Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface
Abstract
The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a “redistribution” of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Znterminated CZTSe absorber and Cd and S from the buffer layer form a Zn–Se–Cd–S interlayer. We find direct indications for the presence of Cd–S, Cd–Se, and Cd–Se–Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)– (Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.
- Authors:
-
- Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Berlin, Germany, Institut für Physik, Brandenburgische Technische Universität Cottbus-Senftenberg, Cottbus, Germany
- National Renewable Energy Laboratory (NREL), Golden, Colorado, United States
- Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen, Germany, Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada, United States, Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany
- Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Berlin, Germany
- Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada, United States, Engineering Physics Division, National Institute of Standards and Technology, Gaithersburg, Maryland, United States
- Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada, United States
- Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, California, United States
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin (Germany)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1374462
- Alternate Identifier(s):
- OSTI ID: 1390772; OSTI ID: 1426731; OSTI ID: 1508318
- Report Number(s):
- NREL/JA-5J00-69109
Journal ID: ISSN 2380-8195
- Grant/Contract Number:
- AC02-05CH11231; AC36-08GO28308
- Resource Type:
- Published Article
- Journal Name:
- ACS Energy Letters
- Additional Journal Information:
- Journal Name: ACS Energy Letters Journal Volume: 2 Journal Issue: 7; Journal ID: ISSN 2380-8195
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; absorbers; buffer layers; interlayers; chemical structure
Citation Formats
Bär, Marcus, Repins, Ingrid, Weinhardt, Lothar, Alsmeier, Jan-Hendrik, Pookpanratana, Sujitra, Blum, Monika, Yang, Wanli, Heske, Clemens, Wilks, Regan G., and Noufi, Rommel. Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface. United States: N. p., 2017.
Web. doi:10.1021/acsenergylett.7b00140.
Bär, Marcus, Repins, Ingrid, Weinhardt, Lothar, Alsmeier, Jan-Hendrik, Pookpanratana, Sujitra, Blum, Monika, Yang, Wanli, Heske, Clemens, Wilks, Regan G., & Noufi, Rommel. Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface. United States. https://doi.org/10.1021/acsenergylett.7b00140
Bär, Marcus, Repins, Ingrid, Weinhardt, Lothar, Alsmeier, Jan-Hendrik, Pookpanratana, Sujitra, Blum, Monika, Yang, Wanli, Heske, Clemens, Wilks, Regan G., and Noufi, Rommel. Wed .
"Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface". United States. https://doi.org/10.1021/acsenergylett.7b00140.
@article{osti_1374462,
title = {Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface},
author = {Bär, Marcus and Repins, Ingrid and Weinhardt, Lothar and Alsmeier, Jan-Hendrik and Pookpanratana, Sujitra and Blum, Monika and Yang, Wanli and Heske, Clemens and Wilks, Regan G. and Noufi, Rommel},
abstractNote = {The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a “redistribution” of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Znterminated CZTSe absorber and Cd and S from the buffer layer form a Zn–Se–Cd–S interlayer. We find direct indications for the presence of Cd–S, Cd–Se, and Cd–Se–Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)– (Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.},
doi = {10.1021/acsenergylett.7b00140},
journal = {ACS Energy Letters},
number = 7,
volume = 2,
place = {United States},
year = {Wed Jun 14 00:00:00 EDT 2017},
month = {Wed Jun 14 00:00:00 EDT 2017}
}
https://doi.org/10.1021/acsenergylett.7b00140
Web of Science
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