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Title: Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect not achievable in heteroepitaxy on rigid substrates.
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  1. Univ. of Wisconsin-Madison, Madison, WI (United States). Dept. of Materials Science and Engineering
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Publication Date:
Grant/Contract Number:
FG02-04ER46147; DMR-1121288; DMR-1720415; DGE-1256259; AC02-06CH11357
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Univ. of Wisconsin-Madison, Madison, WI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; elastic strain sharing; x-ray nanobeam diffraction; complex oxide materials; functional electronic and magnetic properties; Semiconductor device fabrication; Chemical compounds; Epitaxy; Dielectric materials; Electron diffraction
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1423384