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Title: Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

Journal Article · · Reports on Progress in Physics
 [1];  [2];  [3];  [4]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). The Center for Nanophase Materials Sciences
  2. Sungkyunkwan Univ., Suwon (Korea, Republic of). School of Advanced Materials Science and Engineering
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  4. National Academy of Sciences of Ukraine, Kyiv (Ukraine). Inst. of Physics

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this paper, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. Finally, we also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Sungkyunkwan Univ., Suwon (Korea, Republic of)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation of Korea (NRF); Ministry of Science, ICT and Future Planning (MSIP) of Korea
Grant/Contract Number:
AC02-06CH11357; AC05-00OR22725; 2014R1A4A1008474
OSTI ID:
1427506
Journal Information:
Reports on Progress in Physics, Vol. 81, Issue 3; ISSN 0034-4885
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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Recent Advances in Electromechanical Imaging on the Nanometer Scale: Polarization Dynamics in Ferroelectrics, Biopolymers, and Liquid Imaging journal September 2007
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Scanning force microscopy of ferroelectric crystals journal September 1996
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Surface States and Rectification at a Metal Semi-Conductor Contact journal May 1947
Atomic Force Microscope Observation of Ferroelectrics: Barium Titanate and Rochelle Salt journal September 1996
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Properties of solid state devices with mobile ionic defects. Part I: The effects of motion, space charge and contact potential in metal|semiconductor|metal devices journal January 2007
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Kelvin Probe Force Microscopy book January 2012
Memristor-The missing circuit element journal January 1971
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Selective adsorption of contaminants on Pb(Zr,Ti)O 3 surfaces shown by X-ray photoelectron spectroscopy journal January 2014
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Local Elasticity Response in Ferroelectric Crystals Studied by Afm-Based Novel Probe Techniques journal September 2005
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