Subtractive fabrication of ferroelectric thin films with precisely controlled thickness
Abstract
The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.
- Authors:
-
[1];
[1];
[2];
[1];
[1];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1426587
- Alternate Identifier(s):
- OSTI ID: 1530341
- Grant/Contract Number:
- AC05-00OR22725; W911NF-14-1-0104; DMR-1708615; DMR-1608938; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nanotechnology
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 15; Journal ID: ISSN 0957-4484
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Ievlev, Anton, Chyasnavichyus, Marius, Leonard, Donovan N., Agar, Joshua C., Velarde, Gabriel A., Martin, Lane W., Kalinin, Sergei V., Maksymovych, Petro, and Ovchinnikova, Olga S.. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness. United States: N. p., 2018.
Web. doi:10.1088/1361-6528/aaac9b.
Ievlev, Anton, Chyasnavichyus, Marius, Leonard, Donovan N., Agar, Joshua C., Velarde, Gabriel A., Martin, Lane W., Kalinin, Sergei V., Maksymovych, Petro, & Ovchinnikova, Olga S.. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness. United States. https://doi.org/10.1088/1361-6528/aaac9b
Ievlev, Anton, Chyasnavichyus, Marius, Leonard, Donovan N., Agar, Joshua C., Velarde, Gabriel A., Martin, Lane W., Kalinin, Sergei V., Maksymovych, Petro, and Ovchinnikova, Olga S.. Thu .
"Subtractive fabrication of ferroelectric thin films with precisely controlled thickness". United States. https://doi.org/10.1088/1361-6528/aaac9b. https://www.osti.gov/servlets/purl/1426587.
@article{osti_1426587,
title = {Subtractive fabrication of ferroelectric thin films with precisely controlled thickness},
author = {Ievlev, Anton and Chyasnavichyus, Marius and Leonard, Donovan N. and Agar, Joshua C. and Velarde, Gabriel A. and Martin, Lane W. and Kalinin, Sergei V. and Maksymovych, Petro and Ovchinnikova, Olga S.},
abstractNote = {The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.},
doi = {10.1088/1361-6528/aaac9b},
journal = {Nanotechnology},
number = 15,
volume = 29,
place = {United States},
year = {2018},
month = {2}
}
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Figure 1: Averaged mass spectrum of studied films, averaged over whole thickness of PZT and part of SRO buffer layer. (inset) 3D overlay of Ti+ (red) and Sr+ (green) spatial distribution.
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Works referenced in this record:
Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices
journal, November 1988
- Baibich, M. N.; Broto, J. M.; Fert, A.
- Physical Review Letters, Vol. 61, Issue 21
Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films
journal, April 1994
- Jin, S.; Tiefel, T. H.; McCormack, M.
- Science, Vol. 264, Issue 5157
Stable charge storing in two-dimensional MoS 2 nanoflake floating gates for multilevel organic flash memory
journal, January 2014
- Kang, Minji; Kim, Yeong-A.; Yun, Jin-Mun
- Nanoscale, Vol. 6, Issue 21
Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
journal, April 1995
- Moodera, J. S.; Kinder, Lisa R.; Wong, Terrilyn M.
- Physical Review Letters, Vol. 74, Issue 16
Giant Magnetoresistive Effects in a Single Element Magnetic Thin Film
journal, August 1996
- Gregg, J. F.; Allen, W.; Ounadjela, K.
- Physical Review Letters, Vol. 77, Issue 8
Ferroelectric Control of Spin Polarization
journal, January 2010
- Garcia, V.; Bibes, M.; Bocher, L.
- Science, Vol. 327, Issue 5969
Polarization Control of Electron Tunneling into Ferroelectric Surfaces
journal, June 2009
- Maksymovych, P.; Jesse, S.; Yu, P.
- Science, Vol. 324, Issue 5933
Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
journal, October 2009
- Gruverman, A.; Wu, D.; Lu, H.
- Nano Letters, Vol. 9, Issue 10
Giant Electroresistance in Ferroelectric Tunnel Junctions
journal, June 2005
- Zhuravlev, M. Ye.; Sabirianov, R. F.; Jaswal, S. S.
- Physical Review Letters, Vol. 94, Issue 24
Quantum-state engineering with Josephson-junction devices
journal, May 2001
- Makhlin, Yuriy; Schön, Gerd; Shnirman, Alexander
- Reviews of Modern Physics, Vol. 73, Issue 2
Quantum phase transition from a superfluid to a Mott insulator in a gas of ultracold atoms
journal, January 2002
- Greiner, Markus; Mandel, Olaf; Esslinger, Tilman
- Nature, Vol. 415, Issue 6867
Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems
journal, January 2001
- Yoffe, A. D.
- Advances in Physics, Vol. 50, Issue 1
Half-Heusler ternary compounds as new multifunctional experimental platforms for topological quantum phenomena
journal, May 2010
- Lin, Hsin; Wray, L. Andrew; Xia, Yuqi
- Nature Materials, Vol. 9, Issue 7
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
journal, June 2010
- Zhang, Yi; He, Ke; Chang, Cui-Zu
- Nature Physics, Vol. 6, Issue 8
Atomic Layer Deposition: An Overview
journal, January 2010
- George, Steven M.
