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This content will become publicly available on March 6, 2019

Title: Ultrahigh thermal conductivity of isotopically enriched silicon

Authors:
ORCiD logo [1] ;  [1] ; ORCiD logo [2] ;  [2] ;  [3] ; ORCiD logo [3] ;  [4] ;  [5]
  1. National Research Center Kurchatov Institute, Moscow 123182, Russia
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720, USA
  3. Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
  4. VITCON Projectconsult GmbH, 07745 Jena, Germany
  5. Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 9; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1423925

Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, III, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, and Becker, Peter. Ultrahigh thermal conductivity of isotopically enriched silicon. United States: N. p., Web. doi:10.1063/1.5017778.
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, III, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, & Becker, Peter. Ultrahigh thermal conductivity of isotopically enriched silicon. United States. doi:10.1063/1.5017778.
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, III, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, and Becker, Peter. 2018. "Ultrahigh thermal conductivity of isotopically enriched silicon". United States. doi:10.1063/1.5017778.
@article{osti_1423925,
title = {Ultrahigh thermal conductivity of isotopically enriched silicon},
author = {Inyushkin, Alexander V. and Taldenkov, Alexander N. and Ager, III, Joel W. and Haller, Eugene E. and Riemann, Helge and Abrosimov, Nikolay V. and Pohl, Hans-Joachim and Becker, Peter},
abstractNote = {},
doi = {10.1063/1.5017778},
journal = {Journal of Applied Physics},
number = 9,
volume = 123,
place = {United States},
year = {2018},
month = {3}
}

Works referenced in this record:

Thermal conductivity of isotopically enriched 28Si: revisited
journal, August 2004
  • Kremer, R. K.; Graf, K.; Cardona, M.
  • Solid State Communications, Vol. 131, Issue 8, p. 499-503
  • DOI: 10.1016/j.ssc.2004.06.022