skip to main content

DOE PAGESDOE PAGES

Title: Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctly different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.
Authors:
 [1] ;  [2] ;  [3] ; ORCiD logo [1]
  1. Univ. of Notre Dame, IN (United States)
  2. Univ. of Notre Dame, IN (United States); Osaka Municipal Technical Research Inst., Osaka (Japan); Advanced Technology Division Toyota Motor Europe, Savantem (Belgium)
  3. Advanced Technology Division Toyota Motor Europe, Zaventem B-1930, Belgium
Publication Date:
Grant/Contract Number:
FC02-04ER15533
Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 36; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Research Org:
Univ. of Notre Dame, IN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Chemical Sciences, Geosciences & Biosciences Division
Country of Publication:
United States
Language:
English
Subject:
quantum dots, LED, light-emitting devices, hole-transferring material, electroluminescence, CIZS
OSTI Identifier:
1425980

Zaiats, Gary, Ikeda, Shingo, Kinge, Sachin, and Kamat, Prashant V. Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels. United States: N. p., Web. doi:10.1021/acsami.7b07893.
Zaiats, Gary, Ikeda, Shingo, Kinge, Sachin, & Kamat, Prashant V. Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels. United States. doi:10.1021/acsami.7b07893.
Zaiats, Gary, Ikeda, Shingo, Kinge, Sachin, and Kamat, Prashant V. 2017. "Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels". United States. doi:10.1021/acsami.7b07893. https://www.osti.gov/servlets/purl/1425980.
@article{osti_1425980,
title = {Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels},
author = {Zaiats, Gary and Ikeda, Shingo and Kinge, Sachin and Kamat, Prashant V.},
abstractNote = {Multinary semiconductor nanoparticles such as CuInS2, AgInS2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctly different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.},
doi = {10.1021/acsami.7b07893},
journal = {ACS Applied Materials and Interfaces},
number = 36,
volume = 9,
place = {United States},
year = {2017},
month = {8}
}