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Title: Directly modulated 13 μm quantum dot lasers epitaxially grown on silicon

Authors:
; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
AR0000672
Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Name: Optics Express Journal Volume: 26 Journal Issue: 6; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1424541

Inoue, Daisuke, Jung, Daehwan, Norman, Justin, Wan, Yating, Nishiyama, Nobuhiko, Arai, Shigehisa, Gossard, Arthur C., and Bowers, John E.. Directly modulated 13 μm quantum dot lasers epitaxially grown on silicon. United States: N. p., Web. doi:10.1364/OE.26.007022.
Inoue, Daisuke, Jung, Daehwan, Norman, Justin, Wan, Yating, Nishiyama, Nobuhiko, Arai, Shigehisa, Gossard, Arthur C., & Bowers, John E.. Directly modulated 13 μm quantum dot lasers epitaxially grown on silicon. United States. doi:10.1364/OE.26.007022.
Inoue, Daisuke, Jung, Daehwan, Norman, Justin, Wan, Yating, Nishiyama, Nobuhiko, Arai, Shigehisa, Gossard, Arthur C., and Bowers, John E.. 2018. "Directly modulated 13 μm quantum dot lasers epitaxially grown on silicon". United States. doi:10.1364/OE.26.007022.
@article{osti_1424541,
title = {Directly modulated 13 μm quantum dot lasers epitaxially grown on silicon},
author = {Inoue, Daisuke and Jung, Daehwan and Norman, Justin and Wan, Yating and Nishiyama, Nobuhiko and Arai, Shigehisa and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1364/OE.26.007022},
journal = {Optics Express},
number = 6,
volume = 26,
place = {United States},
year = {2018},
month = {3}
}