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This content will become publicly available on November 13, 2018

Title: Origin of Low-Energy Spurious Peaks in Spectroscopic Measurements With Silicon Detectors

We report that when an uncollimated radioactive X-ray source illuminates a silicon PIN sensor, some ionizing events are generated in the nonimplanted gap between the active area of the sensor and the guard rings (GRs). Carriers can be collected by floating electrodes, i.e., electron accumulation layers at the silicon/oxide interface, and floating GRs. The crosstalk signals generated by these events create spurious peaks, replicas of the main peaks at either lower amplitude or of opposite polarity. Lastly, we explain this phenomenon as crosstalk caused by charge collected on these floating electrodes, which can be analyzed by means of an extension of Ramo theorem.
Authors:
ORCiD logo [1] ;  [2] ;  [2] ; ORCiD logo [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States). Instrumentation Division
  2. Amptek Inc., Bedford, MA (United States)
Publication Date:
Report Number(s):
BNL-200029-2018-JAAM
Journal ID: ISSN 0018-9499
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 64; Journal Issue: 11; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Ramo theorem; signal formation; silicon radiation
OSTI Identifier:
1424951