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This content will become publicly available on March 13, 2019

Title: Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 x As Nanostructures

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
SC0006671
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 3; Related Information: CHORUS Timestamp: 2018-03-13 14:07:51; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1425719