; Wu, Yuh-Renn Journal of Computational Electronics, Vol. 14, Issue 2 https://doi.org/10.1007/s10825-015-0688-y	journal	March 2015
The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes Vaxenburg, Roman; Rodina, Anna; Lifshitz, Efrat Applied Physics Letters, Vol. 103, Issue 22 https://doi.org/10.1063/1.4833915	journal	November 2013
Characterization of a dielectric/GaN system using atom probe tomography Mazumder, Baishakhi; Esposto, Michele; Hung, Ting H. Applied Physics Letters, Vol. 103, Issue 15 https://doi.org/10.1063/1.4824211	journal	October 2013
Efficiency Drop in Green InGaN / GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele Physical Review Letters, Vol. 116, Issue 2 https://doi.org/10.1103/PhysRevLett.116.027401	journal	January 2016
Role of defects in the thermal droop of InGaN-based light emitting diodes De Santi, C.; Meneghini, M.; La Grassa, M. Journal of Applied Physics, Vol. 119, Issue 9 https://doi.org/10.1063/1.4942438	journal	March 2016
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung Applied Physics Letters, Vol. 101, Issue 8 https://doi.org/10.1063/1.4747532	journal	August 2012
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence Kumakura, K.; Makimoto, T.; Kobayashi, N. Applied Physics Letters, Vol. 86, Issue 5 https://doi.org/10.1063/1.1861116	journal	January 2005
On the reliable analysis of indium mole fraction within In _x Ga _1−x N quantum wells using atom probe tomography Riley, James R.; Detchprohm, Theeradetch; Wetzel, Christian Applied Physics Letters, Vol. 104, Issue 15 https://doi.org/10.1063/1.4871510	journal	April 2014
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics Sah, Chih-tang; Noyce, Robert; Shockley, William Proceedings of the IRE, Vol. 45, Issue 9 https://doi.org/10.1109/JRPROC.1957.278528	journal	September 1957
Universal mechanism for Anderson and weak localization Filoche, M.; Mayboroda, S. Proceedings of the National Academy of Sciences, Vol. 109, Issue 37 https://doi.org/10.1073/pnas.1120432109	journal	August 2012
Modeling of III-nitride light-emitting diodes: progress, problems, and perspectives Karpov, Sergey Yu. SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.872842	conference	February 2011
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures Fiorentini, Vincenzo; Bernardini, Fabio; Ambacher, Oliver Applied Physics Letters, Vol. 80, Issue 7 https://doi.org/10.1063/1.1448668	journal	February 2002
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop Iveland, Justin; Martinelli, Lucio; Peretti, Jacques Physical Review Letters, Vol. 110, Issue 17 https://doi.org/10.1103/PhysRevLett.110.177406	journal	April 2013
Gmsh: A 3-D finite element mesh generator with built-in pre- and post-processing facilities Geuzaine, Christophe; Remacle, Jean-François International Journal for Numerical Methods in Engineering, Vol. 79, Issue 11 https://doi.org/10.1002/nme.2579	journal	September 2009
3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits Li, Chi-Kang; Wu, Chen-Kuo; Hsu, Chung-Cheng AIP Advances, Vol. 6, Issue 5 https://doi.org/10.1063/1.4950771	journal	May 2016
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3330870	journal	March 2010
The efficiency challenge of nitride light-emitting diodes for lighting: The efficiency challenge of nitride LEDs for lighting Weisbuch, Claude; Piccardo, Marco; Martinelli, Lucio physica status solidi (a), Vol. 212, Issue 5 https://doi.org/10.1002/pssa.201431868	journal	March 2015
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells Ni, Xianfeng; Fan, Qian; Shimada, Ryoko Applied Physics Letters, Vol. 93, Issue 17 https://doi.org/10.1063/1.3012388	journal	October 2008
White light emitting diodes with super-high luminous efficacy Narukawa, Yukio; Ichikawa, Masatsugu; Sanga, Daisuke Journal of Physics D: Applied Physics, Vol. 43, Issue 35 https://doi.org/10.1088/0022-3727/43/35/354002	journal	August 2010
Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence Binder, M.; Nirschl, A.; Zeisel, R. Applied Physics Letters, Vol. 103, Issue 7 https://doi.org/10.1063/1.4818761	journal	August 2013
Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 97, Issue 3 https://doi.org/10.1063/1.3462916	journal	July 2010
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs Pengelly, Raymond S.; Wood, Simon M.; Milligan, James W. IEEE Transactions on Microwave Theory and Techniques, Vol. 60, Issue 6 https://doi.org/10.1109/TMTT.2012.2187535	journal	June 2012
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel New Journal of Physics, Vol. 15, Issue 12 https://doi.org/10.1088/1367-2630/15/12/125006	journal	December 2013
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N. Applied Physics Letters, Vol. 94, Issue 8 https://doi.org/10.1063/1.3089687	journal	February 2009
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Strain-induced polarization in wurtzite III-nitride semipolar layers Romanov, A. E.; Baker, T. J.; Nakamura, S. Journal of Applied Physics, Vol. 100, Issue 2 https://doi.org/10.1063/1.2218385	journal	July 2006
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes David, Aurélien; Grundmann, Michael J.; Kaeding, John F. Applied Physics Letters, Vol. 92, Issue 5 https://doi.org/10.1063/1.2839305	journal	February 2008
Alloy effects in Ga1−xInxN/GaN heterostructures Nguyen, Duc-Phuong; Regnault, N.; Ferreira, R. Solid State Communications, Vol. 130, Issue 11 https://doi.org/10.1016/j.ssc.2004.03.048	journal	June 2004
Ballistic transport in InGaN-based LEDs: impact on efficiency Özgür, Ü; Ni, X.; Li, X. Semiconductor Science and Technology, Vol. 26, Issue 1 https://doi.org/10.1088/0268-1242/26/1/014022	journal	November 2010
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures Ambacher, O.; Majewski, J.; Miskys, C. Journal of Physics: Condensed Matter, Vol. 14, Issue 13 https://doi.org/10.1088/0953-8984/14/13/302	journal	March 2002
Carrier localization mechanisms in In x Ga 1 − x N/GaN quantum wells Watson-Parris, D.; Godfrey, M. J.; Dawson, P. Physical Review B, Vol. 83, Issue 11 https://doi.org/10.1103/PhysRevB.83.115321	journal	March 2011
Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy Fireman, Micha N.; Browne, David A.; Mishra, Umesh K. Journal of Applied Physics, Vol. 119, Issue 5 https://doi.org/10.1063/1.4941323	journal	February 2016
Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes Binder, M.; Galler, B.; Furitsch, M. Applied Physics Letters, Vol. 103, Issue 22 https://doi.org/10.1063/1.4833895	journal	November 2013
Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers Chen, J. -R.; Ling, S. -C.; Huang, H. -M. Applied Physics B, Vol. 95, Issue 1 https://doi.org/10.1007/s00340-008-3331-9	journal	December 2008
Droop in III-nitrides: Comparison of bulk and injection contributions David, Aurélien; Gardner, Nathan F. Applied Physics Letters, Vol. 97, Issue 19 https://doi.org/10.1063/1.3515851	journal	November 2010
Cell polarisation in a bulk-surface model can be driven by both classic and non-classic Turing instability Borgqvist, Johannes; Malik, Adam; Lundholm, Carl npj Systems Biology and Applications, Vol. 7, Issue 1 https://doi.org/10.1038/s41540-021-00173-x	journal	February 2021
Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence Binder, M.; Nirschl, A.; Zeisel, R. Universität Regensburg https://doi.org/10.5283/epub.28841	text	January 2013
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop Iveland, Justin; Martinelli, Lucio; Peretti, Jacques arXiv https://doi.org/10.48550/arxiv.1304.5469	text	January 2013
Effective confining potential of quantum states in disordered media Arnold, Douglas N.; David, Guy; Jerison, David arXiv https://doi.org/10.48550/arxiv.1505.02684	text	January 2015
Localization landscape theory of disorder in semiconductors I: Theory and modeling Filoche, Marcel; Piccardo, Marco; Wu, Yuh-Renn arXiv https://doi.org/10.48550/arxiv.1704.05512	text	January 2017

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71 CLASSICAL AND QUANTUM MECHANICS
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disordered alloys
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