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Title: Fabrication of ultrathin film capacitors by chemical solution deposition

Abstract

We present that a facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ≥1 mm2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Furthermore, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nm but are still macroscopically addressable with specific capacitance values >160 nF/mm2.

Authors:
 [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1426946
Report Number(s):
SAND-2007-1882J
Journal ID: ISSN 0884-2914; applab; 526863
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 22; Journal Issue: 10; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Brennecka, Geoff L., and Tuttle, Bruce A. Fabrication of ultrathin film capacitors by chemical solution deposition. United States: N. p., 2007. Web. doi:10.1557/JMR.2007.0371.
Brennecka, Geoff L., & Tuttle, Bruce A. Fabrication of ultrathin film capacitors by chemical solution deposition. United States. doi:10.1557/JMR.2007.0371.
Brennecka, Geoff L., and Tuttle, Bruce A. Mon . "Fabrication of ultrathin film capacitors by chemical solution deposition". United States. doi:10.1557/JMR.2007.0371. https://www.osti.gov/servlets/purl/1426946.
@article{osti_1426946,
title = {Fabrication of ultrathin film capacitors by chemical solution deposition},
author = {Brennecka, Geoff L. and Tuttle, Bruce A.},
abstractNote = {We present that a facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ≥1 mm2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Furthermore, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nm but are still macroscopically addressable with specific capacitance values >160 nF/mm2.},
doi = {10.1557/JMR.2007.0371},
journal = {Journal of Materials Research},
number = 10,
volume = 22,
place = {United States},
year = {2007},
month = {10}
}

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Cited by: 32 works
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    Works referencing / citing this record:

    Bulk-like dielectric properties from metallo-organic solution–deposited SrTiO 3 films on Pt-coated Si substrates
    journal, March 2012

    • Weiss, C. V.; Zhang, J.; Spies, M.
    • Journal of Applied Physics, Vol. 111, Issue 5
    • DOI: 10.1063/1.3692811

    Bulk-like dielectric properties from metallo-organic solution–deposited SrTiO 3 films on Pt-coated Si substrates
    journal, March 2012

    • Weiss, C. V.; Zhang, J.; Spies, M.
    • Journal of Applied Physics, Vol. 111, Issue 5
    • DOI: 10.1063/1.3692811