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Title: Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]

Authors:
 [1] ; ORCiD logo [2] ;  [3] ; ORCiD logo [2] ;  [3]
  1. Department of Applied Physics, Stanford University, Stanford, California 94305, USA, Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
  2. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
  3. Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
Publication Date:
Grant/Contract Number:
SC0001293
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 11; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1426354

Chen, Kaifeng, Xiao, T. Patrick, Santhanam, Parthiban, Yablonovitch, Eli, and Fan, Shanhui. Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]. United States: N. p., Web. doi:10.1063/1.5023511.
Chen, Kaifeng, Xiao, T. Patrick, Santhanam, Parthiban, Yablonovitch, Eli, & Fan, Shanhui. Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]. United States. doi:10.1063/1.5023511.
Chen, Kaifeng, Xiao, T. Patrick, Santhanam, Parthiban, Yablonovitch, Eli, and Fan, Shanhui. 2018. "Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]". United States. doi:10.1063/1.5023511.
@article{osti_1426354,
title = {Response to “Comment on ‘High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell’” [J. Appl. Phys. 122 , 143104 (2017)]},
author = {Chen, Kaifeng and Xiao, T. Patrick and Santhanam, Parthiban and Yablonovitch, Eli and Fan, Shanhui},
abstractNote = {},
doi = {10.1063/1.5023511},
journal = {Journal of Applied Physics},
number = 11,
volume = 123,
place = {United States},
year = {2018},
month = {3}
}

Works referenced in this record:

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961
  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034