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Title: Integrated circuits based on conjugated polymer monolayer

It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm 2 V -1 s -1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Lastly, our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [4] ;  [3] ;  [2] ;  [2] ;  [6] ;  [7] ; ORCiD logo [2]
  1. Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany); Eindhoven Univ. of Technology (Netherlands). Molecular Materials and Nanosystems, Inst. for Complex Molecular Systems
  2. Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany)
  3. Hong Kong Univ. of Science and Technology, Clear Water Bay, Kowloon (Hong Kong). Dept. of Chemistry
  4. North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics and ORaCEL
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  6. Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany); Lodz Univ. of Technology, Lodz (Poland). Dept. of Molecular Physics, Faculty of Chemistry
  7. Delft Univ. of Technology (Netherlands). Faculty of Aerospace Engineering
Publication Date:
Grant/Contract Number:
AC02-76SF00515; AC02-05CH11231; UMO-2015/18/E/ST3/00322
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Nature Publishing Group
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); European Union (EU); National Science Centre, Poland; Alexander von Humboldt Foundation; Federal Ministry of Education and Research, Germany; National Science Foundation (NSF)
Country of Publication:
United States
36 MATERIALS SCIENCE; Electronic and spintronic devices; Electronic devices
OSTI Identifier: