Subtractive fabrication of ferroelectric thin films with precisely controlled thickness
Abstract
The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.
- Authors:
-
[1];
[1];
[2];
[1];
[1];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1426587
- Alternate Identifier(s):
- OSTI ID: 1530341
- Grant/Contract Number:
- AC05-00OR22725; W911NF-14-1-0104; DMR-1708615; DMR-1608938; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nanotechnology
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 15; Journal ID: ISSN 0957-4484
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Ievlev, Anton, Chyasnavichyus, Marius, Leonard, Donovan N., Agar, Joshua C., Velarde, Gabriel A., Martin, Lane W., Kalinin, Sergei V., Maksymovych, Petro, and Ovchinnikova, Olga S. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness. United States: N. p., 2018.
Web. doi:10.1088/1361-6528/aaac9b.
Ievlev, Anton, Chyasnavichyus, Marius, Leonard, Donovan N., Agar, Joshua C., Velarde, Gabriel A., Martin, Lane W., Kalinin, Sergei V., Maksymovych, Petro, & Ovchinnikova, Olga S. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness. United States. https://doi.org/10.1088/1361-6528/aaac9b
Ievlev, Anton, Chyasnavichyus, Marius, Leonard, Donovan N., Agar, Joshua C., Velarde, Gabriel A., Martin, Lane W., Kalinin, Sergei V., Maksymovych, Petro, and Ovchinnikova, Olga S. Thu .
"Subtractive fabrication of ferroelectric thin films with precisely controlled thickness". United States. https://doi.org/10.1088/1361-6528/aaac9b. https://www.osti.gov/servlets/purl/1426587.
@article{osti_1426587,
title = {Subtractive fabrication of ferroelectric thin films with precisely controlled thickness},
author = {Ievlev, Anton and Chyasnavichyus, Marius and Leonard, Donovan N. and Agar, Joshua C. and Velarde, Gabriel A. and Martin, Lane W. and Kalinin, Sergei V. and Maksymovych, Petro and Ovchinnikova, Olga S.},
abstractNote = {The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.},
doi = {10.1088/1361-6528/aaac9b},
journal = {Nanotechnology},
number = 15,
volume = 29,
place = {United States},
year = {Thu Feb 22 00:00:00 EST 2018},
month = {Thu Feb 22 00:00:00 EST 2018}
}
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Figure 1: Averaged mass spectrum of studied films, averaged over whole thickness of PZT and part of SRO buffer layer. (inset) 3D overlay of Ti+ (red) and Sr+ (green) spatial distribution.
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Works referencing / citing this record:
Non-conventional mechanism of ferroelectric fatigue via cation migration
journal, July 2019
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Non-conventional mechanism of ferroelectric fatigue via cation migration
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