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Title: 3D multilevel spin transfer torque devices

Authors:
ORCiD logo [1]; ORCiD logo [2];  [2];  [2];  [3];  [3];  [3];  [4]; ORCiD logo [4]; ORCiD logo [1];  [2]
  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
  2. Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174, USA
  3. Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
  4. EECS, University of California-Berkeley, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1426020
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 112 Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Hong, J., Stone, M., Navarrete, B., Luongo, K., Zheng, Q., Yuan, Z., Xia, K., Xu, N., Bokor, J., You, L., and Khizroev, S. 3D multilevel spin transfer torque devices. United States: N. p., 2018. Web. doi:10.1063/1.5021336.
Hong, J., Stone, M., Navarrete, B., Luongo, K., Zheng, Q., Yuan, Z., Xia, K., Xu, N., Bokor, J., You, L., & Khizroev, S. 3D multilevel spin transfer torque devices. United States. doi:10.1063/1.5021336.
Hong, J., Stone, M., Navarrete, B., Luongo, K., Zheng, Q., Yuan, Z., Xia, K., Xu, N., Bokor, J., You, L., and Khizroev, S. Mon . "3D multilevel spin transfer torque devices". United States. doi:10.1063/1.5021336.
@article{osti_1426020,
title = {3D multilevel spin transfer torque devices},
author = {Hong, J. and Stone, M. and Navarrete, B. and Luongo, K. and Zheng, Q. and Yuan, Z. and Xia, K. and Xu, N. and Bokor, J. and You, L. and Khizroev, S.},
abstractNote = {},
doi = {10.1063/1.5021336},
journal = {Applied Physics Letters},
number = 11,
volume = 112,
place = {United States},
year = {2018},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5021336

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Cited by: 3 works
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Works referenced in this record:

Neural networks and physical systems with emergent collective computational abilities.
journal, April 1982

  • Hopfield, J. J.
  • Proceedings of the National Academy of Sciences, Vol. 79, Issue 8
  • DOI: 10.1073/pnas.79.8.2554

Energy-efficient spin-transfer torque magnetization reversal in sub-10-nm magnetic tunneling junction point contacts
journal, March 2013

  • Hong, Jeongmin; Liang, Ping; Safonov, Vladimir L.
  • Journal of Nanoparticle Research, Vol. 15, Issue 4
  • DOI: 10.1007/s11051-013-1599-0

Asymmetric spin absorption across a low-resistance oxide barrier
journal, July 2015

  • Chen, Shuhan; Qin, Chuan; Ji, Yi
  • Journal of Applied Physics, Vol. 118, Issue 3
  • DOI: 10.1063/1.4926948

A sub-1-volt nanoelectromechanical switching device
journal, November 2012

  • Lee, Jeong Oen; Song, Yong-Ha; Kim, Min-Wu
  • Nature Nanotechnology, Vol. 8, Issue 1
  • DOI: 10.1038/nnano.2012.208

Focused-ion-beam-based rapid prototyping of nanoscale magnetic devices
journal, December 2003


GPU Computing
journal, May 2008


Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures
journal, June 2011

  • Gan, Huadong; Ikeda, Shoji; Yamanouchi, Michihiko
  • IEEE Transactions on Magnetics, Vol. 47, Issue 6
  • DOI: 10.1109/TMAG.2010.2104137

Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
journal, September 2012

  • Kanai, S.; Yamanouchi, M.; Ikeda, S.
  • Applied Physics Letters, Vol. 101, Issue 12
  • DOI: 10.1063/1.4753816

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
journal, July 2010

  • Ikeda, S.; Miura, K.; Yamamoto, H.
  • Nature Materials, Vol. 9, Issue 9
  • DOI: 10.1038/nmat2804

Spintronics: A Spin-Based Electronics Vision for the Future
journal, November 2001

  • Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.
  • Science, Vol. 294, Issue 5546, p. 1488-1495
  • DOI: 10.1126/science.1065389

Spin transfer torques
journal, April 2008


A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy
journal, August 2016

  • Lequeux, Steven; Sampaio, Joao; Cros, Vincent
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep31510

Fast current-induced domain-wall motion controlled by the Rashba effect
journal, May 2011

  • Miron, Ioan Mihai; Moore, Thomas; Szambolics, Helga
  • Nature Materials, Vol. 10, Issue 6
  • DOI: 10.1038/nmat3020

Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm
journal, July 2017

  • Sato, Hideo; Ikeda, Shoji; Ohno, Hideo
  • Japanese Journal of Applied Physics, Vol. 56, Issue 8
  • DOI: 10.7567/JJAP.56.0802A6

Novel STT-MRAM-based last level caches for high performance processors using normally-off architectures
conference, December 2014

