skip to main content


This content will become publicly available on January 8, 2019

Title: Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

III - As nanowires are candidates for near-infrared light emitters and detectors that can be directly integrated onto silicon. However, nanoscale to microscale variations in structure, composition, and strain within a given nanowire, as well as variations between nanowires, pose challenges to correlating microstructure with device performance. In this work, we utilize coherent nanofocused X-rays to characterize stacking defects and strain in a single InGaAs nanowire supported on Si. By reconstructing diffraction patterns from the 2110 Bragg peak, we show that the lattice orientation varies along the length of the wire, while the strain field along the cross-section is largely unaffected, leaving the band structure unperturbed. Diffraction patterns from the 0110 Bragg peak are reproducibly reconstructed to create three-dimensional images of stacking defects and associated lattice strains, revealing sharp planar boundaries between different crystal phases of wurtzite (WZ) structure that contribute to charge carrier scattering. Phase retrieval is made possible by developing multiangle Bragg projection ptychography (maBPP) to accommodate coherent nanodiffraction patterns measured at arbitrary overlapping positions at multiple angles about a Bragg peak, eliminating the need for scan registration at different angles. The penetrating nature of X-ray radiation, together with the relaxed constraints of maBPP, will enable the inmore » operando imaging of nanowire devices.« less
ORCiD logo [1] ;  [2] ;  [3] ;  [4] ;  [2] ;  [5] ; ORCiD logo [5] ;  [1] ;  [6] ;  [6] ;  [6] ;  [6] ;  [2] ;  [3] ; ORCiD logo [1] ;  [2]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Aix-Marseille Univ., and CNRS/IN2P3, Marseille (France)
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  5. Technische Univ. Munich (Germany). Walter Schottky Inst. and Physik Dept.
  6. Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
Publication Date:
Report Number(s):
Journal ID: ISSN 1530-6984; 138261
Grant/Contract Number:
AC02-06CH11357; SC0012704
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1530-6984
American Chemical Society
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States); Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; European Union (EU); National Science Foundation (NSF); German Research Foundation (DFG); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; Bragg ptychography; III-V; coherent X-ray diffraction imaging; nanowire; stacking faults; strain imaging; 77 NANOSCIENCE AND NANOTECHNOLOGY
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1426467