skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Enhanced nucleation of germanium on graphene via dipole engineering

Abstract

The preparation of crystalline materials on incommensurate substrates has been a key topic of epitaxy.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [3];  [3];  [4];  [5]; ORCiD logo [3]; ORCiD logo [4];  [6];  [5]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Univ. of California, San Diego, CA (United States)
  3. Seoul National Univ. (Korea, Republic of)
  4. Sejong Univ., Seoul (Korea, Republic of)
  5. Korea Univ., Seoul (Korea, Republic of)
  6. Korea Electronics Technology Inst., Seongnam (Korea, Republic of)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1425763
Report Number(s):
LA-UR-17-27137
Journal ID: ISSN 2040-3364; NANOHL; TRN: US1802158
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 12; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science

Citation Formats

Yoo, Jinkyoung, Ahmed, Towfiq, Chen, Renjie, Chen, Aiping, Kim, Yeon Hoo, Kwon, Ki Chang, Park, Chan Woong, Kang, Hee Seong, Jang, Ho Won, Hong, Young Joon, Yang, Woo Seok, and Lee, Chul-Ho. Enhanced nucleation of germanium on graphene via dipole engineering. United States: N. p., 2018. Web. doi:10.1039/C7NR06684H.
Yoo, Jinkyoung, Ahmed, Towfiq, Chen, Renjie, Chen, Aiping, Kim, Yeon Hoo, Kwon, Ki Chang, Park, Chan Woong, Kang, Hee Seong, Jang, Ho Won, Hong, Young Joon, Yang, Woo Seok, & Lee, Chul-Ho. Enhanced nucleation of germanium on graphene via dipole engineering. United States. doi:10.1039/C7NR06684H.
Yoo, Jinkyoung, Ahmed, Towfiq, Chen, Renjie, Chen, Aiping, Kim, Yeon Hoo, Kwon, Ki Chang, Park, Chan Woong, Kang, Hee Seong, Jang, Ho Won, Hong, Young Joon, Yang, Woo Seok, and Lee, Chul-Ho. Mon . "Enhanced nucleation of germanium on graphene via dipole engineering". United States. doi:10.1039/C7NR06684H. https://www.osti.gov/servlets/purl/1425763.
@article{osti_1425763,
title = {Enhanced nucleation of germanium on graphene via dipole engineering},
author = {Yoo, Jinkyoung and Ahmed, Towfiq and Chen, Renjie and Chen, Aiping and Kim, Yeon Hoo and Kwon, Ki Chang and Park, Chan Woong and Kang, Hee Seong and Jang, Ho Won and Hong, Young Joon and Yang, Woo Seok and Lee, Chul-Ho},
abstractNote = {The preparation of crystalline materials on incommensurate substrates has been a key topic of epitaxy.},
doi = {10.1039/C7NR06684H},
journal = {Nanoscale},
number = 12,
volume = 10,
place = {United States},
year = {2018},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Scanning electron microscopy (SEM) images of the samples after Ge growth at 450°C for 40 min on various 2D materials prepared on SiO2/Si substrates: (a) monolayer (1L) graphene, (b) mechanically exfoliated h-BN, (c) ozonated 1L graphene. (d–f) Cross-sectional transmission electron microscopy images (X-TEM): (d) Ge nanocrystal grown onmore » 1L graphene/SiO2/Si substrate. (e) Magnified image of (d). (f) Ge grain grown on ozonated 1L graphene/SiO2/Si substrate.« less

Save / Share:

Works referenced in this record:

Adatoms, dimers, and interstitials on group-IV(113) surfaces: First-principles studies of energetical, structural, and electronic properties
journal, May 2003


Highly confined low-loss plasmons in graphene–boron nitride heterostructures
journal, December 2014

  • Woessner, Achim; Lundeberg, Mark B.; Gao, Yuanda
  • Nature Materials, Vol. 14, Issue 4
  • DOI: 10.1038/nmat4169

Artificially Stacked Atomic Layers: Toward New van der Waals Solids
journal, June 2012

  • Gao, Guanhui; Gao, Wei; Cannuccia, E.
  • Nano Letters, Vol. 12, Issue 7
  • DOI: 10.1021/nl301061b

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
journal, April 2012

  • Kobayashi, Yasuyuki; Kumakura, Kazuhide; Akasaka, Tetsuya
  • Nature, Vol. 484, Issue 7393
  • DOI: 10.1038/nature10970

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
journal, April 2014


Ozone-exposure and annealing effects on graphene-on-SiO 2 transistors
journal, September 2012

  • Zhang, E. X.; Newaz, A. K. M.; Wang, B.
  • Applied Physics Letters, Vol. 101, Issue 12
  • DOI: 10.1063/1.4753817

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
journal, September 2014

  • Kim, Jeehwan; Bayram, Can; Park, Hongsik
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5836

Van der Waals epitaxy of three‐dimensional CdS on the two‐dimensional layered substrate MoTe 2 (0001)
journal, August 1994

