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Title: Controlling phase separation in vanadium dioxide thin films via substrate engineering

Abstract

© 2017 American Physical Society. The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.

Authors:
 [1];  [2];  [1];  [3];  [4];  [4];  [1];  [5];  [5];  [6];  [3];  [7];  [4];  [8];  [1]
  1. Stony Brook Univ., NY (United States). Dept. of Physics
  2. Chinese Academy of Sciences (CAS), Shanghai (China). Shanghai Inst. of Microsystem and Information Technology. State Key Lab. of Transducer Technology
  3. Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  6. Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
  7. Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering, and Dept. of Physics
  8. Chinese Academy of Sciences (CAS), Shanghai (China). Shanghai Inst. of Microsystem and Information Technology. State Key Lab. of Transducer Technology; Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States); Brookhaven National Laboratory (BNL), Upton, NY (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
OSTI Identifier:
1423692
Alternate Identifier(s):
OSTI ID: 1402110; OSTI ID: 1426462; OSTI ID: 1526496
Report Number(s):
BNL-203352-2018-JAAM
Journal ID: ISSN 2469-9950; PRBMDO; 140009; TRN: US1801832
Grant/Contract Number:  
AC02-06CH11357; SC0012704; SC0012509; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 16; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Near-field; vanadium dioxide; XRD; spectroscopy; phase-change; phase separation; substrate patterning

Citation Formats

Gilbert Corder, Stephanie N., Jiang, Jianjuan, Chen, Xinzhong, Kittiwatanakul, Salinporn, Tung, I-Cheng, Zhu, Yi, Zhang, Jiawei, Bechtel, Hans A., Martin, Michael C., Carr, G. Lawrence, Lu, Jiwei, Wolf, Stuart A., Wen, Haidan, Tao, Tiger H., and Liu, Mengkun. Controlling phase separation in vanadium dioxide thin films via substrate engineering. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.161110.
Gilbert Corder, Stephanie N., Jiang, Jianjuan, Chen, Xinzhong, Kittiwatanakul, Salinporn, Tung, I-Cheng, Zhu, Yi, Zhang, Jiawei, Bechtel, Hans A., Martin, Michael C., Carr, G. Lawrence, Lu, Jiwei, Wolf, Stuart A., Wen, Haidan, Tao, Tiger H., & Liu, Mengkun. Controlling phase separation in vanadium dioxide thin films via substrate engineering. United States. https://doi.org/10.1103/PhysRevB.96.161110
Gilbert Corder, Stephanie N., Jiang, Jianjuan, Chen, Xinzhong, Kittiwatanakul, Salinporn, Tung, I-Cheng, Zhu, Yi, Zhang, Jiawei, Bechtel, Hans A., Martin, Michael C., Carr, G. Lawrence, Lu, Jiwei, Wolf, Stuart A., Wen, Haidan, Tao, Tiger H., and Liu, Mengkun. Mon . "Controlling phase separation in vanadium dioxide thin films via substrate engineering". United States. https://doi.org/10.1103/PhysRevB.96.161110. https://www.osti.gov/servlets/purl/1423692.
@article{osti_1423692,
title = {Controlling phase separation in vanadium dioxide thin films via substrate engineering},
author = {Gilbert Corder, Stephanie N. and Jiang, Jianjuan and Chen, Xinzhong and Kittiwatanakul, Salinporn and Tung, I-Cheng and Zhu, Yi and Zhang, Jiawei and Bechtel, Hans A. and Martin, Michael C. and Carr, G. Lawrence and Lu, Jiwei and Wolf, Stuart A. and Wen, Haidan and Tao, Tiger H. and Liu, Mengkun},
abstractNote = {© 2017 American Physical Society. The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.},
doi = {10.1103/PhysRevB.96.161110},
journal = {Physical Review B},
number = 16,
volume = 96,
place = {United States},
year = {Mon Oct 23 00:00:00 EDT 2017},
month = {Mon Oct 23 00:00:00 EDT 2017}
}

Journal Article:

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Cited by: 11 works
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Figures / Tables:

Fig 1 Fig 1: Experimental Design. (a) The samples are fabricated by patterning TiO2 (110)R substrates with a focused ion beam to produce a checkerboard pattern. After patterning, a VO2 thin film (~71 nm) is grown over the substrate. The strain relief caused by the patterning of the substrate locally disrupts themore » VO2 overgrowth, producing microscopic regions of different crystallinity. (b) Schematic cross section of the VO2/TiO2 interface showing the effects of etching and structural modification. The growth on the patterned regions produces a less coherent VO2 film as different TiO2 crystal facets are exposed by etching. (c) The local electronic phase transitions of the patterned samples are investigated with imaging and broadband spectroscopic s-SNOM with ~10 nm resolution. (d) The local crystallinity and structural phase transition of the VO2 film are explored with micro-XRD with ~ 1 μm resolution.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.