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Title: Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

Abstract

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect not achievable in heteroepitaxy on rigid substrates.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [2]; ORCiD logo [1]
  1. Univ. of Wisconsin-Madison, Madison, WI (United States). Dept. of Materials Science and Engineering
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Publication Date:
Research Org.:
Univ. of Wisconsin-Madison, Madison, WI (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1423428
Alternate Identifier(s):
OSTI ID: 1423384; OSTI ID: 1466367
Grant/Contract Number:  
FG02-04ER46147; DMR-1121288; DMR-1720415; DGE-1256259; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; elastic strain sharing; x-ray nanobeam diffraction; complex oxide materials; functional electronic and magnetic properties; Semiconductor device fabrication; Chemical compounds; Epitaxy; Dielectric materials; Electron diffraction

Citation Formats

Tilka, J. A., Park, J., Ahn, Y., Pateras, A., Cai, Z., and Evans, P. G. Stressor-layer-induced elastic strain sharing in SrTiO3 complex oxide sheets. United States: N. p., 2018. Web. doi:10.1063/1.5019920.
Tilka, J. A., Park, J., Ahn, Y., Pateras, A., Cai, Z., & Evans, P. G. Stressor-layer-induced elastic strain sharing in SrTiO3 complex oxide sheets. United States. doi:10.1063/1.5019920.
Tilka, J. A., Park, J., Ahn, Y., Pateras, A., Cai, Z., and Evans, P. G. Mon . "Stressor-layer-induced elastic strain sharing in SrTiO3 complex oxide sheets". United States. doi:10.1063/1.5019920. https://www.osti.gov/servlets/purl/1423428.
@article{osti_1423428,
title = {Stressor-layer-induced elastic strain sharing in SrTiO3 complex oxide sheets},
author = {Tilka, J. A. and Park, J. and Ahn, Y. and Pateras, A. and Cai, Z. and Evans, P. G.},
abstractNote = {A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO3 sheets is on the order of 10-4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect not achievable in heteroepitaxy on rigid substrates.},
doi = {10.1063/1.5019920},
journal = {Applied Physics Letters},
number = 9,
volume = 112,
place = {United States},
year = {2018},
month = {2}
}

Journal Article:
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Cited by: 1 work
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Figures / Tables:

Figure 1 Figure 1: (a) Schematic of the STO sheet with SiN stressor layers. Scanning election microscopy images of a 510-nm-thick STO sheet (b) without (c-d) with a 270-nm-thick SiN layer deposited on the face. The large face of the sheet has area 10 × 10 μm2.

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