DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Focussed helium ion channeling through Si nanomembranes

Journal Article · · Journal of Vacuum Science and Technology B
DOI: https://doi.org/10.1116/1.5020667 · OSTI ID:1426006
 [1];  [1];  [1];  [2];  [3];  [1]
  1. Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
  2. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706
  3. Department of Physics, University of Montreal, Montreal, Quebec, Canada H3T 1J4

Not Available

Sponsoring Organization:
USDOE
OSTI ID:
1426006
Journal Information:
Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 2 Vol. 36; ISSN 2166-2746
Publisher:
American Vacuum SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (10)

Reduction in Modulus of Suspended Sub-2 nm Single Crystalline Silicon Nanomembranes journal July 2017
Displacement threshold energies in β-SiC journal March 1998
50 years of ion channeling in materials science journal March 2016
Dark-Field Scanning Transmission Ion Microscopy via Detection of Forward-Scattered Helium Ions with a Microchannel Plate journal May 2016
Capturing Structural Dynamics in Crystalline Silicon Using Chirped Electrons from a Laser Wakefield Accelerator journal November 2016
Fundamental limits to detection of low-energy ions using silicon solid-state detectors journal May 2004
Edge-induced flattening in the fabrication of ultrathin freestanding crystalline silicon sheets journal January 2013
Subsurface damage from helium ions as a function of dose, beam energy, and dose rate
  • Livengood, Richard; Tan, Shida; Greenzweig, Yuval
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 6 https://doi.org/10.1116/1.3237101
journal January 2009
Camera for transmission He+ ion microscopy
  • Kavanagh, Karen L.; Herrmann, Christoph; Notte, John A.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 35, Issue 6 https://doi.org/10.1116/1.4991898
journal November 2017
Channeling in helium ion microscopy: Mapping of crystal orientation journal January 2012

Similar Records

Charge state ratios for helium ions channelled through silicon
Journal Article · 1974 · Phys. Lett., A, v. 50, no. 4, pp. 273-274 · OSTI ID:4213022

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane
Journal Article · 2016 · Nanotechnology · OSTI ID:1240195

Isothermal flow of superfluid helium through narrow channels
Journal Article · 1973 · J. Low Temp. Phys., v. 12, no. 3/4, pp. 275-283 · OSTI ID:4430523

Related Subjects