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Title: Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Abstract

In this work, we model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn 2+Cn 3+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10 -29 cm 6 s -1. Finally, comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [3]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Physics, Applied Physics and Astronomy and Department of Electrical, Computer, and Systems Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. R&D Institute, Samsung LED, Suwon (Korea)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1426926
Report Number(s):
SAND-2010-6136J
Journal ID: ISSN 0003-6951; 534351
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 97; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Dai, Qi, Shan, Qifeng, Wang, Jing, Chhajed, Sameer, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D., Kim, Min-Ho, and Park, Yongjo. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes. United States: N. p., 2010. Web. doi:10.1063/1.3493654.
Dai, Qi, Shan, Qifeng, Wang, Jing, Chhajed, Sameer, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D., Kim, Min-Ho, & Park, Yongjo. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes. United States. doi:10.1063/1.3493654.
Dai, Qi, Shan, Qifeng, Wang, Jing, Chhajed, Sameer, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D., Kim, Min-Ho, and Park, Yongjo. Thu . "Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes". United States. doi:10.1063/1.3493654. https://www.osti.gov/servlets/purl/1426926.
@article{osti_1426926,
title = {Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes},
author = {Dai, Qi and Shan, Qifeng and Wang, Jing and Chhajed, Sameer and Cho, Jaehee and Schubert, E. Fred and Crawford, Mary H. and Koleske, Daniel D. and Kim, Min-Ho and Park, Yongjo},
abstractNote = {In this work, we model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn2+Cn3+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10-29 cm6 s-1. Finally, comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.},
doi = {10.1063/1.3493654},
journal = {Applied Physics Letters},
number = 13,
volume = 97,
place = {United States},
year = {2010},
month = {9}
}

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