Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

doi:10.1088/1361-6528/aaac9b

Title: Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Journal Article · 22 February 2018 · Nanotechnology

DOI: https://doi.org/10.1088/1361-6528/aaac9b · OSTI ID:1426587

^[1];

^[2]; Agar, Joshua C. ^[3]; Velarde, Gabriel A. ^[3]; Martin, Lane W. ^[4];

^[1];

^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; W911NF-14-1-0104; DMR-1708615; DMR-1608938; AC02-05CH11231

OSTI ID:: 1426587

Alternate ID(s):: OSTI ID: 1530341

Journal Information:: Nanotechnology, Vol. 29, Issue 15; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

References (34)

Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices Baibich, M. N.; Broto, J. M.; Fert, A. Physical Review Letters, Vol. 61, Issue 21 https://doi.org/10.1103/PhysRevLett.61.2472	journal	November 1988
Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films Jin, S.; Tiefel, T. H.; McCormack, M. Science, Vol. 264, Issue 5157 https://doi.org/10.1126/science.264.5157.413	journal	April 1994
Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions Moodera, J. S.; Kinder, Lisa R.; Wong, Terrilyn M. Physical Review Letters, Vol. 74, Issue 16 https://doi.org/10.1103/PhysRevLett.74.3273	journal	April 1995
Giant Magnetoresistive Effects in a Single Element Magnetic Thin Film Gregg, J. F.; Allen, W.; Ounadjela, K. Physical Review Letters, Vol. 77, Issue 8 https://doi.org/10.1103/PhysRevLett.77.1580	journal	August 1996
Ferroelectric Control of Spin Polarization Garcia, V.; Bibes, M.; Bocher, L. Science, Vol. 327, Issue 5969 https://doi.org/10.1126/science.1184028	journal	January 2010
Polarization Control of Electron Tunneling into Ferroelectric Surfaces Maksymovych, P.; Jesse, S.; Yu, P. Science, Vol. 324, Issue 5933 https://doi.org/10.1126/science.1171200	journal	June 2009
Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale Gruverman, A.; Wu, D.; Lu, H. Nano Letters, Vol. 9, Issue 10 https://doi.org/10.1021/nl901754t	journal	October 2009
Giant Electroresistance in Ferroelectric Tunnel Junctions Zhuravlev, M. Ye.; Sabirianov, R. F.; Jaswal, S. S. Physical Review Letters, Vol. 94, Issue 24 https://doi.org/10.1103/PhysRevLett.94.246802	journal	June 2005
Quantum-state engineering with Josephson-junction devices Makhlin, Yuriy; Schön, Gerd; Shnirman, Alexander Reviews of Modern Physics, Vol. 73, Issue 2 https://doi.org/10.1103/RevModPhys.73.357	journal	May 2001
Quantum phase transition from a superfluid to a Mott insulator in a gas of ultracold atoms Greiner, Markus; Mandel, Olaf; Esslinger, Tilman Nature, Vol. 415, Issue 6867 https://doi.org/10.1038/415039a	journal	January 2002
Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems Yoffe, A. D. Advances in Physics, Vol. 50, Issue 1 https://doi.org/10.1080/00018730010006608	journal	January 2001
Half-Heusler ternary compounds as new multifunctional experimental platforms for topological quantum phenomena Lin, Hsin; Wray, L. Andrew; Xia, Yuqi Nature Materials, Vol. 9, Issue 7 https://doi.org/10.1038/nmat2771	journal	May 2010
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit Zhang, Yi; He, Ke; Chang, Cui-Zu Nature Physics, Vol. 6, Issue 8 https://doi.org/10.1038/nphys1689	journal	June 2010
Atomic Layer Deposition: An Overview George, Steven M. Chemical Reviews, Vol. 110, Issue 1, p. 111-131 https://doi.org/10.1021/cr900056b	journal	January 2010
Imaging mass spectrometry McDonnell, Liam A.; Heeren, Ron M. A. Mass Spectrometry Reviews, Vol. 26, Issue 4 https://doi.org/10.1002/mas.20124	journal	January 2007
Imaging with Mass Spectrometry Pacholski, M. L.; Winograd, N. Chemical Reviews, Vol. 99, Issue 10 https://doi.org/10.1021/cr980137w	journal	October 1999
Chemical State Evolution in Ferroelectric Films during Tip-Induced Polarization and Electroresistive Switching Ievlev, Anton V.; Maksymovych, Petro; Trassin, Morgan ACS Applied Materials & Interfaces, Vol. 8, Issue 43 https://doi.org/10.1021/acsami.6b10784	journal	October 2016
