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Title: Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes


Here a novel ultrathin lutetium oxide (Lu 2O 3) interlayer is integrated with crystalline bismuth vanadate (BiVO4) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu 2O 32O 3

ORCiD logo [1];  [1];  [1];  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1416395
Report Number(s):
Journal ID: ISSN 1616-301X; TRN: US1802028
Grant/Contract Number:  
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 10; Journal ID: ISSN 1616-301X
Country of Publication:
United States

Citation Formats

Zhang, Wenrui, Yan, Danhua, Tong, Xiao, and Liu, Mingzhao. Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes. United States: N. p., 2018. Web. doi:10.1002/adfm.201705512.
Zhang, Wenrui, Yan, Danhua, Tong, Xiao, & Liu, Mingzhao. Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes. United States. doi:10.1002/adfm.201705512.
Zhang, Wenrui, Yan, Danhua, Tong, Xiao, and Liu, Mingzhao. Mon . "Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes". United States. doi:10.1002/adfm.201705512.
title = {Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes},
author = {Zhang, Wenrui and Yan, Danhua and Tong, Xiao and Liu, Mingzhao},
abstractNote = {Here a novel ultrathin lutetium oxide (Lu2O3) interlayer is integrated with crystalline bismuth vanadate (BiVO4) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu2O32O3},
doi = {10.1002/adfm.201705512},
journal = {Advanced Functional Materials},
number = 10,
volume = 28,
place = {United States},
year = {2018},
month = {1}

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Cited by: 7 works
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Figures / Tables:

Scheme 1 Scheme 1: (a) Schematic device structure and (b) lattice model representing the epitaxial relationship of BVO/LO/ITO/YSZ heterostructures for solar water splitting. The lattice mismatch (ε) between the top and bottom underlayer is calculated by ε = (atop - abot) × 2/(atop + abot), where atop and abot are the latticemore » constant for the top and bottom layers, respectively. aITO and aLO are divided by a factor of 2 for the lattice mismatch calculation assuming a 2:1 matching relationship with the BVO layer.« less

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