Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization
Abstract
Abstract We investigated the potential‐induced degradation (PID) shunting mechanism in multicrystalline‐silicon photovoltaic modules by using a multiscale, multitechnique characterization approach. Both field‐stressed modules and laboratory‐stressed mini modules were studied. We used photoluminescence, electroluminescence, and dark lock‐in thermography imaging to identify degraded areas at the module scale. Small samples were then removed from degraded areas, laser marked, and imaged by scanning electron microscopy. We used simultaneous electron‐beam induced current imaging and focused ion beam milling to mark around PID shunts for chemical analysis by time‐of‐flight secondary‐ion mass spectrometry or to isolate individual shunt defects for transmission electron microscopy and atom‐probe tomography analysis. By spanning a range of 10 orders of magnitude in size, this approach enabled us to investigate the root‐cause mechanisms for PID shunting. We observed a direct correlation between recombination active shunts and sodium content. The sodium content in shunted areas peaks at the SiN X /Si interface and is consistently observed at a concentration of 0.1% to 2% in shunted areas. Analysis of samples subjected to PID recovery, either activated by electron beam or thermal effects only, reveals that recovery of isolated shunts correlates with diffusion of sodium out of the structural defects to the siliconmore »
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Colorado School of Mines, Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1427356
- Alternate Identifier(s):
- OSTI ID: 1436888
- Report Number(s):
- NREL/JA-5K00-70168
Journal ID: ISSN 1062-7995
- Grant/Contract Number:
- AC36-08GO28308; DE‐AC36‐08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Progress in Photovoltaics
- Additional Journal Information:
- Journal Name: Progress in Photovoltaics; Journal ID: ISSN 1062-7995
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 42 ENGINEERING; PID; TOF-SIMS; EBIC; polysilicon; reliability
Citation Formats
Harvey, Steven P., Moseley, John, Norman, Andrew, Stokes, Adam, Gorman, Brian, Hacke, Peter, Johnston, Steve, and Al-Jassim, Mowafak. Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization. United States: N. p., 2018.
Web. doi:10.1002/pip.2996.
Harvey, Steven P., Moseley, John, Norman, Andrew, Stokes, Adam, Gorman, Brian, Hacke, Peter, Johnston, Steve, & Al-Jassim, Mowafak. Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization. United States. https://doi.org/10.1002/pip.2996
Harvey, Steven P., Moseley, John, Norman, Andrew, Stokes, Adam, Gorman, Brian, Hacke, Peter, Johnston, Steve, and Al-Jassim, Mowafak. Tue .
"Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization". United States. https://doi.org/10.1002/pip.2996. https://www.osti.gov/servlets/purl/1427356.
@article{osti_1427356,
title = {Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization},
author = {Harvey, Steven P. and Moseley, John and Norman, Andrew and Stokes, Adam and Gorman, Brian and Hacke, Peter and Johnston, Steve and Al-Jassim, Mowafak},
abstractNote = {Abstract We investigated the potential‐induced degradation (PID) shunting mechanism in multicrystalline‐silicon photovoltaic modules by using a multiscale, multitechnique characterization approach. Both field‐stressed modules and laboratory‐stressed mini modules were studied. We used photoluminescence, electroluminescence, and dark lock‐in thermography imaging to identify degraded areas at the module scale. Small samples were then removed from degraded areas, laser marked, and imaged by scanning electron microscopy. We used simultaneous electron‐beam induced current imaging and focused ion beam milling to mark around PID shunts for chemical analysis by time‐of‐flight secondary‐ion mass spectrometry or to isolate individual shunt defects for transmission electron microscopy and atom‐probe tomography analysis. By spanning a range of 10 orders of magnitude in size, this approach enabled us to investigate the root‐cause mechanisms for PID shunting. We observed a direct correlation between recombination active shunts and sodium content. The sodium content in shunted areas peaks at the SiN X /Si interface and is consistently observed at a concentration of 0.1% to 2% in shunted areas. Analysis of samples subjected to PID recovery, either activated by electron beam or thermal effects only, reveals that recovery of isolated shunts correlates with diffusion of sodium out of the structural defects to the silicon surface. We observed the role of oxygen and chlorine in PID shunting and found that those species—although sometimes present in structural defects where PID shunting was observed—do not play a consistent role in PID shunting.},
doi = {10.1002/pip.2996},
journal = {Progress in Photovoltaics},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 27 00:00:00 EST 2018},
month = {Tue Feb 27 00:00:00 EST 2018}
}
Web of Science
Figures / Tables:
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Works referencing / citing this record:
Non-destructive approach for severity investigation of shunts in crystalline silicon photovoltaic modules by combination of electroluminescence imaging and lock-in thermography
journal, February 2019
- Roy, Subinoy; Gupta, Rajesh
- Measurement Science and Technology, Vol. 30, Issue 4
Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant
journal, October 2018
- Huang, Jingsheng; Li, Hongtao; Sun, Yaojie
- International Journal of Photoenergy, Vol. 2018
Figures / Tables found in this record: