Ultrahigh thermal conductivity of isotopically enriched silicon
Abstract
Most of the stable elements possess two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably robust isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ(T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm-1K-1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart natSi with the natural isotopic constitution. For highly enriched crystal 28Si and crystal natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately atmore »
- Authors:
-
- National Research Centre (NRC), Moscow (Russian Federation). Kurchatov Inst. (NRCKI)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
- Leibniz-Institut für Kristallzüchtung, Berlin (Germany)
- VITCON Projectconsult GmbH, Jena (Germany)
- Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Russian Foundation for Basic Research; USDOE
- OSTI Identifier:
- 1530344
- Alternate Identifier(s):
- OSTI ID: 1423925
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 123; Journal Issue: 9; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, and Becker, Peter. Ultrahigh thermal conductivity of isotopically enriched silicon. United States: N. p., 2018.
Web. doi:10.1063/1.5017778.
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, & Becker, Peter. Ultrahigh thermal conductivity of isotopically enriched silicon. United States. https://doi.org/10.1063/1.5017778
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, and Becker, Peter. Tue .
"Ultrahigh thermal conductivity of isotopically enriched silicon". United States. https://doi.org/10.1063/1.5017778. https://www.osti.gov/servlets/purl/1530344.
@article{osti_1530344,
title = {Ultrahigh thermal conductivity of isotopically enriched silicon},
author = {Inyushkin, Alexander V. and Taldenkov, Alexander N. and Ager, Joel W. and Haller, Eugene E. and Riemann, Helge and Abrosimov, Nikolay V. and Pohl, Hans-Joachim and Becker, Peter},
abstractNote = {Most of the stable elements possess two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably robust isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ(T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm-1K-1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart natSi with the natural isotopic constitution. For highly enriched crystal 28Si and crystal natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (~80 K). The κ(T) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.},
doi = {10.1063/1.5017778},
journal = {Journal of Applied Physics},
number = 9,
volume = 123,
place = {United States},
year = {Tue Mar 06 00:00:00 EST 2018},
month = {Tue Mar 06 00:00:00 EST 2018}
}
Web of Science
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Works referencing / citing this record:
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