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Title: Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 x As Nanostructures

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1425719
Grant/Contract Number:  
SC0006671
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Name: Physical Review Applied Journal Volume: 9 Journal Issue: 3; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Fallahi, S., Nakamura, J. R., Gardner, G. C., Yannell, M. M., and Manfra, M. J. Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 − x As Nanostructures. United States: N. p., 2018. Web. doi:10.1103/PhysRevApplied.9.034008.
Fallahi, S., Nakamura, J. R., Gardner, G. C., Yannell, M. M., & Manfra, M. J. Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 − x As Nanostructures. United States. doi:10.1103/PhysRevApplied.9.034008.
Fallahi, S., Nakamura, J. R., Gardner, G. C., Yannell, M. M., and Manfra, M. J. Tue . "Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 − x As Nanostructures". United States. doi:10.1103/PhysRevApplied.9.034008.
@article{osti_1425719,
title = {Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 − x As Nanostructures},
author = {Fallahi, S. and Nakamura, J. R. and Gardner, G. C. and Yannell, M. M. and Manfra, M. J.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.9.034008},
journal = {Physical Review Applied},
number = 3,
volume = 9,
place = {United States},
year = {2018},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevApplied.9.034008

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Cited by: 1 work
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