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Title: Bi-enhanced N incorporation in GaAsNBi alloys

We have examined the influence of bismuth (Bi) and nitrogen (N) fluxes on N and Bi incorporation during molecular-beam epitaxy of GaAs 1-x-yN xBi y alloys. The incorporation of Bi is found to be independent of N flux, while the total N incorporation and the fraction of N atoms occupying non-substitutional lattice sites increase with increasing Bi flux. A comparison of channeling nuclear reaction analysis along the [100], [110], and [111] directions with Monte Carlo-Molecular Dynamics simulations indicates that the non-substitutional N primarily incorporate as (N-As) As interstitial complexes. We discuss the influence of Bi adatoms on the formation of arsenic-terminated [110]-oriented step-edges and the resulting enhancement in total N incorporation via the formation of additional (N-As) As.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [2] ;  [3] ; ORCiD logo [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Alfred Univ., NY (United States)
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Report Number(s):
LA-UR-18-21407
Journal ID: ISSN 0003-6951
Grant/Contract Number:
AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 24; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science
OSTI Identifier:
1427392

Occena, J., Jen, T., Rizzi, E. E., Johnson, T. M., Horwath, J., Wang, Y. Q., and Goldman, R. S.. Bi-enhanced N incorporation in GaAsNBi alloys. United States: N. p., Web. doi:10.1063/1.4984227.
Occena, J., Jen, T., Rizzi, E. E., Johnson, T. M., Horwath, J., Wang, Y. Q., & Goldman, R. S.. Bi-enhanced N incorporation in GaAsNBi alloys. United States. doi:10.1063/1.4984227.
Occena, J., Jen, T., Rizzi, E. E., Johnson, T. M., Horwath, J., Wang, Y. Q., and Goldman, R. S.. 2017. "Bi-enhanced N incorporation in GaAsNBi alloys". United States. doi:10.1063/1.4984227. https://www.osti.gov/servlets/purl/1427392.
@article{osti_1427392,
title = {Bi-enhanced N incorporation in GaAsNBi alloys},
author = {Occena, J. and Jen, T. and Rizzi, E. E. and Johnson, T. M. and Horwath, J. and Wang, Y. Q. and Goldman, R. S.},
abstractNote = {We have examined the influence of bismuth (Bi) and nitrogen (N) fluxes on N and Bi incorporation during molecular-beam epitaxy of GaAs1-x-yNxBiy alloys. The incorporation of Bi is found to be independent of N flux, while the total N incorporation and the fraction of N atoms occupying non-substitutional lattice sites increase with increasing Bi flux. A comparison of channeling nuclear reaction analysis along the [100], [110], and [111] directions with Monte Carlo-Molecular Dynamics simulations indicates that the non-substitutional N primarily incorporate as (N-As)As interstitial complexes. We discuss the influence of Bi adatoms on the formation of arsenic-terminated [110]-oriented step-edges and the resulting enhancement in total N incorporation via the formation of additional (N-As)As.},
doi = {10.1063/1.4984227},
journal = {Applied Physics Letters},
number = 24,
volume = 110,
place = {United States},
year = {2017},
month = {6}
}