  • Fujita, Shinobu; Noguchi, Hiroki; Ikegami, Kazutaka
  • 2014 International Symposium on Integrated Circuits (ISIC)
  • DOI: 10.1109/ISICIR.2014.7029504

Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
journal, February 2009

  • Feng, G.; van Dijken, Sebastiaan; Feng, J. F.
  • Journal of Applied Physics, Vol. 105, Issue 3
  • DOI: 10.1063/1.3068186

Engineering atomic and molecular nanostructures at surfaces
journal, September 2005

  • Barth, Johannes V.; Costantini, Giovanni; Kern, Klaus
  • Nature, Vol. 437, Issue 7059
  • DOI: 10.1038/nature04166

Experimental test of Landauer’s principle in single-bit operations on nanomagnetic memory bits
journal, March 2016


Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
journal, August 2014

  • Sato, H.; Enobio, E. C. I.; Yamanouchi, M.
  • Applied Physics Letters, Vol. 105, Issue 6
  • DOI: 10.1063/1.4892924

Enhancement of perpendicular magnetic anisotropy in FeB free layers using a thin MgO cap layer
journal, April 2012

  • Kubota, Hitoshi; Ishibashi, Shota; Saruya, Takeshi
  • Journal of Applied Physics, Vol. 111, Issue 7
  • DOI: 10.1063/1.3679393

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
journal, March 2012

  • Gajek, M.; Nowak, J. J.; Sun, J. Z.
  • Applied Physics Letters, Vol. 100, Issue 13
  • DOI: 10.1063/1.3694270

The Physics of Spin-Transfer Torque Switching in Magnetic Tunneling Junctions in Sub-10 nm Size Range
journal, July 2016

  • Hong, Jeongmin; Hadjikhani, Ali; Stone, Mark
  • IEEE Transactions on Magnetics, Vol. 52, Issue 7
  • DOI: 10.1109/TMAG.2016.2530622

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
journal, September 2011

  • Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru
  • Advanced Materials, Vol. 24, Issue 2
  • DOI: 10.1002/adma.201102597

Nanoelectromechanical Switches for Low-Power Digital Computing
journal, August 2015

  • Peschot, Alexis; Qian, Chuang; Liu, Tsu-Jae
  • Micromachines, Vol. 6, Issue 8
  • DOI: 10.3390/mi6081046

Quantum Superposition of Macroscopic Persistent-Current States
journal, October 2000


Spin Hall effect clocking of nanomagnetic logic without a magnetic field
journal, November 2013

  • Bhowmik, Debanjan; You, Long; Salahuddin, Sayeef
  • Nature Nanotechnology, Vol. 9, Issue 1
  • DOI: 10.1038/nnano.2013.241

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions
journal, January 2011

  • Worledge, D. C.; Hu, G.; Abraham, David W.
  • Applied Physics Letters, Vol. 98, Issue 2
  • DOI: 10.1063/1.3536482

Sub-10-nm-resolution electron-beam lithography toward very-high-density multilevel 3D nano-magnetic information devices
journal, May 2013

  • Lee, Beomseop; Hong, Jeongmin; Amos, Nissim
  • Journal of Nanoparticle Research, Vol. 15, Issue 6
  • DOI: 10.1007/s11051-013-1665-7

Ion beam Lithography and Nanofabrication: a Review
journal, June 2005

  • Watt, F.; Bettiol, A. A.; Van Kan, J. A.
  • International Journal of Nanoscience, Vol. 04, Issue 03
  • DOI: 10.1142/S0219581X05003139

Internet of Things (IoT): A vision, architectural elements, and future directions
journal, September 2013

  • Gubbi, Jayavardhana; Buyya, Rajkumar; Marusic, Slaven
  • Future Generation Computer Systems, Vol. 29, Issue 7
  • DOI: 10.1016/j.future.2013.01.010

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011

  • Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
  • Nature Materials, Vol. 10, Issue 8, p. 625-630
  • DOI: 10.1038/nmat3070

Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction
journal, March 2017

  • Yoshida, Chikako; Noshiro, Hideyuki; Yamazaki, Yuichi
  • AIP Advances, Vol. 7, Issue 5
  • DOI: 10.1063/1.4978460

Bioelectronics
journal, September 1968


Energy-Efficient Design Methodologies: High-Performance VLSI Adders
journal, June 2010

  • Zeydel, Bart R.; Baran, Dursun; Oklobdzija, Vojin G.
  • IEEE Journal of Solid-State Circuits, Vol. 45, Issue 6
  • DOI: 10.1109/JSSC.2010.2048730

Breaking the Speed Limits of Phase-Change Memory
journal, June 2012