Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays

Journal Article · 03 January 2018 · Crystal Growth and Design

DOI: https://doi.org/10.1021/acs.cgd.7b01725 · OSTI ID:1426802

Golam Sarwar, A. T. M. ^[1]; Leung, Benjamin ^[2]; Wang, George T.  ^[2]; Myers, Roberto C.  ^[3]

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1. The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering
2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
3. The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering and Dept. of Materials Science and Engineering

By using multiple growth steps that separate the nucleation and growth processes, we show that nearly intrinsic InN single nanocrystals of high optical quality can be formed on patterned GaN nanowire arrays by molecular beam epitaxy. The InN nanostructures form into well-defined hexagonal prisms with pyramidal tops. Micro-photoluminescence (μ-PL) is carried out at low temperature (LT: 28.2 K) and room temperature (RT: 285 K) to gauge the relative material quality of the InN nanostructures. Nanopyramidal prisms grown using a three-step growth method are found to show superior quantum efficiency. In conclusion, excitation and temperature dependent μ-PL demonstrates the very high quality and nearly intrinsic nature of the ordered InN nanostructure arrays.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1426802
• Report Number(s): SAND--2018-2138J; 661003
• Journal Information: Crystal Growth and Design, Journal Name: Crystal Growth and Design Journal Issue: 2 Vol. 18; ISSN 1528-7483
• Publisher: American Chemical SocietyCopyright Statement
• Country of Publication: United States
• Language: English