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Title: Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface

Abstract

The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a “redistribution” of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Znterminated CZTSe absorber and Cd and S from the buffer layer form a Zn–Se–Cd–S interlayer. We find direct indications for the presence of Cd–S, Cd–Se, and Cd–Se–Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)– (Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [5];  [6];  [7];  [3];  [4];  [2]
  1. Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Berlin, Germany, Institut für Physik, Brandenburgische Technische Universität Cottbus-Senftenberg, Cottbus, Germany
  2. National Renewable Energy Laboratory (NREL), Golden, Colorado, United States
  3. Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen, Germany, Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada, United States, Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany
  4. Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Berlin, Germany
  5. Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada, United States, Engineering Physics Division, National Institute of Standards and Technology, Gaithersburg, Maryland, United States
  6. Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada, United States
  7. Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, California, United States
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin (Germany)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1374462
Alternate Identifier(s):
OSTI ID: 1390772; OSTI ID: 1426731; OSTI ID: 1508318
Report Number(s):
NREL/JA-5J00-69109
Journal ID: ISSN 2380-8195
Grant/Contract Number:  
AC02-05CH11231; AC36-08GO28308
Resource Type:
Published Article
Journal Name:
ACS Energy Letters
Additional Journal Information:
Journal Name: ACS Energy Letters Journal Volume: 2 Journal Issue: 7; Journal ID: ISSN 2380-8195
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; absorbers; buffer layers; interlayers; chemical structure

Citation Formats

Bär, Marcus, Repins, Ingrid, Weinhardt, Lothar, Alsmeier, Jan-Hendrik, Pookpanratana, Sujitra, Blum, Monika, Yang, Wanli, Heske, Clemens, Wilks, Regan G., and Noufi, Rommel. Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface. United States: N. p., 2017. Web. doi:10.1021/acsenergylett.7b00140.
Bär, Marcus, Repins, Ingrid, Weinhardt, Lothar, Alsmeier, Jan-Hendrik, Pookpanratana, Sujitra, Blum, Monika, Yang, Wanli, Heske, Clemens, Wilks, Regan G., & Noufi, Rommel. Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface. United States. https://doi.org/10.1021/acsenergylett.7b00140
Bär, Marcus, Repins, Ingrid, Weinhardt, Lothar, Alsmeier, Jan-Hendrik, Pookpanratana, Sujitra, Blum, Monika, Yang, Wanli, Heske, Clemens, Wilks, Regan G., and Noufi, Rommel. Wed . "Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface". United States. https://doi.org/10.1021/acsenergylett.7b00140.
@article{osti_1374462,
title = {Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface},
author = {Bär, Marcus and Repins, Ingrid and Weinhardt, Lothar and Alsmeier, Jan-Hendrik and Pookpanratana, Sujitra and Blum, Monika and Yang, Wanli and Heske, Clemens and Wilks, Regan G. and Noufi, Rommel},
abstractNote = {The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a “redistribution” of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Znterminated CZTSe absorber and Cd and S from the buffer layer form a Zn–Se–Cd–S interlayer. We find direct indications for the presence of Cd–S, Cd–Se, and Cd–Se–Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)– (Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.},
doi = {10.1021/acsenergylett.7b00140},
journal = {ACS Energy Letters},
number = 7,
volume = 2,
place = {United States},
year = {Wed Jun 14 00:00:00 EDT 2017},
month = {Wed Jun 14 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1021/acsenergylett.7b00140

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Cited by: 28 works
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