  • Löher, T.; Tomm, Y.; Pettenkofer, C.
  • Applied Physics Letters, Vol. 65, Issue 5
  • DOI: 10.1063/1.112294

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene
journal, February 2012

  • Hong, Young Joon; Lee, Wi Hyoung; Wu, Yaping
  • Nano Letters, Vol. 12, Issue 3
  • DOI: 10.1021/nl204109t

Polarity of oxide surfaces and nanostructures
journal, December 2007


Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
journal, October 2010


Synthesis of Group IV Nanowires on Graphene: The Case of Ge Nanocrawlers
journal, July 2016


Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
journal, August 2014

  • Alaskar, Yazeed; Arafin, Shamsul; Wickramaratne, Darshana
  • Advanced Functional Materials, Vol. 24, Issue 42
  • DOI: 10.1002/adfm.201400960

Remote epitaxy through graphene enables two-dimensional material-based layer transfer
journal, April 2017

  • Kim, Yunjo; Cruz, Samuel S.; Lee, Kyusang
  • Nature, Vol. 544, Issue 7650
  • DOI: 10.1038/nature22053

Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattices
journal, August 2011


Centimeter-sized epitaxial h-BN films
journal, November 2016

  • Oh, Hongseok; Jo, Janghyun; Tchoe, Youngbin
  • NPG Asia Materials, Vol. 8, Issue 11
  • DOI: 10.1038/am.2016.178

Migration of adatom adsorption on graphene using DFT calculation
journal, January 2011


Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy
journal, January 2013

  • Bakti Utama, Muhammad Iqbal; Zhang, Qing; Zhang, Jun
  • Nanoscale, Vol. 5, Issue 9
  • DOI: 10.1039/c3nr34011b

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
journal, December 2014

  • Oh, Hongseok; Hong, Young Joon; Kim, Kun-Su
  • NPG Asia Materials, Vol. 6, Issue 12
  • DOI: 10.1038/am.2014.108

Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer h-BN Heterostructures
journal, June 2014

  • Brar, Victor W.; Jang, Min Seok; Sherrott, Michelle
  • Nano Letters, Vol. 14, Issue 7
  • DOI: 10.1021/nl501096s

Incommensurate van der Waals Epitaxy of Nanowire Arrays: A Case Study with ZnO on Muscovite Mica Substrates
journal, January 2012

  • Utama, Muhammad Iqbal Bakti; Belarre, Francisco J.; Magen, Cesar
  • Nano Letters, Vol. 12, Issue 4
  • DOI: 10.1021/nl300554t

Measurement of the Quadratic Magnetoelectric Effect on Single Crystalline BiFeO 3
journal, January 1985

  • Tabares-Mun̄oz, C.; Rivera, J. -P.; Bezinges, A.
  • Japanese Journal of Applied Physics, Vol. 24, Issue S2
  • DOI: 10.7567/JJAPS.24S2.1051

Growth and Characterization of GaAs/GaSe/Si Heterostructures
journal, August 1993

  • Palmer, Joyce E.; Saitoh, Tohru; Yodo, Tokuo
  • Japanese Journal of Applied Physics, Vol. 32, Issue Part 2, No. 8B
  • DOI: 10.1143/JJAP.32.L1126

Molecular beam epitaxy of GaN on a substrate of MoS 2 layered compound
journal, July 1999

  • Yamada, A.; Ho, K. P.; Maruyama, T.
  • Applied Physics A: Materials Science & Processing, Vol. 69, Issue 1
  • DOI: 10.1007/s003390050976

Quasi van der Waals epitaxy of ZnSe on the layered chalcogenides InSe and GaSe
journal, December 2000


In x Ga 1– x As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
journal, February 2013

  • Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D.
  • Nano Letters, Vol. 13, Issue 3
  • DOI: 10.1021/nl304569d

Lattice Transparency of Graphene
journal, February 2017


Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
journal, August 1992


Equilibrium shape of Si
journal, March 1993


Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition
journal, January 2016

  • Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq
  • Nanoscale, Vol. 8, Issue 44
  • DOI: 10.1039/C6NR03621J

High-Resolution Observation of Nucleation and Growth Behavior of Nanomaterials Using a Graphene Template
journal, January 2014


Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite
journal, June 2015


Epitaxy of GaN Nanowires on Graphene
journal, July 2016


Layered compound substrates for GaN growth
journal, May 1999


Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
journal, January 2012

  • Munshi, A. Mazid; Dheeraj, Dasa L.; Fauske, Vidar T.
  • Nano Letters, Vol. 12, Issue 9
  • DOI: 10.1021/nl3018115

UV/Ozone-Oxidized Large-Scale Graphene Platform with Large Chemical Enhancement in Surface-Enhanced Raman Scattering
journal, November 2011

  • Huh, Sung; Park, Jaesung; Kim, Young Soo
  • ACS Nano, Vol. 5, Issue 12
  • DOI: 10.1021/nn204156n

    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.