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Title: Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

Abstract

Zinc oxide (ZnO) nanowire arrays have potential applications for various devices including ultra-violet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of the reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3];  [2]; ORCiD logo [2];  [2];  [2]; ORCiD logo [2];  [2];  [2]
+ Show Author Affiliations
  1. Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Stony Brook Univ., NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1425053
Alternate Identifier(s):
OSTI ID: 1411282
Report Number(s):
BNL-114871-2017-JAAM
Journal ID: ISSN 0003-6951; TRN: US1802019
Grant/Contract Number:  
SC0012704; SC00122704
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yan, Danhua, Zhang, Wenrui, Cen, Jiajie, Stavitski, Eli, Sadowski, Jerzy T., Vescovo, Elio, Walter, Andrew, Attenkofer, Klaus, Stacchiola, Darío J., and Liu, Mingzhao. Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering. United States: N. p., 2017. Web. doi:10.1063/1.5001043.
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Yan, Danhua, Zhang, Wenrui, Cen, Jiajie, Stavitski, Eli, Sadowski, Jerzy T., Vescovo, Elio, Walter, Andrew, Attenkofer, Klaus, Stacchiola, Darío J., & Liu, Mingzhao. Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering. United States. https://doi.org/10.1063/1.5001043
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Yan, Danhua, Zhang, Wenrui, Cen, Jiajie, Stavitski, Eli, Sadowski, Jerzy T., Vescovo, Elio, Walter, Andrew, Attenkofer, Klaus, Stacchiola, Darío J., and Liu, Mingzhao. Mon . "Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering". United States. https://doi.org/10.1063/1.5001043. https://www.osti.gov/servlets/purl/1425053.
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@article{osti_1425053,
title = {Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering},
author = {Yan, Danhua and Zhang, Wenrui and Cen, Jiajie and Stavitski, Eli and Sadowski, Jerzy T. and Vescovo, Elio and Walter, Andrew and Attenkofer, Klaus and Stacchiola, Darío J. and Liu, Mingzhao},
abstractNote = {Zinc oxide (ZnO) nanowire arrays have potential applications for various devices including ultra-violet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of the reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects.},
doi = {10.1063/1.5001043},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {Mon Dec 04 00:00:00 EST 2017},
month = {Mon Dec 04 00:00:00 EST 2017}
}
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https://doi.org/10.1063/1.5001043
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    Works referencing / citing this record:

    High-performance organic/inorganic hybrid ultraviolet p-NiO/PVK/n-ZnO heterojunction photodiodes with a poly( N -vinylcarbazole) insertion layer
    journal, January 2019

    • Hwang, Jun Dar; Fan, Chun Wei
    • Journal of Materials Chemistry C, Vol. 7, Issue 12
    • DOI: 10.1039/c8tc04950e
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