Thermal imaging of high power diode lasers subject to back-irradiance

Li, C.; Pipe, K. P.; Cao, C.; Thiagarajan, P.; Deri, R. J.; Leisher, P. O.

doi:10.1063/1.5021658

Title: Thermal imaging of high power diode lasers subject to back-irradiance

Journal Article · 07 March 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5021658 · OSTI ID:1426141

Li, C. ^[1]; Pipe, K. P. ^[2]; Cao, C. ^[3]; Thiagarajan, P. ^[3]; Deri, R. J. ^[4]; Leisher, P. O. ^[4]

Univ. of Michigan, Ann Arbor, MI (United States). Department of Mechanical Engineering
Univ. of Michigan, Ann Arbor, MI (United States). Department of Mechanical Engineering and Department of Electrical Engineering and Computer Science
Lasertel Inc., Tucson, AZ (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1426141

Alternate ID(s):: OSTI ID: 1424522

Report Number(s):: LLNL-JRNL-741541; TRN: US1802232

Journal Information:: Applied Physics Letters, Vol. 112, Issue 10; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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