Bi-enhanced N incorporation in GaAsNBi alloys

Occena, J.; Jen, T.; Rizzi, E. E.; Johnson, T. M.; Horwath, J.; Wang, Y. Q.; Goldman, R. S.

doi:10.1063/1.4984227

Title: Bi-enhanced N incorporation in GaAsNBi alloys

Abstract

We have examined the influence of bismuth (Bi) and nitrogen (N) fluxes on N and Bi incorporation during molecular-beam epitaxy of GaAs_1-x-yN_xBi_y alloys. The incorporation of Bi is found to be independent of N flux, while the total N incorporation and the fraction of N atoms occupying non-substitutional lattice sites increase with increasing Bi flux. A comparison of channeling nuclear reaction analysis along the [100], [110], and [111] directions with Monte Carlo-Molecular Dynamics simulations indicates that the non-substitutional N primarily incorporate as (N-As)_As interstitial complexes. We discuss the influence of Bi adatoms on the formation of arsenic-terminated [110]-oriented step-edges and the resulting enhancement in total N incorporation via the formation of additional (N-As)_As.

Authors:

^[1];

^[1]; Rizzi, E. E. ^[1]; Johnson, T. M. ^[1]; Horwath, J. ^[2]; Wang, Y. Q. ^[3];

^[1]

Univ. of Michigan, Ann Arbor, MI (United States)
Alfred Univ., NY (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Publication Date:: Mon Jun 12 00:00:00 EDT 2017

Research Org.:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)

OSTI Identifier:: 1427392

Report Number(s):: LA-UR-18-21407
Journal ID: ISSN 0003-6951; TRN: US1802856

Grant/Contract Number:: AC52-06NA25396

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 24; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Material Science

Citation Formats


                    Occena, J., Jen, T., Rizzi, E. E., Johnson, T. M., Horwath, J., Wang, Y. Q., and Goldman, R. S. Bi-enhanced N incorporation in GaAsNBi alloys.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4984227.

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                    Occena, J., Jen, T., Rizzi, E. E., Johnson, T. M., Horwath, J., Wang, Y. Q., & Goldman, R. S. Bi-enhanced N incorporation in GaAsNBi alloys.  United States.  https://doi.org/10.1063/1.4984227

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                    Occena, J., Jen, T., Rizzi, E. E., Johnson, T. M., Horwath, J., Wang, Y. Q., and Goldman, R. S. Mon .  
"Bi-enhanced N incorporation in GaAsNBi alloys".  United States.  https://doi.org/10.1063/1.4984227.  https://www.osti.gov/servlets/purl/1427392.

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@article{osti_1427392,

  title        = {Bi-enhanced N incorporation in GaAsNBi alloys},

  author       = {Occena, J. and Jen, T. and Rizzi, E. E. and Johnson, T. M. and Horwath, J. and Wang, Y. Q. and Goldman, R. S.},

  abstractNote = {We have examined the influence of bismuth (Bi) and nitrogen (N) fluxes on N and Bi incorporation during molecular-beam epitaxy of GaAs1-x-yNxBiy alloys. The incorporation of Bi is found to be independent of N flux, while the total N incorporation and the fraction of N atoms occupying non-substitutional lattice sites increase with increasing Bi flux. A comparison of channeling nuclear reaction analysis along the [100], [110], and [111] directions with Monte Carlo-Molecular Dynamics simulations indicates that the non-substitutional N primarily incorporate as (N-As)As interstitial complexes. We discuss the influence of Bi adatoms on the formation of arsenic-terminated [110]-oriented step-edges and the resulting enhancement in total N incorporation via the formation of additional (N-As)As.},

  doi          = {10.1063/1.4984227},

  journal      = {Applied Physics Letters},

  number       = 24,

  volume       = 110,

  place        = {United States},

  year         = {Mon Jun 12 00:00:00 EDT 2017},

  month        = {Mon Jun 12 00:00:00 EDT 2017}

}

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Works referencing / citing this record:

Surfactant-induced chemical ordering of GaAsN:Bi
journal, November 2018

Occena, J.; Jen, T.; Lu, H.
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Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
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Title: Bi-enhanced N incorporation in GaAsNBi alloys

Abstract

Citation Formats

Atomic and electronic structures of N interstitials in GaAs journal, July 2005

N incorporation and associated localized vibrational modes in GaSb journal, January 2014

Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy journal, June 2014

Mechanisms of GaAsN growth: Surface and step-edge diffusion journal, April 2007

Growth on (001) and vicinal (001) GaAs surfaces in a combined scanning tunneling microscope/molecular-beam epitaxy system journal, March 1991

Local structure of indium in quinary (InGa)(AsSbN)/GaAs quantum wells journal, September 2010

Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys journal, December 2016

Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen journal, July 2000

Bismuth surfactant growth of the dilute nitride GaNxAs1−x journal, June 2005

Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy journal, June 2007

Identifying the dominant interstitial complex in dilute GaAsN alloys journal, November 2015

Surfactant enhanced growth of GaNAs and InGaNAs using bismuth journal, April 2003

Effects of nitrogen incorporation in InSb1−xNx grown using radio frequency plasma-assisted molecular beam epitaxy journal, February 2007

Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy journal, August 2012

Evolution of structural properties and formation of N-N split interstitials in GaAs 1 − x N x alloys journal, April 2005

Nitrogen Solubility and Induced Defect Complexes in Epitaxial GaAs:N journal, February 2001

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Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy journal, March 2011

Computer simulation of ion beam analysis: Possibilities and limitations journal, December 2011

Nitrogen interstitial defects in GaAs journal, May 2008

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis journal, January 2004

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Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs journal, February 2002

Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs journal, March 2002

Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloysystem journal, April 2013

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells journal, January 2012

Molecular beam epitaxy growth of GaAs1−xBix journal, April 2003

X-ray reciprocal space mapping of strain relaxation in GaAs1−xNx on GaAs [100] by molecular-beam epitaxy journal, September 2003

Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy journal, July 2001

Mechanisms of nitrogen incorporation in GaAsN alloys journal, September 2004

Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments journal, March 1998

How much room for Bi Ga heteroantisites in GaAs 1− x Bi x ? journal, October 2011

Nitrogen Solubility and Induced Defect Complexes in Epitaxial GaAs:N text, January 2001

Surfactant-induced chemical ordering of GaAsN:Bi journal, November 2018

Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys journal, August 2019

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys journal, August 2019

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers journal, August 2019

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Growth on (001) and vicinal (001) GaAs surfaces in a combined scanning tunneling microscope/molecular-beam epitaxy system
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Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
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Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs
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Molecular beam epitaxy growth of GaAs1−xBix
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