Title: Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Abstract

In this work, we model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn²+Cn³+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10^-29 cm⁶ s^-1. Finally, comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Authors:

Dai, Qi ^[1]; Shan, Qifeng ^[1]; Wang, Jing ^[1]; Chhajed, Sameer ^[1]; Cho, Jaehee ^[1]; Schubert, E. Fred ^[1]; Crawford, Mary H. ^[2]; Koleske, Daniel D. ^[2]; Kim, Min-Ho ^[3]; Park, Yongjo ^[3]

---

+ Show Author Affiliations

1. Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Physics, Applied Physics and Astronomy and Department of Electrical, Computer, and Systems Engineering
2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
3. R&D Institute, Samsung LED, Suwon (Korea)

Publication Date:

Thu Sep 30 00:00:00 EDT 2010

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:

1426926

Report Number(s):

SAND-2010-6136J
Journal ID: ISSN 0003-6951; 534351

Grant/Contract Number:  

AC04-94AL85000

Resource Type:

Accepted Manuscript

Journal Name:

Applied Physics Letters

Additional Journal Information:

Journal Volume: 97; Journal Issue: 13; Journal ID: ISSN 0003-6951

Publisher:

American Institute of Physics (AIP)

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 42 ENGINEERING