Scaling of ferroelectric properties in thin films Ganpule, C. S.; Stanishevsky, A.; Su, Q. Applied Physics Letters, Vol. 75, Issue 3 https://doi.org/10.1063/1.124391	journal	July 1999
Settling the “Dead Layer” Debate in Nanoscale Capacitors Chang, Li-Wu; Alexe, Marin; Scott, James F. Advanced Materials, Vol. 21, Issue 48 https://doi.org/10.1002/adma.200901756	journal	August 2009
Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets Chang, L. W.; McMillen, M.; Morrison, F. D. Applied Physics Letters, Vol. 93, Issue 13 https://doi.org/10.1063/1.2990760	journal	September 2008
Intermittency, quasiperiodicity and chaos in probe-induced ferroelectric domain switching Ievlev, A. V.; Jesse, S.; Morozovska, A. N. Nature Physics, Vol. 10, Issue 1, p. 59-66 https://doi.org/10.1038/nphys2796	journal	November 2013
Humidity effects on tip-induced polarization switching in lithium niobate Ievlev, A. V.; Morozovska, A. N.; Shur, V. Ya. Applied Physics Letters, Vol. 104, Issue 9 https://doi.org/10.1063/1.4867979	journal	March 2014
Ionic field effect and memristive phenomena in single-point ferroelectric domain switching Ievlev, Anton V.; Morozovska, Anna N.; Eliseev, Eugene A. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5545	journal	July 2014
Ferroelectric domain inversion: The role of humidity Dahan, D.; Molotskii, M.; Rosenman, G. Applied Physics Letters, Vol. 89, Issue 15 https://doi.org/10.1063/1.2358855	journal	October 2006
Reversible Chemical Switching of a Ferroelectric Film Wang, R. V.; Fong, D. D.; Jiang, F. Physical Review Letters, Vol. 102, Issue 4 https://doi.org/10.1103/PhysRevLett.102.047601	journal	January 2009
Switching spectroscopy piezoresponse force microscopy of ferroelectric materials Jesse, Stephen; Baddorf, Arthur P.; Kalinin, Sergei V. Applied Physics Letters, Vol. 88, Issue 6 https://doi.org/10.1063/1.2172216	journal	February 2006
Shape of Local Hysteresis Loops Measured by Means of Piezoresponse Force Microscopy Ievlev, A. V.; Nikolaeva, E. V.; Shishkin, E. I. Ferroelectrics, Vol. 398, Issue 1 https://doi.org/10.1080/00150193.2010.489808	journal	June 2010
Nanoscale ferroelectrics: processing, characterization and future trends Gruverman, A.; Kholkin, A. Reports on Progress in Physics, Vol. 69, Issue 8 https://doi.org/10.1088/0034-4885/69/8/R04	journal	July 2006
Local polarization dynamics in ferroelectric materials Kalinin, Sergei V.; Morozovska, Anna N.; Chen, Long Qing Reports on Progress in Physics, Vol. 73, Issue 5, Article No. 056502 https://doi.org/10.1088/0034-4885/73/5/056502	journal	April 2010
Piezoresponse force microscopy (PFM) Soergel, Elisabeth Journal of Physics D: Applied Physics, Vol. 44, Issue 46, Article No. 464003 https://doi.org/10.1088/0022-3727/44/46/464003	journal	November 2011
Scanning force microscopy for the study of domain structure in ferroelectric thin films Gruverman, A. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 14, Issue 2 https://doi.org/10.1116/1.589143	journal	March 1996
Imaging mass spectrometry [イメージング質量分析] Nirasawa, Takashi; Kudo, Toshiji; Satoh, Takaya Japanese Journal of Pesticide Science, Vol. 42, Issue 1 https://doi.org/10.1584/jpestics.w17-51	journal	January 2017
Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale Gruverman, A.; Wu, D.; Lu, H. arXiv https://doi.org/10.48550/arxiv.0906.1521	text	January 2009
Quantum state engineering with Josephson-junction devices Makhlin, Yuriy; Schoen, Gerd; Shnirman, Alexander arXiv https://doi.org/10.48550/arxiv.cond-mat/0011269	text	January 2000

Cited By (2)

Non-conventional mechanism of ferroelectric fatigue via cation migration Ievlev, Anton V.; Kc, Santosh; Vasudevan, Rama K. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11089-w	journal	July 2019
Non-conventional mechanism of ferroelectric fatigue via cation migration Ievlev, Anton V.; Kc, Santosh; Vasudevan, Rama K. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11089-w	journal	July 2019