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Title: Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide

Abstract

Despite recent interest in amorphous ceramics for a variety of nuclear applications, many details of their structure before and after irradiation/implantation remain unknown. Here we investigated the short-range order of amorphous silicon oxycarbide (SiOC) alloys by using the atomic pair-distribution function (PDF) obtained from electron diffraction. The PDF results show that the structure of SiOC alloys are nearly unchanged after both irradiation up to 30 dpa and He implantation up to 113 at%. TEM characterization shows no sign of crystallization, He bubble or void formation, or segregation in all irradiated samples. Irradiation results in a decreased number of Si-O bonds and an increased number of Si-C and C-O bonds. This study sheds light on the design of radiation-tolerant materials that do not experience helium swelling for advanced nuclear reactor applications.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [3];  [3];  [3];  [3];  [1]
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Kyushu Inst. of Technology, Tobata (Japan)
  3. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1426206
Grant/Contract Number:  
NE0000533
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Su, Qing, Inoue, Shinsuke, Ishimaru, Manabu, Gigax, Jonathan, Wang, Tianyao, Ding, Hepeng, Demkowicz, Michael J., Shao, Lin, and Nastasi, Michael. Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide. United States: N. p., 2017. Web. doi:10.1038/s41598-017-04247-x.
Su, Qing, Inoue, Shinsuke, Ishimaru, Manabu, Gigax, Jonathan, Wang, Tianyao, Ding, Hepeng, Demkowicz, Michael J., Shao, Lin, & Nastasi, Michael. Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide. United States. doi:10.1038/s41598-017-04247-x.
Su, Qing, Inoue, Shinsuke, Ishimaru, Manabu, Gigax, Jonathan, Wang, Tianyao, Ding, Hepeng, Demkowicz, Michael J., Shao, Lin, and Nastasi, Michael. Tue . "Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide". United States. doi:10.1038/s41598-017-04247-x. https://www.osti.gov/servlets/purl/1426206.
@article{osti_1426206,
title = {Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide},
author = {Su, Qing and Inoue, Shinsuke and Ishimaru, Manabu and Gigax, Jonathan and Wang, Tianyao and Ding, Hepeng and Demkowicz, Michael J. and Shao, Lin and Nastasi, Michael},
abstractNote = {Despite recent interest in amorphous ceramics for a variety of nuclear applications, many details of their structure before and after irradiation/implantation remain unknown. Here we investigated the short-range order of amorphous silicon oxycarbide (SiOC) alloys by using the atomic pair-distribution function (PDF) obtained from electron diffraction. The PDF results show that the structure of SiOC alloys are nearly unchanged after both irradiation up to 30 dpa and He implantation up to 113 at%. TEM characterization shows no sign of crystallization, He bubble or void formation, or segregation in all irradiated samples. Irradiation results in a decreased number of Si-O bonds and an increased number of Si-C and C-O bonds. This study sheds light on the design of radiation-tolerant materials that do not experience helium swelling for advanced nuclear reactor applications.},
doi = {10.1038/s41598-017-04247-x},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {2017},
month = {6}
}

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