- Chemical Reviews, Vol. 110, Issue 1, p. 111-131
Imaging mass spectrometry
journal, January 2007
- McDonnell, Liam A.; Heeren, Ron M. A.
- Mass Spectrometry Reviews, Vol. 26, Issue 4
High-resolution chemical imaging with scanning ion probe SIMS
journal, May 1995
- Chabala, J. M.; Soni, K. K.; Li, J.
- International Journal of Mass Spectrometry and Ion Processes, Vol. 143
Imaging with Mass Spectrometry
journal, October 1999
- Pacholski, M. L.; Winograd, N.
- Chemical Reviews, Vol. 99, Issue 10
Chemical State Evolution in Ferroelectric Films during Tip-Induced Polarization and Electroresistive Switching
journal, October 2016
- Ievlev, Anton V.; Maksymovych, Petro; Trassin, Morgan
- ACS Applied Materials & Interfaces, Vol. 8, Issue 43
Scaling of ferroelectric properties in thin films
journal, July 1999
- Ganpule, C. S.; Stanishevsky, A.; Su, Q.
- Applied Physics Letters, Vol. 75, Issue 3
Settling the “Dead Layer” Debate in Nanoscale Capacitors
journal, August 2009
- Chang, Li-Wu; Alexe, Marin; Scott, James F.
- Advanced Materials, Vol. 21, Issue 48
Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets
journal, September 2008
- Chang, L. W.; McMillen, M.; Morrison, F. D.
- Applied Physics Letters, Vol. 93, Issue 13
Intermittency, quasiperiodicity and chaos in probe-induced ferroelectric domain switching
journal, November 2013
- Ievlev, A. V.; Jesse, S.; Morozovska, A. N.
- Nature Physics, Vol. 10, Issue 1, p. 59-66
Humidity effects on tip-induced polarization switching in lithium niobate
journal, March 2014
- Ievlev, A. V.; Morozovska, A. N.; Shur, V. Ya.
- Applied Physics Letters, Vol. 104, Issue 9
Ionic field effect and memristive phenomena in single-point ferroelectric domain switching
journal, July 2014
- Ievlev, Anton V.; Morozovska, Anna N.; Eliseev, Eugene A.
- Nature Communications, Vol. 5, Issue 1
Ferroelectric domain inversion: The role of humidity
journal, October 2006
- Dahan, D.; Molotskii, M.; Rosenman, G.
- Applied Physics Letters, Vol. 89, Issue 15
Reversible Chemical Switching of a Ferroelectric Film
journal, January 2009
- Wang, R. V.; Fong, D. D.; Jiang, F.
- Physical Review Letters, Vol. 102, Issue 4
Switching spectroscopy piezoresponse force microscopy of ferroelectric materials
journal, February 2006
- Jesse, Stephen; Baddorf, Arthur P.; Kalinin, Sergei V.
- Applied Physics Letters, Vol. 88, Issue 6
Shape of Local Hysteresis Loops Measured by Means of Piezoresponse Force Microscopy
journal, June 2010
- Ievlev, A. V.; Nikolaeva, E. V.; Shishkin, E. I.
- Ferroelectrics, Vol. 398, Issue 1
Local polarization dynamics in ferroelectric materials
journal, April 2010
- Kalinin, Sergei V.; Morozovska, Anna N.; Chen, Long Qing
- Reports on Progress in Physics, Vol. 73, Issue 5, Article No. 056502
Piezoresponse force microscopy (PFM)
journal, November 2011
- Soergel, Elisabeth
- Journal of Physics D: Applied Physics, Vol. 44, Issue 46, Article No. 464003
Scanning force microscopy for the study of domain structure in ferroelectric thin films
journal, March 1996
- Gruverman, A.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 14, Issue 2
Imaging mass spectrometry [イメージング質量分析]
journal, January 2017
- Nirasawa, Takashi; Kudo, Toshiji; Satoh, Takaya
- Japanese Journal of Pesticide Science, Vol. 42, Issue 1
Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale
text, January 2009
- Gruverman, A.; Wu, D.; Lu, H.
- arXiv
Quantum state engineering with Josephson-junction devices
text, January 2000
- Makhlin, Yuriy; Schoen, Gerd; Shnirman, Alexander
- arXiv
Works referencing / citing this record:
Non-conventional mechanism of ferroelectric fatigue via cation migration
journal, July 2019
- Ievlev, Anton V.; Kc, Santosh; Vasudevan, Rama K.
- Nature Communications, Vol. 10, Issue 1
Non-conventional mechanism of ferroelectric fatigue via cation migration
journal, July 2019
- Ievlev, Anton V.; Kc, Santosh; Vasudevan, Rama K.
- Nature Communications, Vol. 10, Issue 1
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