Tunable Γ − K Valley Populations in Hole-Doped Trilayer WSe 2

Movva, Hema C. P.; Lovorn, Timothy; Fallahazad, Babak; Larentis, Stefano; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K.; MacDonald, Allan H.; Tutuc, Emanuel

doi:10.1103/PhysRevLett.120.107703

Title: Tunable $Γ - K$ Valley Populations in Hole-Doped Trilayer ${WSe}_{2}$

Authors:: Movva, Hema C. P.; Lovorn, Timothy; Fallahazad, Babak; Larentis, Stefano; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K.; MacDonald, Allan H.; Tutuc, Emanuel

Publication Date:: Fri Mar 09 00:00:00 EST 2018

Sponsoring Org.:: USDOE

OSTI Identifier:: 1425239

Grant/Contract Number:: FG03-02ER45958

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Name: Physical Review Letters Journal Volume: 120 Journal Issue: 10; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Movva, Hema C. P., Lovorn, Timothy, Fallahazad, Babak, Larentis, Stefano, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., MacDonald, Allan H., and Tutuc, Emanuel. Tunable Γ − K Valley Populations in Hole-Doped Trilayer WSe 2.  United States: N. p., 2018. 
Web.  doi:10.1103/PhysRevLett.120.107703.

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                    Movva, Hema C. P., Lovorn, Timothy, Fallahazad, Babak, Larentis, Stefano, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., MacDonald, Allan H., & Tutuc, Emanuel. Tunable Γ − K Valley Populations in Hole-Doped Trilayer WSe 2.  United States.  https://doi.org/10.1103/PhysRevLett.120.107703

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                    Movva, Hema C. P., Lovorn, Timothy, Fallahazad, Babak, Larentis, Stefano, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., MacDonald, Allan H., and Tutuc, Emanuel. Fri .  
"Tunable Γ − K Valley Populations in Hole-Doped Trilayer WSe 2".  United States.  https://doi.org/10.1103/PhysRevLett.120.107703.

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@article{osti_1425239,

  title        = {Tunable Γ − K Valley Populations in Hole-Doped Trilayer WSe 2},

  author       = {Movva, Hema C. P. and Lovorn, Timothy and Fallahazad, Babak and Larentis, Stefano and Kim, Kyounghwan and Taniguchi, Takashi and Watanabe, Kenji and Banerjee, Sanjay K. and MacDonald, Allan H. and Tutuc, Emanuel},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.120.107703},

  journal      = {Physical Review Letters},

  number       = 10,

  volume       = 120,

  place        = {United States},

  year         = {Fri Mar 09 00:00:00 EST 2018},

  month        = {Fri Mar 09 00:00:00 EST 2018}

}

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Title: Tunable Γ − K Valley Populations in Hole-Doped Trilayer WSe 2

Citation Formats

First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity journal, April 2015

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides journal, May 2012

Generalized Gradient Approximation Made Simple journal, October 1996

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides journal, April 2016

Comparative study of van der Waals corrections to the bulk properties of graphite journal, September 2015

Electrical control of the valley Hall effect in bilayer MoS2 transistors journal, January 2016

An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions journal, August 2014

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe 2 Thin Films journal, March 2016

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials journal, September 2009

Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide journal, January 2015

Electrically Tunable Bandgaps in Bilayer MoS 2 journal, November 2015

Band Alignment in WSe 2 –Graphene Heterostructures journal, February 2015

Stark Effect Spectroscopy of Mono- and Few-Layer MoS 2 journal, February 2016

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors journal, October 2011

One-Dimensional Electrical Contact to a Two-Dimensional Material journal, October 2013

Optimized norm-conserving Vanderbilt pseudopotentials journal, August 2013

Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe 2 : Landau Level Degeneracy, Effective Mass, and Negative Compressibility journal, February 2016

Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe 2 journal, February 2017

van der Waals Heterostructures with High Accuracy Rotational Alignment journal, February 2016

Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport journal, December 2007

Dispersion corrections in graphenic systems: a simple and effective model of binding journal, October 2013

Self-interaction correction to density-functional approximations for many-electron systems journal, May 1981

Optimization algorithm for the generation of ONCV pseudopotentials journal, November 2015

Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides journal, June 2015

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- M X 2 semiconductors ( M = Mo, W; X = S, Se, Te) journal, January 2012

The valley Hall effect in MoS2 transistors journal, June 2014

Evolution of Electronic Structure in Atomically Thin Sheets of WS 2 and WSe 2 journal, December 2012

Ab initio tight-binding Hamiltonian for transition metal dichalcogenides journal, November 2015

Tunable band gaps in bilayer transition-metal dichalcogenides journal, November 2011

High-Mobility Holes in Dual-Gated WSe 2 Field-Effect Transistors journal, September 2015

A Note on the Quantum‐Mechanical Perturbation Theory journal, November 1951

Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe 2 journal, September 2015

Zeeman-type spin splitting controlled by an electric field journal, July 2013

Title: Tunable $Γ - K$ Valley Populations in Hole-Doped Trilayer ${WSe}_{2}$

First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
journal, April 2015

Coupled Spin and Valley Physics in Monolayers of ${MoS}_{2}$ and Other Group-VI Dichalcogenides
journal, May 2012

Generalized Gradient Approximation Made Simple
journal, October 1996

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
journal, April 2016

Comparative study of van der Waals corrections to the bulk properties of graphite
journal, September 2015

Electrical control of the valley Hall effect in bilayer MoS2 transistors
journal, January 2016

An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions
journal, August 2014

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe ₂ Thin Films
journal, March 2016

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide
journal, January 2015

Electrically Tunable Bandgaps in Bilayer MoS ₂
journal, November 2015

Band Alignment in WSe ₂ –Graphene Heterostructures
journal, February 2015

Stark Effect Spectroscopy of Mono- and Few-Layer MoS ₂
journal, February 2016

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
journal, October 2011

One-Dimensional Electrical Contact to a Two-Dimensional Material
journal, October 2013

Optimized norm-conserving Vanderbilt pseudopotentials
journal, August 2013

Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer ${WSe}_{2}$ : Landau Level Degeneracy, Effective Mass, and Negative Compressibility
journal, February 2016

Odd-Integer Quantum Hall States and Giant Spin Susceptibility in $p$ -Type Few-Layer ${WSe}_{2}$
journal, February 2017

van der Waals Heterostructures with High Accuracy Rotational Alignment
journal, February 2016

Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport
journal, December 2007

Dispersion corrections in graphenic systems: a simple and effective model of binding
journal, October 2013

Self-interaction correction to density-functional approximations for many-electron systems
journal, May 1981

Optimization algorithm for the generation of ONCV pseudopotentials
journal, November 2015

Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
journal, June 2015

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- $M X_{2}$ semiconductors ( $M$ $=$ Mo, W; $X$ $=$ S, Se, Te)
journal, January 2012

The valley Hall effect in MoS2 transistors
journal, June 2014

Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂
journal, December 2012

Ab initio tight-binding Hamiltonian for transition metal dichalcogenides
journal, November 2015

Tunable band gaps in bilayer transition-metal dichalcogenides
journal, November 2011

High-Mobility Holes in Dual-Gated WSe ₂ Field-Effect Transistors
journal, September 2015

A Note on the Quantum‐Mechanical Perturbation Theory
journal, November 1951

Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe ₂
journal, September 2015

Zeeman-type spin splitting controlled by an electric field
journal, July 2013