Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals
Abstract
Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that dopedmore »
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
- Univ. of Minnesota, Minneapolis, MN (United States). Department of Mechanical Engineering
- (United States). Department of Chemistry
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1423584
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 17; Journal Issue: 10; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; silicon photonics; doping; infrared; optical switching; plasmonics
Citation Formats
Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., Schaller, Richard D., and Northwestern Univ., Evanston, IL. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals. United States: N. p., 2017.
Web. doi:10.1021/acs.nanolett.7b03393.
Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., Schaller, Richard D., & Northwestern Univ., Evanston, IL. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals. United States. https://doi.org/10.1021/acs.nanolett.7b03393
Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., Schaller, Richard D., and Northwestern Univ., Evanston, IL. Mon .
"Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals". United States. https://doi.org/10.1021/acs.nanolett.7b03393. https://www.osti.gov/servlets/purl/1423584.
@article{osti_1423584,
title = {Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals},
author = {Diroll, Benjamin T. and Schramke, Katelyn S. and Guo, Peijun and Kortshagen, Uwe R. and Schaller, Richard D. and Northwestern Univ., Evanston, IL},
abstractNote = {Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.},
doi = {10.1021/acs.nanolett.7b03393},
journal = {Nano Letters},
number = 10,
volume = 17,
place = {United States},
year = {Mon Sep 11 00:00:00 EDT 2017},
month = {Mon Sep 11 00:00:00 EDT 2017}
}
Web of Science
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