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Title: Tip-induced local strain on Mo S 2 / graphite detected by inelastic electron tunneling spectroscopy

Abstract

We report the detection of tip-induced local strain applied to the monolayer MoS 2 grown on a graphite substrate by scanning tunneling microscope. Monolayer MoS 2 behaves as both mechanical and tunneling barriers that prevent the tip from contacting the graphite while maintaining the tunneling current. Inelastic tunneling electron spectroscopy (IETS) is utilized to probe the phonon modes in graphite. As the tip pushes the sample, IETS reveals a continuous phonon softening in graphite, corroborated by a downward shift of the phonon energy as calculated by density-functional theory. Finally, our results demonstrate a way to apply local mechanical strain and simultaneously detect the induced change in phonon modes by unitizing IETS with two-dimensional materials as a tunneling barrier.

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computational Sciences & Engineering Division
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1426577
Alternate Identifier(s):
OSTI ID: 1423502
Grant/Contract Number:  
AC05-00OR22725; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 12; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Graphite; Strain

Citation Formats

Ko, Wonhee, Hus, Saban M., Li, Xufan, Berlijn, Tom, Nguyen, Giang D., Xiao, Kai, and Li, An-Ping. Tip-induced local strain on MoS2/graphite detected by inelastic electron tunneling spectroscopy. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.125401.
Ko, Wonhee, Hus, Saban M., Li, Xufan, Berlijn, Tom, Nguyen, Giang D., Xiao, Kai, & Li, An-Ping. Tip-induced local strain on MoS2/graphite detected by inelastic electron tunneling spectroscopy. United States. doi:10.1103/PhysRevB.97.125401.
Ko, Wonhee, Hus, Saban M., Li, Xufan, Berlijn, Tom, Nguyen, Giang D., Xiao, Kai, and Li, An-Ping. Fri . "Tip-induced local strain on MoS2/graphite detected by inelastic electron tunneling spectroscopy". United States. doi:10.1103/PhysRevB.97.125401. https://www.osti.gov/servlets/purl/1426577.
@article{osti_1426577,
title = {Tip-induced local strain on MoS2/graphite detected by inelastic electron tunneling spectroscopy},
author = {Ko, Wonhee and Hus, Saban M. and Li, Xufan and Berlijn, Tom and Nguyen, Giang D. and Xiao, Kai and Li, An-Ping},
abstractNote = {We report the detection of tip-induced local strain applied to the monolayer MoS2 grown on a graphite substrate by scanning tunneling microscope. Monolayer MoS2 behaves as both mechanical and tunneling barriers that prevent the tip from contacting the graphite while maintaining the tunneling current. Inelastic tunneling electron spectroscopy (IETS) is utilized to probe the phonon modes in graphite. As the tip pushes the sample, IETS reveals a continuous phonon softening in graphite, corroborated by a downward shift of the phonon energy as calculated by density-functional theory. Finally, our results demonstrate a way to apply local mechanical strain and simultaneously detect the induced change in phonon modes by unitizing IETS with two-dimensional materials as a tunneling barrier.},
doi = {10.1103/PhysRevB.97.125401},
journal = {Physical Review B},
number = 12,
volume = 97,
place = {United States},
year = {2018},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

Fig. 1 Fig. 1: (a) A large-scale topography image of MoS2 flake on HOPG (VB = 2.0 V, I = 50 pA). (b) Atomic resolution topography images taken on HOPG (VB = 0.5 V, I = 20 pA), and (c) monolayer MoS2 (VB = 0.7 V, I = 300 pA). (d) Amore » dI/dV spectrum taken on monolayer MoS2 with high bias set point (VB = 2.0 V, I = 20 pA). (e) dI/dV spectroscopy on monolayer MoS2 with low bias set point (VB = 0.3 V, I = 50 pA).« less

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