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Title: Phase Segregation Behavior of Two-Dimensional Transition Metal Dichalcogenide Binary Alloys Induced by Dissimilar Substitution

Transition metal dichalcogenide (TMD) alloys form a broad class of two-dimensional (2D) layered materials with tunable bandgaps leading to interesting optoelectronic applications. In the bottom-up approach of building these atomically thin materials, atomic doping plays a crucial role. Here we demonstrate a single step CVD (chemical vapor deposition) growth procedure for obtaining binary alloys and heterostructures by tuning atomic composition. We show that a minute doping of tin during the growth phase of the Mo 1–xW xS 2 alloy system leads to formation of lateral and vertical heterostructure growth. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging and density functional theory (DFT) calculations also support the modified stacking and growth mechanism due to the nonisomorphous Sn substitution. Our experiments demonstrate the possibility of growing heterostructures of TMD alloys whose spectral responses can be desirably tuned for various optoelectronic applications.
Authors:
 [1] ; ORCiD logo [1] ;  [1] ;  [2] ;  [2] ; ORCiD logo [1] ;  [1] ;  [1] ;  [1]
  1. Rice Univ., Houston, TX (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 17; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1427675

Susarla, Sandhya, Kochat, Vidya, Kutana, Alex, Hachtel, Jordan A., Idrobo, Juan Carlos, Vajtai, Robert, Yakobson, Boris I., Tiwary, Chandra Sekhar, and Ajayan, Pulickel M.. Phase Segregation Behavior of Two-Dimensional Transition Metal Dichalcogenide Binary Alloys Induced by Dissimilar Substitution. United States: N. p., Web. doi:10.1021/acs.chemmater.7b02407.
Susarla, Sandhya, Kochat, Vidya, Kutana, Alex, Hachtel, Jordan A., Idrobo, Juan Carlos, Vajtai, Robert, Yakobson, Boris I., Tiwary, Chandra Sekhar, & Ajayan, Pulickel M.. Phase Segregation Behavior of Two-Dimensional Transition Metal Dichalcogenide Binary Alloys Induced by Dissimilar Substitution. United States. doi:10.1021/acs.chemmater.7b02407.
Susarla, Sandhya, Kochat, Vidya, Kutana, Alex, Hachtel, Jordan A., Idrobo, Juan Carlos, Vajtai, Robert, Yakobson, Boris I., Tiwary, Chandra Sekhar, and Ajayan, Pulickel M.. 2017. "Phase Segregation Behavior of Two-Dimensional Transition Metal Dichalcogenide Binary Alloys Induced by Dissimilar Substitution". United States. doi:10.1021/acs.chemmater.7b02407. https://www.osti.gov/servlets/purl/1427675.
@article{osti_1427675,
title = {Phase Segregation Behavior of Two-Dimensional Transition Metal Dichalcogenide Binary Alloys Induced by Dissimilar Substitution},
author = {Susarla, Sandhya and Kochat, Vidya and Kutana, Alex and Hachtel, Jordan A. and Idrobo, Juan Carlos and Vajtai, Robert and Yakobson, Boris I. and Tiwary, Chandra Sekhar and Ajayan, Pulickel M.},
abstractNote = {Transition metal dichalcogenide (TMD) alloys form a broad class of two-dimensional (2D) layered materials with tunable bandgaps leading to interesting optoelectronic applications. In the bottom-up approach of building these atomically thin materials, atomic doping plays a crucial role. Here we demonstrate a single step CVD (chemical vapor deposition) growth procedure for obtaining binary alloys and heterostructures by tuning atomic composition. We show that a minute doping of tin during the growth phase of the Mo1–xWxS2 alloy system leads to formation of lateral and vertical heterostructure growth. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging and density functional theory (DFT) calculations also support the modified stacking and growth mechanism due to the nonisomorphous Sn substitution. Our experiments demonstrate the possibility of growing heterostructures of TMD alloys whose spectral responses can be desirably tuned for various optoelectronic applications.},
doi = {10.1021/acs.chemmater.7b02407},
journal = {Chemistry of Materials},
number = 17,
volume = 29,
place = {United States},
year = {2017},
month = {8}
}