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This content will become publicly available on March 14, 2019

Title: 3D multilevel spin transfer torque devices

Authors:
ORCiD logo [1] ; ORCiD logo [2] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3] ;  [4] ; ORCiD logo [4] ; ORCiD logo [1] ;  [2]
  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
  2. Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174, USA
  3. Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
  4. EECS, University of California-Berkeley, Berkeley, California 94720, USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 112 Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1426020

Hong, J., Stone, M., Navarrete, B., Luongo, K., Zheng, Q., Yuan, Z., Xia, K., Xu, N., Bokor, J., You, L., and Khizroev, S.. 3D multilevel spin transfer torque devices. United States: N. p., Web. doi:10.1063/1.5021336.
Hong, J., Stone, M., Navarrete, B., Luongo, K., Zheng, Q., Yuan, Z., Xia, K., Xu, N., Bokor, J., You, L., & Khizroev, S.. 3D multilevel spin transfer torque devices. United States. doi:10.1063/1.5021336.
Hong, J., Stone, M., Navarrete, B., Luongo, K., Zheng, Q., Yuan, Z., Xia, K., Xu, N., Bokor, J., You, L., and Khizroev, S.. 2018. "3D multilevel spin transfer torque devices". United States. doi:10.1063/1.5021336.
@article{osti_1426020,
title = {3D multilevel spin transfer torque devices},
author = {Hong, J. and Stone, M. and Navarrete, B. and Luongo, K. and Zheng, Q. and Yuan, Z. and Xia, K. and Xu, N. and Bokor, J. and You, L. and Khizroev, S.},
abstractNote = {},
doi = {10.1063/1.5021336},
journal = {Applied Physics Letters},
number = 11,
volume = 112,
place = {United States},
year = {2018},
month = {3}
}

Works referenced in this record:

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
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