Thermal imaging of high power diode lasers subject to back-irradiance
Abstract
In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States). Department of Mechanical Engineering
- Univ. of Michigan, Ann Arbor, MI (United States). Department of Mechanical Engineering and Department of Electrical Engineering and Computer Science
- Lasertel Inc., Tucson, AZ (United States)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1426141
- Alternate Identifier(s):
- OSTI ID: 1424522
- Report Number(s):
- LLNL-JRNL-741541
Journal ID: ISSN 0003-6951; TRN: US1802232
- Grant/Contract Number:
- AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 112; Journal Issue: 10; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 47 OTHER INSTRUMENTATION
Citation Formats
Li, C., Pipe, K. P., Cao, C., Thiagarajan, P., Deri, R. J., and Leisher, P. O. Thermal imaging of high power diode lasers subject to back-irradiance. United States: N. p., 2018.
Web. doi:10.1063/1.5021658.
Li, C., Pipe, K. P., Cao, C., Thiagarajan, P., Deri, R. J., & Leisher, P. O. Thermal imaging of high power diode lasers subject to back-irradiance. United States. https://doi.org/10.1063/1.5021658
Li, C., Pipe, K. P., Cao, C., Thiagarajan, P., Deri, R. J., and Leisher, P. O. Wed .
"Thermal imaging of high power diode lasers subject to back-irradiance". United States. https://doi.org/10.1063/1.5021658. https://www.osti.gov/servlets/purl/1426141.
@article{osti_1426141,
title = {Thermal imaging of high power diode lasers subject to back-irradiance},
author = {Li, C. and Pipe, K. P. and Cao, C. and Thiagarajan, P. and Deri, R. J. and Leisher, P. O.},
abstractNote = {In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.},
doi = {10.1063/1.5021658},
journal = {Applied Physics Letters},
number = 10,
volume = 112,
place = {United States},
year = {Wed Mar 07 00:00:00 EST 2018},
month = {Wed Mar 07 00:00:00 EST 2018}
}
Web of Science
Figures / Tables:
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