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Title: Quasiballistic quantum transport through Ge/Si core/shell nanowires

Abstract

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry–Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1–3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [1]
  1. Univ. of Pittsburgh, PA (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Univ. of California, San Diego, CA (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1425762
Report Number(s):
[LA-UR-17-26870]
[Journal ID: ISSN 0957-4484]
Grant/Contract Number:  
[AC52-06NA25396]
Resource Type:
Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
[ Journal Volume: 28; Journal Issue: 38]; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Material Science

Citation Formats

Kotekar-Patil, D., Nguyen, B-M, Yoo, J., Dayeh, S. A., and Frolov, S. M. Quasiballistic quantum transport through Ge/Si core/shell nanowires. United States: N. p., 2017. Web. doi:10.1088/1361-6528/aa7f82.
Kotekar-Patil, D., Nguyen, B-M, Yoo, J., Dayeh, S. A., & Frolov, S. M. Quasiballistic quantum transport through Ge/Si core/shell nanowires. United States. doi:10.1088/1361-6528/aa7f82.
Kotekar-Patil, D., Nguyen, B-M, Yoo, J., Dayeh, S. A., and Frolov, S. M. Mon . "Quasiballistic quantum transport through Ge/Si core/shell nanowires". United States. doi:10.1088/1361-6528/aa7f82. https://www.osti.gov/servlets/purl/1425762.
@article{osti_1425762,
title = {Quasiballistic quantum transport through Ge/Si core/shell nanowires},
author = {Kotekar-Patil, D. and Nguyen, B-M and Yoo, J. and Dayeh, S. A. and Frolov, S. M.},
abstractNote = {We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry–Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1–3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.},
doi = {10.1088/1361-6528/aa7f82},
journal = {Nanotechnology},
number = [38],
volume = [28],
place = {United States},
year = {2017},
month = {9}
}

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