skip to main content


Title: Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiO 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.
 [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [1] ;  [1]
  1. Chinese Academy of Sciences (CAS), Shanghai (China)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. City Univ. of Hong Kong (China)
  4. Fudan Univ., Shanghai (China)
Publication Date:
Report Number(s):
Journal ID: ISSN 1613-6810
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Additional Journal Information:
Journal Volume: 13; Journal Issue: 28; Journal ID: ISSN 1613-6810
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; Material Science
OSTI Identifier: