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Title: Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

Abstract

Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorous concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.

Authors:
 [1];  [2];  [2];  [2];  [2];  [3]
  1. Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Colorado School of Mines, Golden, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1424582
Alternate Identifier(s):
OSTI ID: 1548764
Report Number(s):
NREL/JA-5J00-71046
Journal ID: ISSN 0040-6090
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Volume: 649; Journal Issue: C; Journal ID: ISSN 0040-6090
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; flexible electronics; thin film; substrate reuse; germanium; fracture; spalling; layer transfer; exfoliation

Citation Formats

Crouse, Dustin, Simon, John, Schulte, Kevin L., Young, David L., Ptak, Aaron J., and Packard, Corinne E. Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating. United States: N. p., 2018. Web. https://doi.org/10.1016/j.tsf.2018.01.031.
Crouse, Dustin, Simon, John, Schulte, Kevin L., Young, David L., Ptak, Aaron J., & Packard, Corinne E. Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating. United States. https://doi.org/10.1016/j.tsf.2018.01.031
Crouse, Dustin, Simon, John, Schulte, Kevin L., Young, David L., Ptak, Aaron J., and Packard, Corinne E. Wed . "Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating". United States. https://doi.org/10.1016/j.tsf.2018.01.031. https://www.osti.gov/servlets/purl/1424582.
@article{osti_1424582,
title = {Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating},
author = {Crouse, Dustin and Simon, John and Schulte, Kevin L. and Young, David L. and Ptak, Aaron J. and Packard, Corinne E.},
abstractNote = {Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorous concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.},
doi = {10.1016/j.tsf.2018.01.031},
journal = {Thin Solid Films},
number = C,
volume = 649,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:

Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

Figures / Tables:

Table 1 Table 1: Measured Ni film thicknesses and Ge spall depth for controllably spalled samples for different electrolyte chemistries

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Works referenced in this record:

Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells
journal, May 2016

  • Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey
  • Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 9
  • DOI: 10.1002/pip.2776

26.1% thin-film GaAs solar cell using epitaxial lift-off
journal, September 2009


Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies
journal, April 2012

  • Bedell, Stephen W.; Shahrjerdi, Davood; Hekmatshoar, Bahman
  • IEEE Journal of Photovoltaics, Vol. 2, Issue 2
  • DOI: 10.1109/JPHOTOV.2012.2184267

Layer transfer by controlled spalling
journal, March 2013


Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic
journal, December 2012

  • Shahrjerdi, Davood; Bedell, Stephen W.; Bayram, Can
  • Advanced Energy Materials, Vol. 3, Issue 5
  • DOI: 10.1002/aenm.201200827

Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films
journal, July 2016

  • Alharbi, Abdullah; Shahrjerdi, Davood
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 10, Issue 8
  • DOI: 10.1002/pssr.201600163

Mixed Mode Cracking in Layered Materials
book, January 1991


The cracking and decohesion of thin films
journal, October 1988

  • Evans, A. G.; Drory, M. D.; Hu, M. S.
  • Journal of Materials Research, Vol. 3, Issue 5
  • DOI: 10.1557/JMR.1988.1043

Controlled exfoliation of (100) GaAs-based devices by spalling fracture
journal, January 2016

  • Sweet, Cassi A.; Schulte, Kevin L.; Simon, John D.
  • Applied Physics Letters, Vol. 108, Issue 1
  • DOI: 10.1063/1.4939661

Effects of Process Conditions on Properties of Electroplated Ni Thin Films for Microsystem Applications
journal, January 2006

  • Luo, J. K.; Pritschow, M.; Flewitt, A. J.
  • Journal of The Electrochemical Society, Vol. 153, Issue 10
  • DOI: 10.1149/1.2223302

An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments
journal, June 1992

  • Oliver, W. C.; Pharr, G. M.
  • Journal of Materials Research, Vol. 7, Issue 06, p. 1564-1583
  • DOI: 10.1557/JMR.1992.1564

Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers
journal, January 2009


Tailoring and patterning the grain size of nanocrystalline alloys
journal, January 2007


Structural transitions in electroplated Ni-P alloys
journal, July 1989

  • McMahon, G.; Erb, U.
  • Journal of Materials Science Letters, Vol. 8, Issue 7
  • DOI: 10.1007/BF01730163

Electrochemical nickel–phosphorus alloy formation
journal, October 2003


Dislocation strengthening in FCC metals and in BCC metals at high temperatures
journal, March 2017


Anisotropy effects on the reliability of single-crystal silicon
journal, November 2010


Sub-5  μ m-thick spalled single crystal Si foils by decoupling crack initiation and propagation
journal, September 2016

  • Lee, Yong Hwan; Kim, Yong-Jae; Han, Seung Min Jane
  • Applied Physics Letters, Vol. 109, Issue 13
  • DOI: 10.1063/1.4963292

Fracture toughness of germanium determined with the Vickers indentation technique
journal, August 1988

  • Lemaitre, P.
  • Journal of Materials Science Letters, Vol. 7, Issue 8
  • DOI: 10.1007/BF00723798

    Works referencing / citing this record:

      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.